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Anthony Bartis

Examiner (ID: 7244)

Most Active Art Unit
2106
Art Unit(s)
2103, 2106, 2305, 3404
Total Applications
791
Issued Applications
709
Pending Applications
1
Abandoned Applications
81

Applications

Application numberTitle of the applicationFiling DateStatus
08/173050 FIELD EFFECT TRANSISTOR Dec 26, 1993 Abandoned
Array ( [id] => 3463537 [patent_doc_number] => 05382815 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-01-17 [patent_title] => 'Carrier conduction conductor-insulator semiconductor (CIS) transistor' [patent_app_type] => 1 [patent_app_number] => 8/173388 [patent_app_country] => US [patent_app_date] => 1993-12-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 3 [patent_figures_cnt] => 7 [patent_no_of_words] => 1820 [patent_no_of_claims] => 20 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 107 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/382/05382815.pdf [firstpage_image] =>[orig_patent_app_number] => 173388 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/173388
Carrier conduction conductor-insulator semiconductor (CIS) transistor Dec 22, 1993 Issued
Array ( [id] => 3124159 [patent_doc_number] => 05381031 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-01-10 [patent_title] => 'Semiconductor device with reduced high voltage termination area and high breakdown voltage' [patent_app_type] => 1 [patent_app_number] => 8/172370 [patent_app_country] => US [patent_app_date] => 1993-12-22 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 3 [patent_no_of_words] => 3248 [patent_no_of_claims] => 5 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 384 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/381/05381031.pdf [firstpage_image] =>[orig_patent_app_number] => 172370 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/172370
Semiconductor device with reduced high voltage termination area and high breakdown voltage Dec 21, 1993 Issued
Array ( [id] => 3425428 [patent_doc_number] => 05389802 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-02-14 [patent_title] => 'Heterojunction field effect transistor (HJFET) having an improved frequency characteristic' [patent_app_type] => 1 [patent_app_number] => 8/170868 [patent_app_country] => US [patent_app_date] => 1993-12-21 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 6 [patent_no_of_words] => 3120 [patent_no_of_claims] => 3 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 148 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/389/05389802.pdf [firstpage_image] =>[orig_patent_app_number] => 170868 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/170868
Heterojunction field effect transistor (HJFET) having an improved frequency characteristic Dec 20, 1993 Issued
Array ( [id] => 3465831 [patent_doc_number] => 05391903 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-02-21 [patent_title] => 'Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits' [patent_app_type] => 1 [patent_app_number] => 8/171280 [patent_app_country] => US [patent_app_date] => 1993-12-21 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 5 [patent_no_of_words] => 1524 [patent_no_of_claims] => 7 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 151 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/391/05391903.pdf [firstpage_image] =>[orig_patent_app_number] => 171280 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/171280
Selective recrystallization to reduce P-channel transistor leakage in silicon-on-sapphire CMOS radiation hardened integrated circuits Dec 20, 1993 Issued
Array ( [id] => 3463687 [patent_doc_number] => 05382826 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-01-17 [patent_title] => 'Stacked high voltage transistor unit' [patent_app_type] => 1 [patent_app_number] => 8/170848 [patent_app_country] => US [patent_app_date] => 1993-12-21 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 7 [patent_figures_cnt] => 10 [patent_no_of_words] => 3529 [patent_no_of_claims] => 3 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 289 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/382/05382826.pdf [firstpage_image] =>[orig_patent_app_number] => 170848 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/170848
Stacked high voltage transistor unit Dec 20, 1993 Issued
Array ( [id] => 3487002 [patent_doc_number] => 05446306 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-08-29 [patent_title] => 'Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR)' [patent_app_type] => 1 [patent_app_number] => 8/166338 [patent_app_country] => US [patent_app_date] => 1993-12-13 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 4 [patent_no_of_words] => 1908 [patent_no_of_claims] => 22 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 148 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/446/05446306.pdf [firstpage_image] =>[orig_patent_app_number] => 166338 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/166338
Thin film voltage-tuned semiconductor bulk acoustic resonator (SBAR) Dec 12, 1993 Issued
08/165602 HIGH VOLTAGE THIN FILM TRANSISTOR HAVING A LINEAR DOPING PROFILE AND METHOD FOR MAKING Dec 8, 1993 Abandoned
08/162300 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME Dec 6, 1993 Abandoned
