
Amanda C. Abrahamson
Supervisory Patent Examiner (ID: 369, Phone: (571)270-1376 , Office: P/3688 )
| Most Active Art Unit | 3629 |
| Art Unit(s) | 3629, OPQA, 3688 |
| Total Applications | 197 |
| Issued Applications | 59 |
| Pending Applications | 5 |
| Abandoned Applications | 133 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 4283003
[patent_doc_number] => 06281589
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-08-28
[patent_title] => 'System of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides'
[patent_app_type] => 1
[patent_app_number] => 9/270901
[patent_app_country] => US
[patent_app_date] => 1999-03-15
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 8
[patent_no_of_words] => 5730
[patent_no_of_claims] => 11
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 156
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/281/06281589.pdf
[firstpage_image] =>[orig_patent_app_number] => 270901
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/270901 | System of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides | Mar 14, 1999 | Issued |
Array
(
[id] => 1463609
[patent_doc_number] => 06350993
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-02-26
[patent_title] => 'High speed composite p-channel Si/SiGe heterostructure for field effect devices'
[patent_app_type] => B1
[patent_app_number] => 09/267323
[patent_app_country] => US
[patent_app_date] => 1999-03-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 13
[patent_figures_cnt] => 15
[patent_no_of_words] => 7482
[patent_no_of_claims] => 41
[patent_no_of_ind_claims] => 4
[patent_words_short_claim] => 153
[patent_maintenance] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/350/06350993.pdf
[firstpage_image] =>[orig_patent_app_number] => 09267323
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/267323 | High speed composite p-channel Si/SiGe heterostructure for field effect devices | Mar 11, 1999 | Issued |
Array
(
[id] => 4243630
[patent_doc_number] => 06166395
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-12-26
[patent_title] => 'Amorphous silicon interconnect with multiple silicon layers'
[patent_app_type] => 1
[patent_app_number] => 9/260183
[patent_app_country] => US
[patent_app_date] => 1999-03-01
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/166/06166395.pdf
[firstpage_image] =>[orig_patent_app_number] => 260183
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/260183 | Amorphous silicon interconnect with multiple silicon layers | Feb 28, 1999 | Issued |
Array
(
[id] => 4387215
[patent_doc_number] => 06294807
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-09-25
[patent_title] => 'Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers'
[patent_app_type] => 1
[patent_app_number] => 9/259001
[patent_app_country] => US
[patent_app_date] => 1999-02-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[patent_no_of_words] => 2575
[patent_no_of_claims] => 5
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[pdf_file] => patents/06/294/06294807.pdf
[firstpage_image] =>[orig_patent_app_number] => 259001
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/259001 | Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers | Feb 25, 1999 | Issued |
Array
(
[id] => 4090751
[patent_doc_number] => 06025628
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-02-15
[patent_title] => 'High breakdown voltage twin well device with source/drain regions widely spaced from fox regions'
[patent_app_type] => 1
[patent_app_number] => 9/253291
[patent_app_country] => US
[patent_app_date] => 1999-02-19
[patent_effective_date] => 0000-00-00
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[patent_no_of_words] => 3890
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[pdf_file] => patents/06/025/06025628.pdf
[firstpage_image] =>[orig_patent_app_number] => 253291
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/253291 | High breakdown voltage twin well device with source/drain regions widely spaced from fox regions | Feb 18, 1999 | Issued |
Array
(
[id] => 4101728
[patent_doc_number] => 06097070
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-08-01
[patent_title] => 'MOSFET structure and process for low gate induced drain leakage (GILD)'
[patent_app_type] => 1
[patent_app_number] => 9/250881
[patent_app_country] => US
[patent_app_date] => 1999-02-16
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/097/06097070.pdf
[firstpage_image] =>[orig_patent_app_number] => 250881
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/250881 | MOSFET structure and process for low gate induced drain leakage (GILD) | Feb 15, 1999 | Issued |
Array
(
[id] => 4137421
[patent_doc_number] => 06147372
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-11-14
[patent_title] => 'Layout of an image sensor for increasing photon induced current'
[patent_app_type] => 1
[patent_app_number] => 9/246293
[patent_app_country] => US
[patent_app_date] => 1999-02-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
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[patent_no_of_words] => 2592
[patent_no_of_claims] => 21
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[pdf_file] => patents/06/147/06147372.pdf
[firstpage_image] =>[orig_patent_app_number] => 246293
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/246293 | Layout of an image sensor for increasing photon induced current | Feb 7, 1999 | Issued |
Array
(
[id] => 4282065
[patent_doc_number] => 06281522
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-08-28
[patent_title] => 'Method of manufacturing a semiconductor and a semiconductor light-emitting device'
[patent_app_type] => 1
[patent_app_number] => 9/243462
[patent_app_country] => US
[patent_app_date] => 1999-02-03
[patent_effective_date] => 0000-00-00
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[patent_no_of_words] => 8059
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[pdf_file] => patents/06/281/06281522.pdf
[firstpage_image] =>[orig_patent_app_number] => 243462
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/243462 | Method of manufacturing a semiconductor and a semiconductor light-emitting device | Feb 2, 1999 | Issued |
