| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 2974122
[patent_doc_number] => 05225378
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-07-06
[patent_title] => 'Method of forming a phosphorus doped silicon film'
[patent_app_type] => 1
[patent_app_number] => 7/775618
[patent_app_country] => US
[patent_app_date] => 1991-10-15
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/05/225/05225378.pdf
[firstpage_image] =>[orig_patent_app_number] => 775618
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/775618 | Method of forming a phosphorus doped silicon film | Oct 14, 1991 | Issued |
Array
(
[id] => 2941146
[patent_doc_number] => 05223457
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-06-29
[patent_title] => 'High-frequency semiconductor wafer processing method using a negative self-bias'
[patent_app_type] => 1
[patent_app_number] => 7/774127
[patent_app_country] => US
[patent_app_date] => 1991-10-11
[patent_effective_date] => 0000-00-00
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/223/05223457.pdf
[firstpage_image] =>[orig_patent_app_number] => 774127
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/774127 | High-frequency semiconductor wafer processing method using a negative self-bias | Oct 10, 1991 | Issued |
Array
(
[id] => 2824799
[patent_doc_number] => 05116784
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-05-26
[patent_title] => 'Method of forming semiconductor film'
[patent_app_type] => 1
[patent_app_number] => 7/773430
[patent_app_country] => US
[patent_app_date] => 1991-10-09
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[patent_words_short_claim] => 237
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[pdf_file] => patents/05/116/05116784.pdf
[firstpage_image] =>[orig_patent_app_number] => 773430
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/773430 | Method of forming semiconductor film | Oct 8, 1991 | Issued |
Array
(
[id] => 2946329
[patent_doc_number] => 05180686
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-01-19
[patent_title] => 'Method for continuously deposting a transparent oxide material by chemical pyrolysis'
[patent_app_type] => 1
[patent_app_number] => 7/770734
[patent_app_country] => US
[patent_app_date] => 1991-10-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/180/05180686.pdf
[firstpage_image] =>[orig_patent_app_number] => 770734
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/770734 | Method for continuously deposting a transparent oxide material by chemical pyrolysis | Sep 30, 1991 | Issued |
Array
(
[id] => 3098337
[patent_doc_number] => 05314848
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-05-24
[patent_title] => 'Method for manufacturing a semiconductor device using a heat treatment according to a temperature profile that prevents grain or particle precipitation during reflow'
[patent_app_type] => 1
[patent_app_number] => 7/764846
[patent_app_country] => US
[patent_app_date] => 1991-09-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 14
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/314/05314848.pdf
[firstpage_image] =>[orig_patent_app_number] => 764846
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/764846 | Method for manufacturing a semiconductor device using a heat treatment according to a temperature profile that prevents grain or particle precipitation during reflow | Sep 23, 1991 | Issued |
Array
(
[id] => 2985520
[patent_doc_number] => 05266527
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-11-30
[patent_title] => 'Conformal wafer chuck for plasma processing having a non-planar surface'
[patent_app_type] => 1
[patent_app_number] => 7/761202
[patent_app_country] => US
[patent_app_date] => 1991-09-17
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/05/266/05266527.pdf
[firstpage_image] =>[orig_patent_app_number] => 761202
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/761202 | Conformal wafer chuck for plasma processing having a non-planar surface | Sep 16, 1991 | Issued |
Array
(
[id] => 2894730
[patent_doc_number] => 05183777
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-02-02
[patent_title] => 'Method of forming shallow junctions'
[patent_app_type] => 1
[patent_app_number] => 7/759767
[patent_app_country] => US
[patent_app_date] => 1991-09-13
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 10
[patent_figures_cnt] => 24
[patent_no_of_words] => 4459
[patent_no_of_claims] => 11
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[patent_words_short_claim] => 120
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/183/05183777.pdf
[firstpage_image] =>[orig_patent_app_number] => 759767
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/759767 | Method of forming shallow junctions | Sep 12, 1991 | Issued |
| 07/759376 | TEMPERATURE CONTROLLED PROCESS FOR EPITAXIAL GROWTH OF A FILM OF MATERIAL | Sep 12, 1991 | Abandoned |
Array
(
[id] => 2887419
[patent_doc_number] => 05238866
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-08-24
[patent_title] => 'Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating'
[patent_app_type] => 1
[patent_app_number] => 7/756568
[patent_app_country] => US
