Search

Chia-yi Liu

Examiner (ID: 6898, Phone: (571)270-1573 , Office: P/3695 )

Most Active Art Unit
3695
Art Unit(s)
3696, 3695, 3692
Total Applications
371
Issued Applications
94
Pending Applications
34
Abandoned Applications
245

Applications

Application numberTitle of the applicationFiling DateStatus
Array ( [id] => 2930296 [patent_doc_number] => 05219785 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1993-06-15 [patent_title] => 'Method of forming current barriers in semiconductor lasers' [patent_app_type] => 1 [patent_app_number] => 7/557901 [patent_app_country] => US [patent_app_date] => 1990-07-25 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 13 [patent_no_of_words] => 6254 [patent_no_of_claims] => 13 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 173 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/219/05219785.pdf [firstpage_image] =>[orig_patent_app_number] => 557901 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/557901
Method of forming current barriers in semiconductor lasers Jul 24, 1990 Issued
07/556611 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH SCHOTTKY ELECTRODES Jul 23, 1990 Abandoned
Array ( [id] => 2971251 [patent_doc_number] => 05194406 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1993-03-16 [patent_title] => 'Installation for transport and processing under a pulsating double-floating condition' [patent_app_type] => 1 [patent_app_number] => 7/474818 [patent_app_country] => US [patent_app_date] => 1990-07-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 23 [patent_figures_cnt] => 94 [patent_no_of_words] => 10259 [patent_no_of_claims] => 27 [patent_no_of_ind_claims] => 3 [patent_words_short_claim] => 85 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/194/05194406.pdf [firstpage_image] =>[orig_patent_app_number] => 474818 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/474818
Installation for transport and processing under a pulsating double-floating condition Jul 23, 1990 Issued
Array ( [id] => 2946398 [patent_doc_number] => 05180690 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1993-01-19 [patent_title] => 'Method of forming a layer of doped crystalline semiconductor alloy material' [patent_app_type] => 1 [patent_app_number] => 7/551684 [patent_app_country] => US [patent_app_date] => 1990-07-09 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 3 [patent_no_of_words] => 6292 [patent_no_of_claims] => 32 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 205 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/180/05180690.pdf [firstpage_image] =>[orig_patent_app_number] => 551684 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/551684
Method of forming a layer of doped crystalline semiconductor alloy material Jul 8, 1990 Issued
Array ( [id] => 2669099 [patent_doc_number] => 04999313 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-03-12 [patent_title] => 'Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material' [patent_app_type] => 1 [patent_app_number] => 7/528916 [patent_app_country] => US [patent_app_date] => 1990-05-29 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 13 [patent_figures_cnt] => 32 [patent_no_of_words] => 5933 [patent_no_of_claims] => 3 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 151 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/04/999/04999313.pdf [firstpage_image] =>[orig_patent_app_number] => 528916 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/528916
Preparation of a semiconductor article using an amorphous seed to grow single crystal semiconductor material May 28, 1990 Issued
07/520982 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, IN WHICH PHOTORESIST ON A SILICON OXIDE LAYER ON A SEMICONDUCTOR SUBSTRATE IS STRIPPED May 6, 1990 Abandoned
Array ( [id] => 3027759 [patent_doc_number] => 05316974 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1994-05-31 [patent_title] => 'Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer' [patent_app_type] => 1 [patent_app_number] => 7/516637 [patent_app_country] => US [patent_app_date] => 1990-04-30 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 2 [patent_figures_cnt] => 8 [patent_no_of_words] => 1799 [patent_no_of_claims] => 12 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 103 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/316/05316974.pdf [firstpage_image] =>[orig_patent_app_number] => 516637 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/516637
Integrated circuit copper metallization process using a lift-off seed layer and a thick-plated conductor layer Apr 29, 1990 Issued
07/515640 PROCESS FOR THE FORMATION OF A POLYCRYSTALLINE SEMICONDUCTOR FILM BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION METHOD Apr 26, 1990 Abandoned
07/506182 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Apr 8, 1990 Abandoned
07/504699 METHOD FOR THE MANUFACTURE OF BORON-CONTAINING FILMS Apr 4, 1990 Abandoned
Array ( [id] => 2814377 [patent_doc_number] => 05122482 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1992-06-16 [patent_title] => 'Method for treating surface of silicon' [patent_app_type] => 1 [patent_app_number] => 7/498221 [patent_app_country] => US [patent_app_date] => 1990-03-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 6 [patent_no_of_words] => 3562 [patent_no_of_claims] => 37 [patent_no_of_ind_claims] => 5 [patent_words_short_claim] => 129 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/122/05122482.pdf [firstpage_image] =>[orig_patent_app_number] => 498221 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/498221
