Application number | Title of the application | Filing Date | Status |
---|
Array
(
[id] => 1972481
[patent_doc_number] => 04347656
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-09-07
[patent_title] => 'Method of fabricating polysilicon electrodes'
[patent_app_type] => 1
[patent_app_number] => 6/218952
[patent_app_country] => US
[patent_app_date] => 1980-12-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 7
[patent_no_of_words] => 5259
[patent_no_of_claims] => 1
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 449
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/347/04347656.pdf
[firstpage_image] =>[orig_patent_app_number] => 218952
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/218952 | Method of fabricating polysilicon electrodes | Dec 21, 1980 | Issued |
Array
(
[id] => 1995931
[patent_doc_number] => 04383872
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-05-17
[patent_title] => 'Method of growing a doped III-V alloy layer by molecular beam epitaxy utilizing a supplemental molecular beam of lead'
[patent_app_type] => 1
[patent_app_number] => 6/216339
[patent_app_country] => US
[patent_app_date] => 1980-12-15
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 4
[patent_no_of_words] => 2957
[patent_no_of_claims] => 4
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 34
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/383/04383872.pdf
[firstpage_image] =>[orig_patent_app_number] => 216339
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/216339 | Method of growing a doped III-V alloy layer by molecular beam epitaxy utilizing a supplemental molecular beam of lead | Dec 14, 1980 | Issued |
Array
(
[id] => 1953079
[patent_doc_number] => 04332070
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-06-01
[patent_title] => 'Method for forming a headless resistor utilizing selective diffusion and special contact formation'
[patent_app_type] => 1
[patent_app_number] => 6/216401
[patent_app_country] => US
[patent_app_date] => 1980-12-15
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 6
[patent_no_of_words] => 1537
[patent_no_of_claims] => 2
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 196
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/332/04332070.pdf
[firstpage_image] =>[orig_patent_app_number] => 216401
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/216401 | Method for forming a headless resistor utilizing selective diffusion and special contact formation | Dec 14, 1980 | Issued |
Array
(
[id] => 2038268
[patent_doc_number] => 04404737
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-09-20
[patent_title] => 'Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching'
[patent_app_type] => 1
[patent_app_number] => 6/210759
[patent_app_country] => US
[patent_app_date] => 1980-11-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
[patent_figures_cnt] => 19
[patent_no_of_words] => 4120
[patent_no_of_claims] => 8
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 192
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/404/04404737.pdf
[firstpage_image] =>[orig_patent_app_number] => 210759
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/210759 | Method for manufacturing a semiconductor integrated circuit utilizing polycrystalline silicon deposition, oxidation and etching | Nov 27, 1980 | Issued |
Array
(
[id] => 1960580
[patent_doc_number] => 04349394
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-09-14
[patent_title] => 'Method of making a zener diode utilizing gas-phase epitaxial deposition'
[patent_app_type] => 1
[patent_app_number] => 6/206385
[patent_app_country] => US
[patent_app_date] => 1980-11-13
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 10
[patent_no_of_words] => 2678
[patent_no_of_claims] => 40
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 28
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/349/04349394.pdf
[firstpage_image] =>[orig_patent_app_number] => 206385
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/206385 | Method of making a zener diode utilizing gas-phase epitaxial deposition | Nov 12, 1980 | Issued |
Array
(
[id] => 2022518
[patent_doc_number] => 04377899
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-03-29
[patent_title] => 'Method of manufacturing Schottky field-effect transistors utilizing shadow masking'
[patent_app_type] => 1
[patent_app_number] => 6/206215
[patent_app_country] => US
[patent_app_date] => 1980-11-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 22
[patent_no_of_words] => 3128
[patent_no_of_claims] => 8
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 140
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/377/04377899.pdf
[firstpage_image] =>[orig_patent_app_number] => 206215
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/206215 | Method of manufacturing Schottky field-effect transistors utilizing shadow masking | Nov 11, 1980 | Issued |
Array
(
[id] => 1959658
[patent_doc_number] => 04358326
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-11-09
[patent_title] => 'Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing'
[patent_app_type] => 1
