
Allan R. Wilson
Examiner (ID: 12196, Phone: (571)272-1738 , Office: P/2897 )
| Most Active Art Unit | 2897 |
| Art Unit(s) | 2897, 2503, 3621, 2815 |
| Total Applications | 1911 |
| Issued Applications | 1758 |
| Pending Applications | 18 |
| Abandoned Applications | 144 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 1340656
[patent_doc_number] => 06593635
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[patent_kind] => B2
[patent_issue_date] => 2003-07-15
[patent_title] => 'Light receiving semiconductor device with PIN structure'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/188372 | Light receiving semiconductor device with PIN structure | Jul 2, 2002 | Issued |
Array
(
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[patent_doc_number] => 06627945
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[patent_issue_date] => 2003-09-30
[patent_title] => 'Memory device and method of making'
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Array
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[patent_issue_date] => 2003-03-20
[patent_title] => 'Switching field effect transistor using abrupt metal-insulator transition'
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Array
(
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[patent_issue_date] => 2003-12-23
[patent_title] => 'RF LDMOS on partial SOI substrate'
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Array
(
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Array
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[patent_title] => 'Electrostatic discharge protection for integrated semiconductor devices using channel stop field plates'
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Array
(
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[patent_title] => 'MEMORY CELL WITH REDUCED COUPLING BETWEEN PASS TRANSISTOR AND DRIVE TRANSISTOR BODIES AND METHOD'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/183086 | Memory cell with reduced coupling between pass transistor and drive transistor bodies and method | Jun 25, 2002 | Issued |
Array
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[patent_title] => 'EDMOS device having a lattice type drift region'
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Array
(
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[patent_title] => 'Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling'
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Array
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[patent_title] => 'Semiconductor device with structure for die or dice crack detection'
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Array
(
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Array
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Array
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Array
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Array
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Array
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Array
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