Array
(
[id] => 4414258
[patent_doc_number] => 06229185
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-05-08
[patent_title] => 'CMOS integrated circuit for lessening latch-up susceptibility'
[patent_app_type] => 1
[patent_app_number] => 9/241493
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[patent_app_date] => 1999-02-01
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[firstpage_image] =>[orig_patent_app_number] => 241493
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/241493 | CMOS integrated circuit for lessening latch-up susceptibility | Jan 31, 1999 | Issued |
Array
(
[id] => 4414376
[patent_doc_number] => 06265771
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-07-24
[patent_title] => 'Dual chip with heat sink'
[patent_app_type] => 1
[patent_app_number] => 9/238492
[patent_app_country] => US
[patent_app_date] => 1999-01-27
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[pdf_file] => patents/06/265/06265771.pdf
[firstpage_image] =>[orig_patent_app_number] => 238492
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/238492 | Dual chip with heat sink | Jan 26, 1999 | Issued |
Array
(
[id] => 4257409
[patent_doc_number] => 06207999
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-03-27
[patent_title] => 'Double coding mask read only memory (mask ROM) for minimizing band-to-band leakage'
[patent_app_type] => 1
[patent_app_number] => 9/238381
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[pdf_file] => patents/06/207/06207999.pdf
[firstpage_image] =>[orig_patent_app_number] => 238381
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/238381 | Double coding mask read only memory (mask ROM) for minimizing band-to-band leakage | Jan 26, 1999 | Issued |
Array
(
[id] => 4190635
[patent_doc_number] => 06160300
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-12-12
[patent_title] => 'Multi-layer gate conductor having a diffusion barrier in the bottom layer'
[patent_app_type] => 1
[patent_app_number] => 9/238081
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Array
(
[id] => 4363302
[patent_doc_number] => 06169292
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-01-02
[patent_title] => 'Thin film type monolithic semiconductor device'
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[firstpage_image] =>[orig_patent_app_number] => 233481
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/233481 | Thin film type monolithic semiconductor device | Jan 19, 1999 | Issued |
Array
(
[id] => 4243691
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[patent_issue_date] => 2000-12-26
[patent_title] => 'Active matrix device including thin film transistors'
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[patent_app_number] => 9/233143
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[pdf_file] => patents/06/166/06166399.pdf
[firstpage_image] =>[orig_patent_app_number] => 233143
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/233143 | Active matrix device including thin film transistors | Jan 18, 1999 | Issued |
Array
(
[id] => 4412803
[patent_doc_number] => 06239464
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[patent_issue_date] => 2001-05-29
[patent_title] => 'Semiconductor gate trench with covered open ends'
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[pdf_file] => patents/06/239/06239464.pdf
[firstpage_image] =>[orig_patent_app_number] => 226720
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/226720 | Semiconductor gate trench with covered open ends | Jan 6, 1999 | Issued |
Array
(
[id] => 4385491
[patent_doc_number] => 06303962
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[patent_kind] => NA
[patent_issue_date] => 2001-10-16
[patent_title] => 'Dielectrically-isolated transistor with low-resistance metal source and drain formed using sacrificial source and drain structures'
[patent_app_type] => 1
[patent_app_number] => 9/227512
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[pdf_file] => patents/06/303/06303962.pdf
[firstpage_image] =>[orig_patent_app_number] => 227512
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/227512 | Dielectrically-isolated transistor with low-resistance metal source and drain formed using sacrificial source and drain structures | Jan 5, 1999 | Issued |
Array
(
[id] => 6221860
[patent_doc_number] => 20020003254
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-01-10
[patent_title] => 'NVRAM CELL WITH PLANAR CONTROL GATE'
[patent_app_type] => new
[patent_app_number] => 09/225182
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[pdf_file] => publications/A1/0003/20020003254.pdf
[firstpage_image] =>[orig_patent_app_number] => 09225182
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/225182 | NVRAM CELL WITH PLANAR CONTROL GATE | Jan 3, 1999 | Abandoned |
Array
(
[id] => 4137381
[patent_doc_number] => 06147369
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[patent_kind] => NA
[patent_issue_date] => 2000-11-14
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[firstpage_image] =>[orig_patent_app_number] => 223652
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/223652 | SCR and current divider structure of electrostatic discharge protective circuit | Dec 29, 1998 | Issued |
Array
(
[id] => 1471643
[patent_doc_number] => 06407441
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[patent_issue_date] => 2002-06-18
[patent_title] => 'Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applications'
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[firstpage_image] =>[orig_patent_app_number] => 09215700
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/215700 | Integrated circuit and method of using porous silicon to achieve component isolation in radio frequency applications | Dec 17, 1998 | Issued |
Array
(
[id] => 4089415
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[pdf_file] => patents/06/163/06163045.pdf
[firstpage_image] =>[orig_patent_app_number] => 215011
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/215011 | Reduced parasitic leakage in semiconductor devices | Dec 16, 1998 | Issued |