| Application number | Title of the application | Filing Date | Status |
|---|
Array
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[patent_doc_number] => 04997784
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-03-05
[patent_title] => 'Fabrication method for a CCD frame transfer photosensitive matrix with vertical anti-blooming system'
[patent_app_type] => 1
[patent_app_number] => 7/471418
[patent_app_country] => US
[patent_app_date] => 1990-01-29
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[firstpage_image] =>[orig_patent_app_number] => 471418
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/471418 | Fabrication method for a CCD frame transfer photosensitive matrix with vertical anti-blooming system | Jan 28, 1990 | Issued |
| 07/467636 | PROFILE TAILORED TRENCH IN SEMICONDUCTOR DEVICE | Jan 18, 1990 | Abandoned |
Array
(
[id] => 2851110
[patent_doc_number] => 05089426
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-02-18
[patent_title] => 'Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation'
[patent_app_type] => 1
[patent_app_number] => 7/464567
[patent_app_country] => US
[patent_app_date] => 1990-01-16
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[firstpage_image] =>[orig_patent_app_number] => 464567
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/464567 | Method for manufacturing a semiconductor device free from electrical shortage due to pin-hole formation | Jan 15, 1990 | Issued |
| 07/465692 | PROCESS FOR TEXTURIZING MONOCRYSTALLINE SILICON USING A POLYSILICON STARTER LAYER | Jan 15, 1990 | Abandoned |
Array
(
[id] => 2766292
[patent_doc_number] => 05063170
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-11-05
[patent_title] => 'Semiconductor integrated circuit device and a method of producing the same'
[patent_app_type] => 1
[patent_app_number] => 7/460011
[patent_app_country] => US
[patent_app_date] => 1990-01-02
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/063/05063170.pdf
[firstpage_image] =>[orig_patent_app_number] => 460011
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/460011 | Semiconductor integrated circuit device and a method of producing the same | Jan 1, 1990 | Issued |
Array
(
[id] => 2816730
[patent_doc_number] => 05081069
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-01-14
[patent_title] => 'Method for depositing a Tio.sub.2 layer using a periodic and simultaneous tilting and rotating platform motion'
[patent_app_type] => 1
[patent_app_number] => 7/457113
[patent_app_country] => US
[patent_app_date] => 1989-12-26
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[pdf_file] => patents/05/081/05081069.pdf
[firstpage_image] =>[orig_patent_app_number] => 457113
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/457113 | Method for depositing a Tio.sub.2 layer using a periodic and simultaneous tilting and rotating platform motion | Dec 25, 1989 | Issued |
Array
(
[id] => 2784312
[patent_doc_number] => 05130265
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-07-14
[patent_title] => 'Process for obtaining a multifunctional, ion-selective-membrane sensor using a siloxanic prepolymer'
[patent_app_type] => 1
[patent_app_number] => 7/454512
[patent_app_country] => US
[patent_app_date] => 1989-12-21
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/130/05130265.pdf
[firstpage_image] =>[orig_patent_app_number] => 454512
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/454512 | Process for obtaining a multifunctional, ion-selective-membrane sensor using a siloxanic prepolymer | Dec 20, 1989 | Issued |
| 07/449165 | DEPOSITION METHOD FOR HIGH ASPECT RATIO FEATURES | Dec 12, 1989 | Abandoned |
Array
(
[id] => 2745198
[patent_doc_number] => 04987102
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-01-22
[patent_title] => 'Process for forming high purity thin films'
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[firstpage_image] =>[orig_patent_app_number] => 445220
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/445220 | Process for forming high purity thin films | Dec 3, 1989 | Issued |
Array
(
[id] => 2754378
[patent_doc_number] => 05043299
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-08-27
[patent_title] => 'Process for selective deposition of tungsten on semiconductor wafer'
[patent_app_type] => 1
[patent_app_number] => 7/444485
[patent_app_country] => US
[patent_app_date] => 1989-12-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[pdf_file] => patents/05/043/05043299.pdf
[firstpage_image] =>[orig_patent_app_number] => 444485
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/444485 | Process for selective deposition of tungsten on semiconductor wafer | Nov 30, 1989 | Issued |
Array
(
[id] => 2742428
[patent_doc_number] => 05023191
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-06-11
[patent_title] => 'Method of producing a semiconductor device using a single mask method for providing multiple masking patterns'
[patent_app_type] => 1
[patent_app_number] => 7/444567
[patent_app_country] => US
[patent_app_date] => 1989-12-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[pdf_file] => patents/05/023/05023191.pdf
[firstpage_image] =>[orig_patent_app_number] => 444567
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/444567 | Method of producing a semiconductor device using a single mask method for providing multiple masking patterns | Nov 30, 1989 | Issued |
Array
(
[id] => 2706096
[patent_doc_number] => 04981816
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-01-01
[patent_title] => 'MO/TI Contact to silicon'
[patent_app_type] => 1
[patent_app_number] => 7/445130
[patent_app_country] => US
[patent_app_date] => 1989-11-30
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[pdf_file] => patents/04/981/04981816.pdf
[firstpage_image] =>[orig_patent_app_number] => 445130
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/445130 | MO/TI Contact to silicon | Nov 29, 1989 | Issued |
Array
(
[id] => 2708291
[patent_doc_number] => 05017514
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-05-21
[patent_title] => 'Method of manufacturing a semiconductor device using a main vernier pattern formed at a right angle to a subsidiary vernier pattern'
[patent_app_type] => 1
[patent_app_number] => 7/441522
[patent_app_country] => US
[patent_app_date] => 1989-11-27
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 441522
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/441522 | Method of manufacturing a semiconductor device using a main vernier pattern formed at a right angle to a subsidiary vernier pattern | Nov 26, 1989 | Issued |
| 07/439608 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | Nov 20, 1989 | Abandoned |
| 07/431108 | PROCESS FOR FORMING RESIST MASK PATTERN | Nov 2, 1989 | Abandoned |
| 07/430925 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF | Nov 1, 1989 | Abandoned |
| 07/428446 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES | Oct 29, 1989 | Abandoned |
| 07/427906 | SEMICONDUCTOR ARTICLE AND PREPARATION THEREOF | Oct 23, 1989 | Abandoned |
Array
(
[id] => 2845247
[patent_doc_number] => 05106786
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-04-21
[patent_title] => 'Thin coatings for use in semiconductor integrated circuits and processes as antireflection coatings consisting of tungsten silicide'
[patent_app_type] => 1
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Array
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[patent_title] => 'Process for the formation of a silicon-containing semiconductor thin film by chemically reacting active hydrogen atoms with liquefied film-forming raw material gas on the surface of a substrate'
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