| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 2708235
[patent_doc_number] => 05017511
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-05-21
[patent_title] => 'Method for dry etching vias in integrated circuit layers'
[patent_app_type] => 1
[patent_app_number] => 7/377514
[patent_app_country] => US
[patent_app_date] => 1989-07-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[pdf_file] => patents/05/017/05017511.pdf
[firstpage_image] =>[orig_patent_app_number] => 377514
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/377514 | Method for dry etching vias in integrated circuit layers | Jul 9, 1989 | Issued |
| 07/376483 | GASEOUS CLEANING METHOD FOR SILICON DEVICES | Jul 6, 1989 | Abandoned |
Array
(
[id] => 2747572
[patent_doc_number] => 05037782
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-08-06
[patent_title] => 'Method of making a semiconductor device including via holes'
[patent_app_type] => 1
[patent_app_number] => 7/376014
[patent_app_country] => US
[patent_app_date] => 1989-07-06
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/037/05037782.pdf
[firstpage_image] =>[orig_patent_app_number] => 376014
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/376014 | Method of making a semiconductor device including via holes | Jul 5, 1989 | Issued |
| 07/374721 | TRENCH ETCHING IN AN INTEGRATED-CIRCUIT SEMICONDUCTOR DEVICE | Jul 2, 1989 | Abandoned |
Array
(
[id] => 2742678
[patent_doc_number] => 05023203
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-06-11
[patent_title] => 'Method of patterning fine line width semiconductor topology using a spacer'
[patent_app_type] => 1
[patent_app_number] => 7/370872
[patent_app_country] => US
[patent_app_date] => 1989-06-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 38
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[pdf_file] => patents/05/023/05023203.pdf
[firstpage_image] =>[orig_patent_app_number] => 370872
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/370872 | Method of patterning fine line width semiconductor topology using a spacer | Jun 22, 1989 | Issued |
| 07/369564 | METHOD OF MANUFACTURING AN OPTOELECTRONIC DEVICE | Jun 20, 1989 | Abandoned |
Array
(
[id] => 2866547
[patent_doc_number] => 05096854
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-03-17
[patent_title] => 'Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns'
[patent_app_type] => 1
[patent_app_number] => 7/367637
[patent_app_country] => US
[patent_app_date] => 1989-06-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
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[pdf_file] => patents/05/096/05096854.pdf
[firstpage_image] =>[orig_patent_app_number] => 367637
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/367637 | Method for polishing a silicon wafer using a ceramic polishing surface having a maximum surface roughness less than 0.02 microns | Jun 18, 1989 | Issued |
| 07/365730 | METHOD FOR FABRICATING INSULATING FILM | Jun 13, 1989 | Abandoned |
| 07/365870 | METHOD FOR IMPROVING DEPOSIT OF PHOTORESIST ON WAFERS | Jun 13, 1989 | Abandoned |
Array
(
[id] => 2584876
[patent_doc_number] => 04925813
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1990-05-15
[patent_title] => 'Method of manufacturing semiconductor devices including at least a reactive ion etching step'
[patent_app_type] => 1
[patent_app_number] => 7/366107
[patent_app_country] => US
[patent_app_date] => 1989-06-13
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/04/925/04925813.pdf
[firstpage_image] =>[orig_patent_app_number] => 366107
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/366107 | Method of manufacturing semiconductor devices including at least a reactive ion etching step | Jun 12, 1989 | Issued |
| 07/361900 | METALLIZATION PROCESS | Jun 4, 1989 | Abandoned |
Array
(
[id] => 2625774
[patent_doc_number] => 04920078
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1990-04-24
[patent_title] => 'Arsenic sulfide surface passivation of III-V semiconductors'
[patent_app_type] => 1
[patent_app_number] => 7/360414
[patent_app_country] => US
[patent_app_date] => 1989-06-02
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/04/920/04920078.pdf
[firstpage_image] =>[orig_patent_app_number] => 360414
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/360414 | Arsenic sulfide surface passivation of III-V semiconductors | Jun 1, 1989 | Issued |
| 07/359626 | CURING AND PASSIVATION OF SPIN ON GLASSES BY A PLASMA PROCESS, AND PRODUCT PRODUCED THEREBY | May 30, 1989 | Abandoned |
Array
(
[id] => 2698113
[patent_doc_number] => 04988644
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-01-29
[patent_title] => 'Method for etching semiconductor materials using a remote plasma generator'
[patent_app_type] => 1
[patent_app_number] => 7/355942
[patent_app_country] => US
[patent_app_date] => 1989-05-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/988/04988644.pdf
[firstpage_image] =>[orig_patent_app_number] => 355942
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/355942 | Method for etching semiconductor materials using a remote plasma generator | May 22, 1989 | Issued |
| 07/355642 | PROCESS FOR THE FORMATION OF A SILICON-CONTAINING SEMICONDUCTOR THIN FILM BY CHEMICALLY REACTING ACTIVE HYDROGEN ATOMS WITH LIQUEFIED FILM- FORMING RAW MATERIAL GAS ON THE SURFACE OF A SUBSTRATE | May 22, 1989 | Abandoned |
Array
(
[id] => 2624160
[patent_doc_number] => 04950616
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1990-08-21
[patent_title] => 'Method for fabricating a BiCMOS device'
[patent_app_type] => 1
[patent_app_number] => 7/353105
[patent_app_country] => US
[patent_app_date] => 1989-05-17
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/04/950/04950616.pdf
[firstpage_image] =>[orig_patent_app_number] => 353105
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/353105 | Method for fabricating a BiCMOS device | May 16, 1989 | Issued |
| 07/348527 | METHOD FOR COOLING SEMICONDUCTOR WAFERS USING A PORTION OF THE FLUORINATED HYDROCARBON COMPONENT OF THE PROCESS GAS | May 7, 1989 | Abandoned |
Array
(
[id] => 2743298
[patent_doc_number] => 05011794
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-04-30
[patent_title] => 'Procedure for rapid thermal annealing of implanted semiconductors'
[patent_app_type] => 1
[patent_app_number] => 7/345923
[patent_app_country] => US
[patent_app_date] => 1989-05-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/05/011/05011794.pdf
[firstpage_image] =>[orig_patent_app_number] => 345923
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/345923 | Procedure for rapid thermal annealing of implanted semiconductors | Apr 30, 1989 | Issued |
Array
(
[id] => 2772668
[patent_doc_number] => 05132252
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-07-21
[patent_title] => 'Method for fabricating semiconductor devices that prevents pattern contamination'
[patent_app_type] => 1
[patent_app_number] => 7/343456
[patent_app_country] => US
[patent_app_date] => 1989-04-25
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
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[pdf_file] => patents/05/132/05132252.pdf
[firstpage_image] =>[orig_patent_app_number] => 343456
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/343456 | Method for fabricating semiconductor devices that prevents pattern contamination | Apr 24, 1989 | Issued |
Array
(
[id] => 3489063
[patent_doc_number] => 05470799
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-11-28
[patent_title] => 'Method for pretreating semiconductor substrate by photochemically removing native oxide'
[patent_app_type] => 1
[patent_app_number] => 7/342045
[patent_app_country] => US
[patent_app_date] => 1989-04-24
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[firstpage_image] =>[orig_patent_app_number] => 342045
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/342045 | Method for pretreating semiconductor substrate by photochemically removing native oxide | Apr 23, 1989 | Issued |