
Allen J. Flanigan
Examiner (ID: 9389, Phone: (571)272-4910 , Office: P/3744 )
| Most Active Art Unit | |
| Art Unit(s) | |
| Total Applications | |
| Issued Applications | |
| Pending Applications | |
| Abandoned Applications |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
| 07/946784 | SEMICONDUCTOR MEMORY WHEREIN METALLIC INTERCONNECTION LAYER IS APPLIED WITH THE SAME POTENTIAL AS WORD LINE AND IS CONNECTED TO WORD LINE IN REGIONS OTHER THAN MEMORY CELLS | Sep 17, 1992 | Abandoned |
| 07/945106 | POWER TRANSISTOR DEVICE HAVING ULTRA DEEP INCREASED CONCENTRATION REGION | Sep 14, 1992 | Abandoned |
| 07/935474 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS | Aug 25, 1992 | Abandoned |
| 07/921379 | Organic electroluminescent device | Jul 29, 1992 | Issued |
| 07/921551 | HETEROJUNCTION BIPOLAR TRANSISTOR | Jul 28, 1992 | Abandoned |
| 07/917532 | ELECTRON EMITTING ELEMENT | Jul 19, 1992 | Abandoned |
| 07/906417 | MINIBAND TRANSPORT QUANTUM WELL DETECTOR | Jun 29, 1992 | Abandoned |
| 07/905182 | Indium gallium aluminum phosphide silicon doped to prevent zinc disordering | Jun 25, 1992 | Issued |
| 07/895144 | EEPROM ARRAY WITH BURIED N+ WINDOWS AND WITH SEPARATE ERASING AND PROGRAMMING REGIONS | Jun 4, 1992 | Abandoned |
| 07/884319 | Field plate avalanche diode | May 10, 1992 | Issued |
| 07/880763 | Electrically erasable memory elements characterized by reduced current and improved thermal stability | May 7, 1992 | Issued |
| 07/863471 | SEMICONDUCTOR DEVICE | Apr 1, 1992 | Abandoned |
| 07/861141 | GRADED IMPLANTATION OF OXYGEN AND/OR NITROGEN CONSTITUENTS TO DEFINE BURIED ISOLATION REGION IN SEMICONDUCTOR DEVICES | Mar 30, 1992 | Abandoned |
| 07/857727 | Semiconductor memory device having trenched capicitor | Mar 25, 1992 | Issued |
| 07/855839 | TURN-OFF, MOS-CONTROLLED, POWER SEMICONDUCTOR COMPONENT | Mar 19, 1992 | Abandoned |
| 07/841941 | METHOD FOR FORMING SOI STRUCTURE | Feb 25, 1992 | Abandoned |
| 07/837689 | Semiconductor integrated circuit device | Feb 18, 1992 | Issued |
| 07/833599 | Bipolar transistor with floating guard region under extrinsic base | Feb 9, 1992 | Issued |
| 07/832159 | Contacts to rod shaped Schottky gate fets | Feb 5, 1992 | Issued |
| 07/830365 | MOS TRANSISTOR AND ITS FABRICATING METHOD | Jan 30, 1992 | Abandoned |