READ RETRY METHOD FOR ENHANCING READ PERFORMANCE AND STABILITY OF 3D NAND MEMORY | Patent Publication Number 20240061606
US 20240061606 A1Publication DateFeb 22, 2024
Original AssigneeYangtze Memory Technologies Co. Ltd.
Current AssigneeYangtze Memory Technologies Co. Ltd.
Inventor/ApplicantsLu GUO
Zhongchen HUO
Guangchang YE
Zhongchen HUO
Guangchang YE
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