| Application number | Title of the application | Filing Date | Status |
|---|
Array
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[patent_doc_number] => 05675161
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-10-07
[patent_title] => 'Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications'
[patent_app_type] => 1
[patent_app_number] => 8/411533
[patent_app_country] => US
[patent_app_date] => 1995-03-28
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[firstpage_image] =>[orig_patent_app_number] => 411533
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/411533 | Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications | Mar 27, 1995 | Issued |
Array
(
[id] => 3833962
[patent_doc_number] => 05760417
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-02
[patent_title] => 'Semiconductor electron emission device'
[patent_app_type] => 1
[patent_app_number] => 8/410396
[patent_app_country] => US
[patent_app_date] => 1995-03-27
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[pdf_file] => patents/05/760/05760417.pdf
[firstpage_image] =>[orig_patent_app_number] => 410396
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/410396 | Semiconductor electron emission device | Mar 26, 1995 | Issued |
Array
(
[id] => 3513781
[patent_doc_number] => 05587609
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-12-24
[patent_title] => 'II-VI group compound semiconductor device metallic nitride ohmic contact for p-type'
[patent_app_type] => 1
[patent_app_number] => 8/409307
[patent_app_country] => US
[patent_app_date] => 1995-03-23
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/587/05587609.pdf
[firstpage_image] =>[orig_patent_app_number] => 409307
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/409307 | II-VI group compound semiconductor device metallic nitride ohmic contact for p-type | Mar 22, 1995 | Issued |
Array
(
[id] => 3658365
[patent_doc_number] => 05627139
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-05-06
[patent_title] => 'High-temperature superconducting josephson devices having a barrier layer of a doped, cubic crystalline, conductive oxide material'
[patent_app_type] => 1
[patent_app_number] => 8/407043
[patent_app_country] => US
[patent_app_date] => 1995-03-17
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/627/05627139.pdf
[firstpage_image] =>[orig_patent_app_number] => 407043
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/407043 | High-temperature superconducting josephson devices having a barrier layer of a doped, cubic crystalline, conductive oxide material | Mar 16, 1995 | Issued |
Array
(
[id] => 3557571
[patent_doc_number] => 05574304
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-11-12
[patent_title] => 'Superluminescent diode with offset current injection regions'
[patent_app_type] => 1
[patent_app_number] => 8/394034
[patent_app_country] => US
[patent_app_date] => 1995-02-24
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/574/05574304.pdf
[firstpage_image] =>[orig_patent_app_number] => 394034
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/394034 | Superluminescent diode with offset current injection regions | Feb 23, 1995 | Issued |
| 08/392061 | SELF-ALIGNED METHOD FOR FORMING CONTACT WITH ZERO OFFSET TO GATE | Feb 21, 1995 | Abandoned |
| 08/391667 | SEMICONDUCTOR OPTICAL DEVICE | Feb 20, 1995 | Abandoned |
| 08/387095 | COMPOSITE BUMP STRUCTURE AND METHODS OF FABRICATION | Feb 12, 1995 | Abandoned |
| 08/386217 | JOSEPHSON JUNCTION DEVICE OF OXIDE SUPERCONDUCTOR AND PROCESS FOR PREPARING THE SAME | Feb 8, 1995 | Abandoned |
Array
(
[id] => 3732885
[patent_doc_number] => 05670803
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-09-23
[patent_title] => 'Three-dimensional SRAM trench structure and fabrication method therefor'
[patent_app_type] => 1
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[pdf_file] => patents/05/670/05670803.pdf
[firstpage_image] =>[orig_patent_app_number] => 386721
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/386721 | Three-dimensional SRAM trench structure and fabrication method therefor | Feb 7, 1995 | Issued |
Array
(
[id] => 3554355
[patent_doc_number] => 05572052
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-11-05
[patent_title] => 'Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer'
[patent_app_type] => 1
[patent_app_number] => 8/374890
[patent_app_country] => US
[patent_app_date] => 1995-01-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 12
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[pdf_file] => patents/05/572/05572052.pdf
[firstpage_image] =>[orig_patent_app_number] => 374890
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/374890 | Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer | Jan 18, 1995 | Issued |
Array
(
[id] => 3666905
[patent_doc_number] => 05625233
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-04-29
[patent_title] => 'Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide'
[patent_app_type] => 1
[patent_app_number] => 8/372633
[patent_app_country] => US
[patent_app_date] => 1995-01-13
