FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME | Patent Publication Number 20230369334

US 20230369334 A1
Patent Number-
Application Number18357792
Filled DateJul 24, 2023
Priority DateMay 22, 2020
Publication DateNov 16, 2023
Original AssigneeTaiwan Semiconductor Manufacturing Company
Current AssigneeTaiwan Semiconductor Manufacturing Company
Inventor/ApplicantsKuo-Chin Liu
Tsu Hao Wang
Chun-Hung Lee
Chao-Cheng Chen
Duen-Huei Hou
Hsin-Chih Chen
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