| Application number | Title of the application | Filing Date | Status |
|---|
Array
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[patent_issue_date] => 1993-06-15
[patent_title] => 'Method of forming current barriers in semiconductor lasers'
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[patent_app_number] => 7/557901
[patent_app_country] => US
[patent_app_date] => 1990-07-25
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| 07/556611 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SCHOTTKY ELECTRODES | Jul 23, 1990 | Abandoned |
Array
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[patent_issue_date] => 1993-03-16
[patent_title] => 'Installation for transport and processing under a pulsating double-floating condition'
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[patent_app_date] => 1990-07-24
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/474818 | Installation for transport and processing under a pulsating double-floating condition | Jul 23, 1990 | Issued |
Array
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[id] => 2946398
[patent_doc_number] => 05180690
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-01-19
[patent_title] => 'Method of forming a layer of doped crystalline semiconductor alloy material'
[patent_app_type] => 1
[patent_app_number] => 7/551684
[patent_app_country] => US
[patent_app_date] => 1990-07-09
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[firstpage_image] =>[orig_patent_app_number] => 551684
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/551684 | Method of forming a layer of doped crystalline semiconductor alloy material | Jul 8, 1990 | Issued |
Array
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[id] => 2669099
[patent_doc_number] => 04999313
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-03-12
[patent_title] => 'Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material'
[patent_app_type] => 1
[patent_app_number] => 7/528916
[patent_app_country] => US
[patent_app_date] => 1990-05-29
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/528916 | Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material | May 28, 1990 | Issued |
| 07/520982 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH PHOTORESIST ON A SILICON OXIDE LAYER ON A SEMICONDUCTOR SUBSTRATE IS STRIPPED | May 6, 1990 | Abandoned |
Array
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[patent_doc_number] => 05316974
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-05-31
[patent_title] => 'Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer'
[patent_app_type] => 1
[patent_app_number] => 7/516637
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| 07/515640 | PROCESS FOR THE FORMATION OF A POLYCRYSTALLINE SEMICONDUCTOR FILM BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION METHOD | Apr 26, 1990 | Abandoned |
| 07/506182 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE | Apr 8, 1990 | Abandoned |
| 07/504699 | METHOD FOR THE MANUFACTURE OF BORON-CONTAINING FILMS | Apr 4, 1990 | Abandoned |
Array
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[patent_issue_date] => 1992-06-16
[patent_title] => 'Method for treating surface of silicon'
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[firstpage_image] =>[orig_patent_app_number] => 498221
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Array
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[patent_doc_number] => 05024969
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-06-18
[patent_title] => 'Hybrid circuit structure fabrication methods using high energy electron beam curing'
[patent_app_type] => 1
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[patent_app_date] => 1990-02-23
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[firstpage_image] =>[orig_patent_app_number] => 484376
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/484376 | Hybrid circuit structure fabrication methods using high energy electron beam curing | Feb 22, 1990 | Issued |
Array
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[id] => 2644802
[patent_doc_number] => 04980304
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1990-12-25
[patent_title] => 'Process for fabricating a bipolar transistor with a self-aligned contact'
[patent_app_type] => 1
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/482437 | Process for fabricating a bipolar transistor with a self-aligned contact | Feb 19, 1990 | Issued |
Array
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[id] => 2706147
[patent_doc_number] => 04981818
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-01-01
[patent_title] => 'Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors'
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[firstpage_image] =>[orig_patent_app_number] => 479486
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/479486 | Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors | Feb 12, 1990 | Issued |
| 07/477532 | METHOD FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL BY PLASA-INDUCED VAPOR PHASE DEPOSITION | Feb 8, 1990 | Abandoned |
| 07/477012 | HYDROGEN PLASMA PASSIVATION OF GAAS | Feb 6, 1990 | Abandoned |
| 07/474610 | APPARATUS AND PROCESS FOR FABRICATING SEMICONDUCTOR DEVICES | Feb 4, 1990 | Abandoned |
Array
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[patent_title] => 'Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/458716 | Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons | Feb 4, 1990 | Issued |
Array
(
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[patent_kind] => NA
[patent_issue_date] => 1994-05-24
[patent_title] => 'Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer'
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Array
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