[patent_app_date] => 1991-09-11
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 8
[patent_no_of_words] => 2757
[patent_no_of_claims] => 4
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 260
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/238/05238866.pdf
[firstpage_image] =>[orig_patent_app_number] => 756568
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/756568 | Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating | Sep 10, 1991 | Issued |
Array
(
[id] => 2814358
[patent_doc_number] => 05122481
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-06-16
[patent_title] => 'Semiconductor element manufacturing process using sequential grinding and chemical etching steps'
[patent_app_type] => 1
[patent_app_number] => 7/754906
[patent_app_country] => US
[patent_app_date] => 1991-09-04
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
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[pdf_file] => patents/05/122/05122481.pdf
[firstpage_image] =>[orig_patent_app_number] => 754906
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/754906 | Semiconductor element manufacturing process using sequential grinding and chemical etching steps | Sep 3, 1991 | Issued |
| 07/751441 | IGBT PROCESS TO PRODUCE PLATINUM LIFETIME CONTROL | Aug 27, 1991 | Abandoned |
| 07/748376 | REMOVAL OF SUBSTRATE PERIMETER MATERIAL | Aug 21, 1991 | Abandoned |
Array
(
[id] => 2986240
[patent_doc_number] => 05212118
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-05-18
[patent_title] => 'Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates'
[patent_app_type] => 1
[patent_app_number] => 7/743546
[patent_app_country] => US
[patent_app_date] => 1991-08-09
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/212/05212118.pdf
[firstpage_image] =>[orig_patent_app_number] => 743546
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/743546 | Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates | Aug 8, 1991 | Issued |
| 07/742256 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE | Aug 7, 1991 | Abandoned |
Array
(
[id] => 2982604
[patent_doc_number] => 05250473
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-10-05
[patent_title] => 'Method of providing silicon dioxide layer on a substrate by means of chemical reaction from the vapor phase at a low pressure (LPCVD)'
[patent_app_type] => 1
[patent_app_number] => 7/739624
[patent_app_country] => US
[patent_app_date] => 1991-08-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[pdf_file] => patents/05/250/05250473.pdf
[firstpage_image] =>[orig_patent_app_number] => 739624
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/739624 | Method of providing silicon dioxide layer on a substrate by means of chemical reaction from the vapor phase at a low pressure (LPCVD) | Aug 1, 1991 | Issued |
Array
(
[id] => 2974141
[patent_doc_number] => 05182234
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-01-26
[patent_title] => 'Profile tailored trench etch using a SF.sub.6 -O.sub.2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen'
[patent_app_type] => 1
[patent_app_number] => 7/737560
[patent_app_country] => US
[patent_app_date] => 1991-07-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 9
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[pdf_file] => patents/05/182/05182234.pdf
[firstpage_image] =>[orig_patent_app_number] => 737560
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/737560 | Profile tailored trench etch using a SF.sub.6 -O.sub.2 etching composition wherein both isotropic and anisotropic etching is achieved by varying the amount of oxygen | Jul 25, 1991 | Issued |
| 07/734027 | METHOD FOR COOLING SEMICONDUCTOR WAFERS USING A PORTION OF THE FLUORINATED HYDROCARBON COMPONENT OF THE PROCESS GAS | Jul 21, 1991 | Abandoned |
| 07/730674 | DIELECTRIC DEPOSITION AND CLEANING PROCESS FOR IMPROVED GAP FILLING AND DEVICE PLANARIZATION | Jul 15, 1991 | Abandoned |
Array
(
[id] => 2933848
[patent_doc_number] => 05246887
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-09-21
[patent_title] => 'Dielectric deposition'
[patent_app_type] => 1
[patent_app_number] => 7/727698
[patent_app_country] => US
[patent_app_date] => 1991-07-10
[patent_effective_date] => 0000-00-00
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/246/05246887.pdf
[firstpage_image] =>[orig_patent_app_number] => 727698
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/727698 | Dielectric deposition | Jul 9, 1991 | Issued |
Array
(
[id] => 3049872
[patent_doc_number] => 05306671
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-04-26
[patent_title] => 'Method of treating semiconductor substrate surface and method of manufacturing semiconductor device including such treating method'
[patent_app_type] => 1
[patent_app_number] => 7/718674
[patent_app_country] => US
[patent_app_date] => 1991-06-21
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/306/05306671.pdf
[firstpage_image] =>[orig_patent_app_number] => 718674
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/718674 | Method of treating semiconductor substrate surface and method of manufacturing semiconductor device including such treating method | Jun 20, 1991 | Issued |