Method for forming semiconductor device that includes covering metal gate with multilayer dielectric | Patent Publication Number 20210327760

US 20210327760 A1
Patent NumberUS 11164789 B1
Application Number16852191
Filled DateApr 17, 2020
Priority DateApr 17, 2020
Publication DateOct 21, 2021
Original AssigneeTaiwan Semiconductor Manufacturing Company
Current AssigneeTaiwan Semiconductor Manufacturing Company
Inventor/ApplicantsYu-Shih Wang
Tze-Liang LEE
Tze-Liang Lee
Tsai-Jung HO
Yu-Shih WANG
Tsai-Jung Ho
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