
Abdulfattah B. Mustapha
Examiner (ID: 5532)
| Most Active Art Unit | 2812 |
| Art Unit(s) | 2812, 2809 |
| Total Applications | 635 |
| Issued Applications | 534 |
| Pending Applications | 2 |
| Abandoned Applications | 97 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 4852670
[patent_doc_number] => 20080318413
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2008-12-25
[patent_title] => 'METHOD FOR MAKING AN INTERCONNECT STRUCTURE AND INTERCONNECT COMPONENT RECOVERY PROCESS'
[patent_app_type] => utility
[patent_app_number] => 11/766302
[patent_app_country] => US
[patent_app_date] => 2007-06-21
[patent_effective_date] => 0000-00-00
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[patent_figures_cnt] => 14
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[patent_current_assignee] =>[type] => publication
[pdf_file] => publications/A1/0318/20080318413.pdf
[firstpage_image] =>[orig_patent_app_number] => 11766302
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/766302 | METHOD FOR MAKING AN INTERCONNECT STRUCTURE AND INTERCONNECT COMPONENT RECOVERY PROCESS | Jun 20, 2007 | Abandoned |
Array
(
[id] => 4852633
[patent_doc_number] => 20080318376
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2008-12-25
[patent_title] => 'Semiconductor Device Manufactured Using a Method to Improve Gate Doping While Maintaining Good Gate Profile'
[patent_app_type] => utility
[patent_app_number] => 11/766191
[patent_app_country] => US
[patent_app_date] => 2007-06-21
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/766191 | Semiconductor device manufactured using a method to improve gate doping while maintaining good gate profile | Jun 20, 2007 | Issued |
Array
(
[id] => 151693
[patent_doc_number] => 07678667
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[patent_kind] => B2
[patent_issue_date] => 2010-03-16
[patent_title] => 'Method of bonding MEMS integrated circuits'
[patent_app_type] => utility
[patent_app_number] => 11/766052
[patent_app_country] => US
[patent_app_date] => 2007-06-20
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/766052 | Method of bonding MEMS integrated circuits | Jun 19, 2007 | Issued |
Array
(
[id] => 10863811
[patent_doc_number] => 08889507
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2014-11-18
[patent_title] => 'MIM capacitors with improved reliability'
[patent_app_type] => utility
[patent_app_number] => 11/765971
[patent_app_country] => US
[patent_app_date] => 2007-06-20
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/765971 | MIM capacitors with improved reliability | Jun 19, 2007 | Issued |
Array
(
[id] => 8017101
[patent_doc_number] => 08138053
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2012-03-20
[patent_title] => 'Method of forming source and drain of field-effect-transistor and structure thereof'
[patent_app_type] => utility
[patent_app_number] => 11/763561
[patent_app_country] => US
[patent_app_date] => 2007-06-15
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[pdf_file] => patents/08/138/08138053.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/763561 | Method of forming source and drain of field-effect-transistor and structure thereof | Jun 14, 2007 | Issued |
Array
(
[id] => 4759484
[patent_doc_number] => 20080311710
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[patent_kind] => A1
[patent_issue_date] => 2008-12-18
[patent_title] => 'METHOD TO FORM LOW-DEFECT POLYCRYSTALLINE SEMICONDUCTOR MATERIAL FOR USE IN A TRANSISTOR'
[patent_app_type] => utility
[patent_app_number] => 11/763671
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[firstpage_image] =>[orig_patent_app_number] => 11763671
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/763671 | Method to form low-defect polycrystalline semiconductor material for use in a transistor | Jun 14, 2007 | Issued |
Array
(
[id] => 4583040
[patent_doc_number] => 07851343
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[patent_issue_date] => 2010-12-14
[patent_title] => 'Methods of forming ohmic layers through ablation capping layers'
[patent_app_type] => utility
[patent_app_number] => 11/763081
[patent_app_country] => US
[patent_app_date] => 2007-06-14
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 11763081
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/763081 | Methods of forming ohmic layers through ablation capping layers | Jun 13, 2007 | Issued |
Array
(
[id] => 112389
[patent_doc_number] => 07713852
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2010-05-11
[patent_title] => 'Methods for forming field effect transistors and EPI-substrate'
[patent_app_type] => utility
[patent_app_number] => 11/761751
[patent_app_country] => US
[patent_app_date] => 2007-06-12
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/761751 | Methods for forming field effect transistors and EPI-substrate | Jun 11, 2007 | Issued |
Array
(
[id] => 4752672
[patent_doc_number] => 20080160747
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2008-07-03
[patent_title] => 'METHOD OF FORMING A GATE OF A SEMICONDUCTOR DEVICE'
[patent_app_type] => utility
[patent_app_number] => 11/761281
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[patent_app_date] => 2007-06-11
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[firstpage_image] =>[orig_patent_app_number] => 11761281
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/761281 | Method of forming a gate of a semiconductor device | Jun 10, 2007 | Issued |
Array
(
[id] => 7518870
[patent_doc_number] => 07972971
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2011-07-05
[patent_title] => 'Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium'
[patent_app_type] => utility
[patent_app_number] => 11/761122
[patent_app_country] => US
[patent_app_date] => 2007-06-11
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 11761122
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/761122 | Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium | Jun 10, 2007 | Issued |
Array
(
[id] => 53072
[patent_doc_number] => 07772128
[patent_country] => US
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[patent_issue_date] => 2010-08-10
[patent_title] => 'Semiconductor system with surface modification'
[patent_app_type] => utility
[patent_app_number] => 11/760722
[patent_app_country] => US
[patent_app_date] => 2007-06-08
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[firstpage_image] =>[orig_patent_app_number] => 11760722
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/760722 | Semiconductor system with surface modification | Jun 7, 2007 | Issued |
Array
(
[id] => 71449
[patent_doc_number] => 07754510
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[patent_issue_date] => 2010-07-13
[patent_title] => 'Phase-separated dielectric structure fabrication process'
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[firstpage_image] =>[orig_patent_app_number] => 11695131
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/695131 | Phase-separated dielectric structure fabrication process | Apr 1, 2007 | Issued |
Array
(
[id] => 5010911
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[patent_title] => 'Manufacturing method of a package substrate'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/727852 | Manufacturing method of a package substrate | Mar 27, 2007 | Abandoned |
Array
(
[id] => 7692104
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[patent_title] => 'Processing method for wafer'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/728931 | Processing method for wafer | Mar 26, 2007 | Issued |
Array
(
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[patent_title] => 'GANG FLIPPING FOR IC PACKAGING'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/691431 | Gang flipping for IC packaging | Mar 25, 2007 | Issued |
Array
(
[id] => 4715281
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[patent_title] => 'SEMICONDUCTOR DEVICE HAVING STRUCTURE WITH FRACTIONAL DIMENSION OF THE MINIMUM DIMENSION OF A LITHOGRAPHY SYSTEM'
[patent_app_type] => utility
[patent_app_number] => 11/691332
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/691332 | Semiconductor device having structure with fractional dimension of the minimum dimension of a lithography system | Mar 25, 2007 | Issued |
Array
(
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[patent_title] => 'DEPOSITION OF CRYSTALLINE LAYERS ON POLYMER SUBSTRATES USING NANOPARTICLES AND LASER NANOFORMING'
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Array
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Array
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/684732 | Encapsulation in a hermetic cavity of a microelectronic composite, particularly of a MEMS | Mar 11, 2007 | Issued |
Array
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