[patent_app_number] => 6/203039
[patent_app_country] => US
[patent_app_date] => 1980-11-03
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 13
[patent_no_of_words] => 2625
[patent_no_of_claims] => 43
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 141
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/358/04358326.pdf
[firstpage_image] =>[orig_patent_app_number] => 203039
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/203039 | Epitaxially extended polycrystalline structures utilizing a predeposit of amorphous silicon with subsequent annealing | Nov 2, 1980 | Issued |
Array
(
[id] => 1978652
[patent_doc_number] => 04355457
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-10-26
[patent_title] => 'Method of forming a mesa in a semiconductor device with subsequent separation into individual devices'
[patent_app_type] => 1
[patent_app_number] => 6/201826
[patent_app_country] => US
[patent_app_date] => 1980-10-29
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 6
[patent_no_of_words] => 1761
[patent_no_of_claims] => 6
[patent_no_of_ind_claims] => 5
[patent_words_short_claim] => 19
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/355/04355457.pdf
[firstpage_image] =>[orig_patent_app_number] => 201826
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/201826 | Method of forming a mesa in a semiconductor device with subsequent separation into individual devices | Oct 28, 1980 | Issued |
Array
(
[id] => 2019267
[patent_doc_number] => 04370179
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-01-25
[patent_title] => 'Method of making a monolithic complementary Darlington amplifier utilizing diffusion and epitaxial decomposition'
[patent_app_type] => 1
[patent_app_number] => 6/200645
[patent_app_country] => US
[patent_app_date] => 1980-10-27
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 9
[patent_figures_cnt] => 27
[patent_no_of_words] => 14907
[patent_no_of_claims] => 9
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 503
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/370/04370179.pdf
[firstpage_image] =>[orig_patent_app_number] => 200645
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/200645 | Method of making a monolithic complementary Darlington amplifier utilizing diffusion and epitaxial decomposition | Oct 26, 1980 | Issued |
06/191478 | LOCALIZED EPITAXY FOR VLSI DEVICES | Sep 25, 1980 | Abandoned |
Array
(
[id] => 1984927
[patent_doc_number] => 04352237
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-10-05
[patent_title] => 'Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes'
[patent_app_type] => 1
[patent_app_number] => 6/187773
[patent_app_country] => US
[patent_app_date] => 1980-09-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 10
[patent_no_of_words] => 2517
[patent_no_of_claims] => 1
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 318
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/352/04352237.pdf
[firstpage_image] =>[orig_patent_app_number] => 187773
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/187773 | Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes | Sep 15, 1980 | Issued |
Array
(
[id] => 1975627
[patent_doc_number] => 04351100
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-09-28
[patent_title] => 'Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes'
[patent_app_type] => 1
[patent_app_number] => 6/187774
[patent_app_country] => US
[patent_app_date] => 1980-09-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 10
[patent_no_of_words] => 1614
[patent_no_of_claims] => 1
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 271
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/351/04351100.pdf
[firstpage_image] =>[orig_patent_app_number] => 187774
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/187774 | Method for manufacture of integrated semiconductor circuits, in particular CCD-circuits, with self-adjusting, nonoverlapping polysilicon electrodes | Sep 15, 1980 | Issued |
Array
(
[id] => 1948599
[patent_doc_number] => 04354309
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-10-19
[patent_title] => 'Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon'
[patent_app_type] => 1
[patent_app_number] => 6/187036
[patent_app_country] => US
[patent_app_date] => 1980-09-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 13
[patent_no_of_words] => 1845
[patent_no_of_claims] => 6
[patent_no_of_ind_claims] => 4
[patent_words_short_claim] => 88
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/354/04354309.pdf
[firstpage_image] =>[orig_patent_app_number] => 187036
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/187036 | Method of manufacturing a metal-insulator-semiconductor device utilizing a graded deposition of polycrystalline silicon | Sep 11, 1980 | Issued |
Array
(
[id] => 2022573
[patent_doc_number] => 04377904
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-03-29
[patent_title] => 'Method of fabricating a narrow band-gap semiconductor CCD imaging device'
[patent_app_type] => 1
[patent_app_number] => 6/185468
[patent_app_country] => US
[patent_app_date] => 1980-09-09