Method for treating surface of silicon Mar 22, 1990 Issued
Array ( [id] => 2722815 [patent_doc_number] => 05024969 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-06-18 [patent_title] => 'Hybrid circuit structure fabrication methods using high energy electron beam curing' [patent_app_type] => 1 [patent_app_number] => 7/484376 [patent_app_country] => US [patent_app_date] => 1990-02-23 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 2 [patent_no_of_words] => 2316 [patent_no_of_claims] => 8 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 123 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/024/05024969.pdf [firstpage_image] =>[orig_patent_app_number] => 484376 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/484376
Hybrid circuit structure fabrication methods using high energy electron beam curing Feb 22, 1990 Issued
Array ( [id] => 2644802 [patent_doc_number] => 04980304 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1990-12-25 [patent_title] => 'Process for fabricating a bipolar transistor with a self-aligned contact' [patent_app_type] => 1 [patent_app_number] => 7/482437 [patent_app_country] => US [patent_app_date] => 1990-02-20 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 10 [patent_no_of_words] => 4027 [patent_no_of_claims] => 5 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 312 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/04/980/04980304.pdf [firstpage_image] =>[orig_patent_app_number] => 482437 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/482437
Process for fabricating a bipolar transistor with a self-aligned contact Feb 19, 1990 Issued
Array ( [id] => 2706147 [patent_doc_number] => 04981818 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-01-01 [patent_title] => 'Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors' [patent_app_type] => 1 [patent_app_number] => 7/479486 [patent_app_country] => US [patent_app_date] => 1990-02-13 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 1835 [patent_no_of_claims] => 9 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 116 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/04/981/04981818.pdf [firstpage_image] =>[orig_patent_app_number] => 479486 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/479486
Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors Feb 12, 1990 Issued
07/477532 METHOD FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR MATERIAL BY PLASA-INDUCED VAPOR PHASE DEPOSITION Feb 8, 1990 Abandoned
07/477012 HYDROGEN PLASMA PASSIVATION OF GAAS Feb 6, 1990 Abandoned
07/474610 APPARATUS AND PROCESS FOR FABRICATING SEMICONDUCTOR DEVICES Feb 4, 1990 Abandoned
Array ( [id] => 2706454 [patent_doc_number] => 05055421 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-10-08 [patent_title] => 'Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons' [patent_app_type] => 1 [patent_app_number] => 7/458716 [patent_app_country] => US [patent_app_date] => 1990-02-05 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 1 [patent_no_of_words] => 2638 [patent_no_of_claims] => 11 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 107 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/055/05055421.pdf [firstpage_image] =>[orig_patent_app_number] => 458716 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/458716
Method for the plasma deposition of hydrogenated, amorphous carbon using predetermined retention times of gaseous hydrocarbons Feb 4, 1990 Issued
Array ( [id] => 3098285 [patent_doc_number] => 05314845 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1994-05-24 [patent_title] => 'Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer' [patent_app_type] => 1 [patent_app_number] => 7/474177 [patent_app_country] => US [patent_app_date] => 1990-02-02 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 1 [patent_figures_cnt] => 3 [patent_no_of_words] => 3982 [patent_no_of_claims] => 24 [patent_no_of_ind_claims] => 4 [patent_words_short_claim] => 174 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/314/05314845.pdf [firstpage_image] =>[orig_patent_app_number] => 474177 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/474177
Two step process for forming void-free oxide layer over stepped surface of semiconductor wafer Feb 1, 1990 Issued
Array ( [id] => 2727383 [patent_doc_number] => 05039358 [patent_country] => US [patent_kind] => NA [patent_issue_date] => 1991-08-13 [patent_title] => 'Amorphous, hydrogenated carbon electroactive passivation layer' [patent_app_type] => 1 [patent_app_number] => 7/473577 [patent_app_country] => US [patent_app_date] => 1990-02-01 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 1605 [patent_no_of_claims] => 14 [patent_no_of_ind_claims] => 2 [patent_words_short_claim] => 60 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] => patents/05/039/05039358.pdf [firstpage_image] =>[orig_patent_app_number] => 473577 [rel_patent_id] =>[rel_patent_doc_number] =>)
07/473577
Amorphous, hydrogenated carbon electroactive passivation layer Jan 31, 1990 Issued
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