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[pdf_file] => patents/05/625/05625233.pdf
[firstpage_image] =>[orig_patent_app_number] => 372633
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/372633 | Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide | Jan 12, 1995 | Issued |
Array
(
[id] => 3612509
[patent_doc_number] => 05589708
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-12-31
[patent_title] => 'Radiation hard integrated circuits with implanted silicon in gate oxide layer, field oxide region, and interlevel dielectric layer'
[patent_app_type] => 1
[patent_app_number] => 8/368889
[patent_app_country] => US
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[pdf_file] => patents/05/589/05589708.pdf
[firstpage_image] =>[orig_patent_app_number] => 368889
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/368889 | Radiation hard integrated circuits with implanted silicon in gate oxide layer, field oxide region, and interlevel dielectric layer | Jan 4, 1995 | Issued |
Array
(
[id] => 3652753
[patent_doc_number] => 05684315
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-11-04
[patent_title] => 'Semiconductor memory device including memory cells each having an information storage capacitor component formed over control electrode of cell selecting transistor'
[patent_app_type] => 1
[patent_app_number] => 8/362879
[patent_app_country] => US
[patent_app_date] => 1994-12-23
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[pdf_file] => patents/05/684/05684315.pdf
[firstpage_image] =>[orig_patent_app_number] => 362879
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/362879 | Semiconductor memory device including memory cells each having an information storage capacitor component formed over control electrode of cell selecting transistor | Dec 22, 1994 | Issued |
Array
(
[id] => 3592644
[patent_doc_number] => 05517044
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-05-14
[patent_title] => 'Non-volatile semiconductor memory device having thin film transistors equipped with floating gates'
[patent_app_type] => 1
[patent_app_number] => 8/359865
[patent_app_country] => US
[patent_app_date] => 1994-12-20
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/359865 | Non-volatile semiconductor memory device having thin film transistors equipped with floating gates | Dec 19, 1994 | Issued |
Array
(
[id] => 3602786
[patent_doc_number] => 05559360
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-09-24
[patent_title] => 'Inductor for high frequency circuits'
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[patent_app_number] => 8/359309
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[firstpage_image] =>[orig_patent_app_number] => 359309
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/359309 | Inductor for high frequency circuits | Dec 18, 1994 | Issued |
Array
(
[id] => 3554317
[patent_doc_number] => 05572050
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-11-05
[patent_title] => 'Fuse-triggered antifuse'
[patent_app_type] => 1
[patent_app_number] => 8/349933
[patent_app_country] => US
[patent_app_date] => 1994-12-06
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[pdf_file] => patents/05/572/05572050.pdf
[firstpage_image] =>[orig_patent_app_number] => 349933
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/349933 | Fuse-triggered antifuse | Dec 5, 1994 | Issued |
Array
(
[id] => 3570862
[patent_doc_number] => 05485025
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-01-16
[patent_title] => 'Depleted extrinsic emitter of collector-up heterojunction bipolar transistor'
[patent_app_type] => 1
[patent_app_number] => 8/349343
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[firstpage_image] =>[orig_patent_app_number] => 349343
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/349343 | Depleted extrinsic emitter of collector-up heterojunction bipolar transistor | Dec 1, 1994 | Issued |
Array
(
[id] => 3596086
[patent_doc_number] => 05521422
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-05-28
[patent_title] => 'Corner protected shallow trench isolation device'
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[patent_app_number] => 8/348709
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[pdf_file] => patents/05/521/05521422.pdf
[firstpage_image] =>[orig_patent_app_number] => 348709
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/348709 | Corner protected shallow trench isolation device | Dec 1, 1994 | Issued |
Array
(
[id] => 3857631
[patent_doc_number] => 05767560
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-16
[patent_title] => 'Photoelectric conversion device and method of driving the same'
[patent_app_type] => 1
[patent_app_number] => 8/352688
[patent_app_country] => US
[patent_app_date] => 1994-11-30
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[pdf_file] => patents/05/767/05767560.pdf
[firstpage_image] =>[orig_patent_app_number] => 352688
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/352688 | Photoelectric conversion device and method of driving the same | Nov 29, 1994 | Issued |