Semiconductor device with source/drain epitaxial layer | Patent Publication Number 20220359275

US 20220359275 A1
Patent NumberUS 11996323 B2
Application Number17874310
Filled DateJul 27, 2022
Priority DateSep 27, 2019
Publication DateNov 10, 2022
Original AssigneeTaiwan Semiconductor Manufacturing Company
Current AssigneeTaiwan Semiconductor Manufacturing Company
Inventor/ApplicantsChia-Chung Chen
Victor Chiang Liang
Chung-Hao Chu
Ching-Yu Yang
Chi-Feng Huang
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