Semiconductor device having diode devices with different barrier heights and manufacturing method thereof | Patent Publication Number 20200286987

US 20200286987 A1
Patent NumberUS 10985240 B2
Application Number15930390
Filled DateMay 12, 2020
Priority DateOct 25, 2017
Publication DateSep 10, 2020
Original AssigneeTaiwan Semiconductor Manufacturing Company
Current AssigneeTaiwan Semiconductor Manufacturing Company
Inventor/ApplicantsWEN-SHUN LO
FELIX YING-KIT TSUI
Felix Ying-Kit Tsui
Yu-Chi Chang
YU-CHI CHANG
Wen-Shun Lo
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