
Benjamin A. Schiffman
Examiner (ID: 12059)
| Most Active Art Unit | 1742 |
| Art Unit(s) | 1742, 1791, 4191 |
| Total Applications | 1236 |
| Issued Applications | 807 |
| Pending Applications | 77 |
| Abandoned Applications | 367 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 6081025
[patent_doc_number] => 20020081779
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-06-27
[patent_title] => 'Device comprising an electrical circuit carried by a carrier element and method for the manufacture of such a device'
[patent_app_type] => new
[patent_app_number] => 10/001920
[patent_app_country] => US
[patent_app_date] => 2001-10-31
[patent_effective_date] => 0000-00-00
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[patent_no_of_words] => 1896
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[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] => publications/A1/0081/20020081779.pdf
[firstpage_image] =>[orig_patent_app_number] => 10001920
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/001920 | Device comprising an electrical circuit carried by a carrier element and method for the manufacture of such a device | Oct 30, 2001 | Abandoned |
Array
(
[id] => 1205632
[patent_doc_number] => 06716727
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2004-04-06
[patent_title] => 'Methods and apparatus for plasma doping and ion implantation in an integrated processing system'
[patent_app_type] => B2
[patent_app_number] => 10/007530
[patent_app_country] => US
[patent_app_date] => 2001-10-26
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[pdf_file] => patents/06/716/06716727.pdf
[firstpage_image] =>[orig_patent_app_number] => 10007530
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/007530 | Methods and apparatus for plasma doping and ion implantation in an integrated processing system | Oct 25, 2001 | Issued |
Array
(
[id] => 5968536
[patent_doc_number] => 20020090796
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[patent_issue_date] => 2002-07-11
[patent_title] => 'Silicon layer to improve plug filling by CVD'
[patent_app_type] => new
[patent_app_number] => 09/981671
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/981671 | Silicon layer to improve plug filling by CVD | Oct 15, 2001 | Issued |
Array
(
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[patent_doc_number] => 06753198
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[patent_issue_date] => 2004-06-22
[patent_title] => 'Method of manufacture of active matrix substrate and liquid crystal display device'
[patent_app_type] => B2
[patent_app_number] => 09/977340
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Array
(
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Array
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Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/977340 | Method of manufacture of active matrix substrate and liquid crystal display device | Oct 15, 2001 | Issued |
Array
(
[id] => 1293252
[patent_doc_number] => 06630690
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[patent_kind] => B2
[patent_issue_date] => 2003-10-07
[patent_title] => 'Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure'
[patent_app_type] => B2
[patent_app_number] => 09/966789
[patent_app_country] => US
[patent_app_date] => 2001-09-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
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[firstpage_image] =>[orig_patent_app_number] => 09966789
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/966789 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | Sep 27, 2001 | Issued |
Array
(
[id] => 6016152
[patent_doc_number] => 20020102749
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-08-01
[patent_title] => 'Methods and systems for determining a characteristic of a layer formed on a specimen by a deposition process'
[patent_app_type] => new
[patent_app_number] => 09/956840
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/956840 | Methods and systems for determining a characteristic of a layer formed on a specimen by a deposition process | Sep 19, 2001 | Issued |
Array
(
[id] => 6016485
[patent_doc_number] => 20020102847
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[patent_issue_date] => 2002-08-01
[patent_title] => 'MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications'
[patent_app_type] => new
[patent_app_number] => 09/956540
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/956540 | MOCVD-grown InGaAsN using efficient and novel precursor, tertibutylhydrazine, for optoelectronic and electronic device applications | Sep 16, 2001 | Abandoned |
Array
(
[id] => 5906559
[patent_doc_number] => 20020142495
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[patent_issue_date] => 2002-10-03
[patent_title] => 'Method of calculating characteristics of semiconductor device having gate electrode and program thereof'
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Array
(
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[patent_title] => 'Method for growing ZnO based oxide semiconductor layer and method for manufacturing semiconductor light emitting device using the same'
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Array
(
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Array
(
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[patent_title] => 'Formation of an aluminide coating, incorporating a reactive element, on a metal substrate'
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Array
(
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[patent_title] => 'Method to fabricate a square poly spacer in flash'
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Array
(
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[patent_title] => 'Method for making projected contact structures for engaging bumped semiconductor devices'
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Array
(
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Array
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Array
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