| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 3049835
[patent_doc_number] => 05283202
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-02-01
[patent_title] => 'IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions'
[patent_app_type] => 1
[patent_app_number] => 7/945817
[patent_app_country] => US
[patent_app_date] => 1992-09-15
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[firstpage_image] =>[orig_patent_app_number] => 945817
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/945817 | IGBT device with platinum lifetime control having gradient or profile tailored platinum diffusion regions | Sep 14, 1992 | Issued |
Array
(
[id] => 3013811
[patent_doc_number] => 05326427
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-07-05
[patent_title] => 'Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation'
[patent_app_type] => 1
[patent_app_number] => 7/943839
[patent_app_country] => US
[patent_app_date] => 1992-09-11
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[firstpage_image] =>[orig_patent_app_number] => 943839
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/943839 | Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation | Sep 10, 1992 | Issued |
Array
(
[id] => 3000310
[patent_doc_number] => 05354387
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-10-11
[patent_title] => 'Boron phosphorus silicate glass composite layer on semiconductor wafer'
[patent_app_type] => 1
[patent_app_number] => 7/935951
[patent_app_country] => US
[patent_app_date] => 1992-08-25
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[pdf_file] => patents/05/354/05354387.pdf
[firstpage_image] =>[orig_patent_app_number] => 935951
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/935951 | Boron phosphorus silicate glass composite layer on semiconductor wafer | Aug 24, 1992 | Issued |
Array
(
[id] => 2933808
[patent_doc_number] => 05246885
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-09-21
[patent_title] => 'Deposition method for high aspect ratio features using photoablation'
[patent_app_type] => 1
[patent_app_number] => 7/933951
[patent_app_country] => US
[patent_app_date] => 1992-08-20
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/246/05246885.pdf
[firstpage_image] =>[orig_patent_app_number] => 933951
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/933951 | Deposition method for high aspect ratio features using photoablation | Aug 19, 1992 | Issued |
Array
(
[id] => 3049813
[patent_doc_number] => 05283201
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-02-01
[patent_title] => 'High density power device fabrication process'
[patent_app_type] => 1
[patent_app_number] => 7/927169
[patent_app_country] => US
[patent_app_date] => 1992-08-07
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[pdf_file] => patents/05/283/05283201.pdf
[firstpage_image] =>[orig_patent_app_number] => 927169
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/927169 | High density power device fabrication process | Aug 6, 1992 | Issued |
| 07/907750 | MICROWAVE ENERGIZED DEPOSITION PROCESS WITH SUBSTRATE TEMPERATURE CONTROL | Jun 28, 1992 | Abandoned |
| 07/904128 | METHOD FOR VAPOR PHASE ETCHING OF SILICON | Jun 24, 1992 | Abandoned |
| 07/902757 | UHF/VHF PLASMA PROCESS FOR USE IN FORMING INTEGRATED CIRCUIT STRUCTURES ON SEIMCONDUCTOR WAFERS | Jun 22, 1992 | Abandoned |
Array
(
[id] => 3002090
[patent_doc_number] => 05275692
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-01-04
[patent_title] => 'Method for fabricating integrated circuits'
[patent_app_type] => 1
[patent_app_number] => 7/902221
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[patent_app_date] => 1992-06-22
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[pdf_file] => patents/05/275/05275692.pdf
[firstpage_image] =>[orig_patent_app_number] => 902221
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/902221 | Method for fabricating integrated circuits | Jun 21, 1992 | Issued |
| 07/901162 | PHOTO-EXCITED PROCESSING APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE BY USING THE SAME | Jun 18, 1992 | Abandoned |
| 07/901161 | PHOTO-EXCITED PROCESSING APPARATUS FOR MANUFACTURING A SEMICONDUCTOR DEVICE THAT USES A CYLINDRICAL REFLECTING SURFACE | Jun 18, 1992 | Abandoned |
Array
(
[id] => 3068000
[patent_doc_number] => 05296094
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-03-22
[patent_title] => 'Process for etching silicon dioxide layer without micro masking effect'
[patent_app_type] => 1
[patent_app_number] => 7/897768
[patent_app_country] => US
[patent_app_date] => 1992-06-12
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[pdf_file] => patents/05/296/05296094.pdf
[firstpage_image] =>[orig_patent_app_number] => 897768
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/897768 | Process for etching silicon dioxide layer without micro masking effect | Jun 11, 1992 | Issued |
Array
(
[id] => 3095338
[patent_doc_number] => 05318928
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-06-07
[patent_title] => 'Method for the surface passivation of sensors using an in situ sputter cleaning step prior to passivation film deposition'
[patent_app_type] => 1
[patent_app_number] => 7/897310
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[patent_app_date] => 1992-06-11
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[pdf_file] => patents/05/318/05318928.pdf
[firstpage_image] =>[orig_patent_app_number] => 897310
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/897310 | Method for the surface passivation of sensors using an in situ sputter cleaning step prior to passivation film deposition | Jun 10, 1992 | Issued |
Array
(
[id] => 2903465
[patent_doc_number] => 05248636
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-09-28
[patent_title] => 'Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation'
[patent_app_type] => 1
[patent_app_number] => 7/892460
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[firstpage_image] =>[orig_patent_app_number] => 892460
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/892460 | Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation | Jun 1, 1992 | Issued |
Array
(
[id] => 3091262
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[patent_kind] => NA
[patent_issue_date] => 1994-05-17
[patent_title] => 'Process for the preparation of a high dielectric thin film using ECR plasma CVD'
[patent_app_type] => 1
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[firstpage_image] =>[orig_patent_app_number] => 891154
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/891154 | Process for the preparation of a high dielectric thin film using ECR plasma CVD | May 27, 1992 | Issued |
Array
(
[id] => 3006764
[patent_doc_number] => 05330936
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-07-19
[patent_title] => 'Method of producing a silicon nitride film and method of fabricating a semiconductor device'
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[firstpage_image] =>[orig_patent_app_number] => 888486
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/888486 | Method of producing a silicon nitride film and method of fabricating a semiconductor device | May 26, 1992 | Issued |
Array
(
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[patent_issue_date] => 1995-08-22
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/884456 | Method for transferring heat to or from a semiconductor wafer using a portion of a process gas | May 12, 1992 | Issued |
Array
(
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[firstpage_image] =>[orig_patent_app_number] => 869465
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/869465 | Pyrometer temperature measurement of plural wafers stacked on a processing chamber | Apr 14, 1992 | Issued |
Array
(
[id] => 3006791
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[patent_kind] => NA
[patent_issue_date] => 1994-10-11
[patent_title] => 'Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process'
[patent_app_type] => 1
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/861719 | Thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process | Mar 31, 1992 | Issued |
Array
(
[id] => 2903373
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[patent_issue_date] => 1993-09-28
[patent_title] => 'Thin film silicon semiconductor device and process for producing thereof'
[patent_app_type] => 1
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[firstpage_image] =>[orig_patent_app_number] => 857944
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/857944 | Thin film silicon semiconductor device and process for producing thereof | Mar 25, 1992 | Issued |