Method of forming a through-silicon via utilizing a metal contact pad in a back-end-of-line wiring level to fill the through-silicon via | Patent Publication Number 20140342552

US 20140342552 A1
Patent NumberUS 08951906 B2
Application Number14446634
Filled DateJul 30, 2014
Priority DateJun 7, 2011
Publication DateNov 20, 2014
Original AssigneeInternational Business Machines
Current AssigneeGlobalfoundries
Inventor/ApplicantsMukta G. Farooq
Troy L. Graves-Abe
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