Gate electrode having a capping layer | Patent Publication Number 20200295153
US 20200295153 A1Patent NumberUS 11031482 B2
Application Number16889680
Filled DateJun 1, 2020
Priority DateDec 30, 2005
Publication DateSep 17, 2020
Original AssigneeIntel Corporation
Current AssigneeIntel Corporation
Inventor/ApplicantsJustin K. Brask
Gilbert Dewey
Mark L. Doczy
Gilbert DEWEY
Justin K. BRASK
Suman Datta
Matthew V. Metz
Suman DATTA
Matthew V. METZ
Mark L. DOCZY
Gilbert Dewey
Mark L. Doczy
Gilbert DEWEY
Justin K. BRASK
Suman Datta
Matthew V. Metz
Suman DATTA
Matthew V. METZ
Mark L. DOCZY
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