08/160808 METHOD FOR FABRICATING INSULATED GATE SEMICONDUCTOR DEVICE Dec 2, 1993 Abandoned
Array ( [id] => 3498476 [patent_doc_number] => 05508538 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1996-04-16 [patent_title] => 'Signal processing applications of massively parallel charge domain computing devices' [patent_app_type] => 1 [patent_app_number] => 8/161908 [patent_app_country] => US [patent_app_date] => 1993-11-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 8 [patent_figures_cnt] => 18 [patent_no_of_words] => 6413 [patent_no_of_claims] => 8 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 126 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/508/05508538.pdf [firstpage_image] =>[orig_patent_app_number] => 161908 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/161908
Signal processing applications of massively parallel charge domain computing devices Nov 29, 1993 Issued
Array ( [id] => 3110357 [patent_doc_number] => 05418393 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-05-23 [patent_title] => 'Thin-film transistor with fully gated channel region' [patent_app_type] => 1 [patent_app_number] => 8/158560 [patent_app_country] => US [patent_app_date] => 1993-11-29 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 11 [patent_no_of_words] => 4188 [patent_no_of_claims] => 19 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 144 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/418/05418393.pdf [firstpage_image] =>[orig_patent_app_number] => 158560 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/158560
Thin-film transistor with fully gated channel region Nov 28, 1993 Issued
08/158552 SEMICONDUCTOR DEVICE HAVING INCREASED CAPACITANCE AND METHOD FOR MAKING THE SAME Nov 28, 1993 Abandoned
08/151336 INCREASED DENSITY MOS-GATED SEMICONDUCTOR DEVICES Nov 11, 1993 Abandoned
Array ( [id] => 3491486 [patent_doc_number] => 05475238 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-12-12 [patent_title] => 'Thin film transistor with a sub-gate structure and a drain offset region' [patent_app_type] => 1 [patent_app_number] => 8/150537 [patent_app_country] => US [patent_app_date] => 1993-11-08 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 9 [patent_no_of_words] => 4615 [patent_no_of_claims] => 3 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 143 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/475/05475238.pdf [firstpage_image] =>[orig_patent_app_number] => 150537 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/150537
Thin film transistor with a sub-gate structure and a drain offset region Nov 7, 1993 Issued
08/145848 INSULATED-GATE BIPOLAR TRANSISTOR AND PROCESS OF PRODUCING THE SAME Nov 4, 1993 Abandoned
Array ( [id] => 3517935 [patent_doc_number] => 05512771 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1996-04-30 [patent_title] => 'MOS type semiconductor device having a low concentration impurity diffusion region' [patent_app_type] => 1 [patent_app_number] => 8/147866 [patent_app_country] => US [patent_app_date] => 1993-11-04 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 9 [patent_figures_cnt] => 40 [patent_no_of_words] => 12658 [patent_no_of_claims] => 5 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 326 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/512/05512771.pdf [firstpage_image] =>[orig_patent_app_number] => 147866 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/147866
MOS type semiconductor device having a low concentration impurity diffusion region Nov 3, 1993 Issued
Array ( [id] => 3110175 [patent_doc_number] => 05418383 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-05-23 [patent_title] => 'Semiconductor device capable of previously evaluating characteristics of power output element' [patent_app_type] => 1 [patent_app_number] => 8/143060 [patent_app_country] => US [patent_app_date] => 1993-10-29 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 3 [patent_figures_cnt] => 7 [patent_no_of_words] => 2618 [patent_no_of_claims] => 9 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 153 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/418/05418383.pdf [firstpage_image] =>[orig_patent_app_number] => 143060 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/143060
Semiconductor device capable of previously evaluating characteristics of power output element Oct 28, 1993 Issued
08/145942 STRUCTURE AND FABRICATION PROCESS OF SILICON ON INSULATOR WAFER Oct 28, 1993 Abandoned
Array ( [id] => 3413975 [patent_doc_number] => 05461243 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1995-10-24 [patent_title] => 'Substrate for tensilely strained semiconductor' [patent_app_type] => 1 [patent_app_number] => 8/145986 [patent_app_country] => US [patent_app_date] => 1993-10-29 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 2 [patent_no_of_words] => 1792 [patent_no_of_claims] => 6 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 112 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/461/05461243.pdf [firstpage_image] =>[orig_patent_app_number] => 145986 [rel_patent_id] =>[rel_patent_doc_number] =>)
08/145986
Substrate for tensilely strained semiconductor Oct 28, 1993 Issued
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