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 8
[patent_no_of_words] => 1846
[patent_no_of_claims] => 5
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 184
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/377/04377904.pdf
[firstpage_image] =>[orig_patent_app_number] => 185468
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/185468 | Method of fabricating a narrow band-gap semiconductor CCD imaging device | Sep 8, 1980 | Issued |
Array
(
[id] => 2052275
[patent_doc_number] => RE031506
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1984-01-24
[patent_title] => 'Method of manufacturing oxide isolated semiconductor device utilizing selective etching technique'
[patent_app_type] => 2
[patent_app_number] => 6/183100
[patent_app_country] => US
[patent_app_date] => 1980-09-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 14
[patent_no_of_words] => 2948
[patent_no_of_claims] => 6
[patent_no_of_ind_claims] => 5
[patent_words_short_claim] => 0
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/RE/031/RE031506.pdf
[firstpage_image] =>[orig_patent_app_number] => 183100
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/183100 | Method of manufacturing oxide isolated semiconductor device utilizing selective etching technique | Sep 1, 1980 | Issued |
Array
(
[id] => 2013685
[patent_doc_number] => 04369565
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-01-25
[patent_title] => 'Method of manufacturing a semiconductor device utilizing etch and refill to form isolation regions'
[patent_app_type] => 1
[patent_app_number] => 6/179983
[patent_app_country] => US
[patent_app_date] => 1980-08-21
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 16
[patent_no_of_words] => 2709
[patent_no_of_claims] => 12
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 200
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/369/04369565.pdf
[firstpage_image] =>[orig_patent_app_number] => 179983
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/179983 | Method of manufacturing a semiconductor device utilizing etch and refill to form isolation regions | Aug 20, 1980 | Issued |
Array
(
[id] => 1984745
[patent_doc_number] => 04357183
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-11-02
[patent_title] => 'Heteroepitaxy of germanium silicon on silicon utilizing alloying control'
[patent_app_type] => 1
[patent_app_number] => 6/177567
[patent_app_country] => US
[patent_app_date] => 1980-08-13
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 4
[patent_no_of_words] => 3019
[patent_no_of_claims] => 5
[patent_no_of_ind_claims] => 3
[patent_words_short_claim] => 107
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/357/04357183.pdf
[firstpage_image] =>[orig_patent_app_number] => 177567
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/177567 | Heteroepitaxy of germanium silicon on silicon utilizing alloying control | Aug 12, 1980 | Issued |
Array
(
[id] => 1990179
[patent_doc_number] => 04322883
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-04-06
[patent_title] => 'Self-aligned metal process for integrated injection logic integrated circuits'
[patent_app_type] => 1
[patent_app_number] => 6/167173
[patent_app_country] => US
[patent_app_date] => 1980-07-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 7
[patent_no_of_words] => 4245
[patent_no_of_claims] => 13
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 401
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/322/04322883.pdf
[firstpage_image] =>[orig_patent_app_number] => 167173
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/167173 | Self-aligned metal process for integrated injection logic integrated circuits | Jul 7, 1980 | Issued |
Array
(
[id] => 2005423
[patent_doc_number] => 04368085
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-01-11
[patent_title] => 'SOS island edge passivation structure'
[patent_app_type] => 1
[patent_app_number] => 6/166950
[patent_app_country] => US
[patent_app_date] => 1980-07-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 9
[patent_no_of_words] => 1362
[patent_no_of_claims] => 1
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 105
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/368/04368085.pdf
[firstpage_image] =>[orig_patent_app_number] => 166950
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/166950 | SOS island edge passivation structure | Jul 7, 1980 | Issued |
Array
(
[id] => 2043037
[patent_doc_number] => 04378627
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-04-05
[patent_title] => 'Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes'
[patent_app_type] => 1
[patent_app_number] => 6/167172
[patent_app_country] => US
[patent_app_date] => 1980-07-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 20
[patent_no_of_words] => 5444
[patent_no_of_claims] => 8
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 468
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/378/04378627.pdf
[firstpage_image] =>[orig_patent_app_number] => 167172
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/167172 | Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes | Jul 7, 1980 | Issued |