Method for forming semiconductor device structure with gate electrode layer | Patent Publication Number 20210183707
US 20210183707 A1Patent NumberUS 11133221 B2
Application Number16904024
Filled DateJun 17, 2020
Priority DateDec 17, 2019
Publication DateJun 17, 2021
Original AssigneeTaiwan Semiconductor Manufacturing Company
Current AssigneeTaiwan Semiconductor Manufacturing Company
Inventor/ApplicantsSai-Hooi Yeong
Jin-Aun NG
Sai-Hooi YEONG
Jin-Aun Ng
Jin-Aun NG
Sai-Hooi YEONG
Jin-Aun Ng
Empower your practice with Patexia Publication Prosecution IP Module.
Get access to our exclusive rankings and unlock powerful data.
Looking for a Publication Attorney?
Get in touch with our team or create your account to start exploring a
network of over 120K attorneys.