Christina Ann Johnson
Supervisory Patent Examiner (ID: 1313, Phone: (571)272-1176 , Office: P/1742 )
Most Active Art Unit | 1725 |
Art Unit(s) | 1732, 1725, 1742, 1754, 1791 |
Total Applications | 736 |
Issued Applications | 453 |
Pending Applications | 43 |
Abandoned Applications | 240 |
Applications
Application number | Title of the application | Filing Date | Status |
---|---|---|---|
Array
(
[id] => 4381298
[patent_doc_number] => 06277714
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-08-21
[patent_title] => 'Metal-contact induced crystallization in semiconductor devices'
[patent_app_type] => 1
[patent_app_number] => 9/400496
[patent_app_country] => US
[patent_app_date] => 1999-09-21
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
[patent_figures_cnt] => 14
[patent_no_of_words] => 3184
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[patent_words_short_claim] => 75
[patent_maintenance] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/277/06277714.pdf
[firstpage_image] =>[orig_patent_app_number] => 400496
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/400496 | Metal-contact induced crystallization in semiconductor devices | Sep 20, 1999 | Issued |
Array
(
[id] => 4302146
[patent_doc_number] => 06187606
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-02-13
[patent_title] => 'Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure'
[patent_app_type] => 1
[patent_app_number] => 9/399445
[patent_app_country] => US
[patent_app_date] => 1999-09-20
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
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[patent_no_of_words] => 4205
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[patent_maintenance] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/187/06187606.pdf
[firstpage_image] =>[orig_patent_app_number] => 399445
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/399445 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure | Sep 19, 1999 | Issued |
Array
(
[id] => 4270557
[patent_doc_number] => 06323053
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-11-27
[patent_title] => 'Growth of GaN on Si substrate using GaSe buffer layer'
[patent_app_type] => 1
[patent_app_number] => 9/395175
[patent_app_country] => US
[patent_app_date] => 1999-09-14
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 12
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[patent_no_of_words] => 11318
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[pdf_file] => patents/06/323/06323053.pdf
[firstpage_image] =>[orig_patent_app_number] => 395175
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/395175 | Growth of GaN on Si substrate using GaSe buffer layer | Sep 13, 1999 | Issued |
Array
(
[id] => 4293159
[patent_doc_number] => 06197609
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-03-06
[patent_title] => 'Method for manufacturing semiconductor light emitting device'
[patent_app_type] => 1
[patent_app_number] => 9/391625
[patent_app_country] => US
[patent_app_date] => 1999-09-07
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 6
[patent_no_of_words] => 3105
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[pdf_file] => patents/06/197/06197609.pdf
[firstpage_image] =>[orig_patent_app_number] => 391625
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/391625 | Method for manufacturing semiconductor light emitting device | Sep 6, 1999 | Issued |
Array
(
[id] => 1441059
[patent_doc_number] => 06335269
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-01-01
[patent_title] => 'Semiconductor substrate and method for producing the same'
[patent_app_type] => B1
[patent_app_number] => 09/390296
[patent_app_country] => US
[patent_app_date] => 1999-09-03
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/335/06335269.pdf
[firstpage_image] =>[orig_patent_app_number] => 09390296
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/390296 | Semiconductor substrate and method for producing the same | Sep 2, 1999 | Issued |
Array
(
[id] => 4293974
[patent_doc_number] => 06197666
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-03-06
[patent_title] => 'Method for the fabrication of a doped silicon layer'
[patent_app_type] => 1
[patent_app_number] => 9/390496
[patent_app_country] => US
[patent_app_date] => 1999-09-03
[patent_effective_date] => 0000-00-00
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[patent_no_of_words] => 2151
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[pdf_file] => patents/06/197/06197666.pdf
[firstpage_image] =>[orig_patent_app_number] => 390496
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/390496 | Method for the fabrication of a doped silicon layer | Sep 2, 1999 | Issued |
Array
(
[id] => 4404934
[patent_doc_number] => 06271104
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-08-07
[patent_title] => 'Fabrication of defect free III-nitride materials'
[patent_app_type] => 1
[patent_app_number] => 9/369535
[patent_app_country] => US
[patent_app_date] => 1999-08-06
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[pdf_file] => patents/06/271/06271104.pdf
[firstpage_image] =>[orig_patent_app_number] => 369535
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/369535 | Fabrication of defect free III-nitride materials | Aug 5, 1999 | Issued |
Array
(
[id] => 4326160
[patent_doc_number] => 06319742
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-11-20
[patent_title] => 'Method of forming nitride based semiconductor layer'
[patent_app_type] => 1
[patent_app_number] => 9/361246
[patent_app_country] => US
[patent_app_date] => 1999-07-27
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/319/06319742.pdf
[firstpage_image] =>[orig_patent_app_number] => 361246
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/361246 | Method of forming nitride based semiconductor layer | Jul 26, 1999 | Issued |
Array
(
[id] => 4404376
[patent_doc_number] => 06271061
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-08-07
[patent_title] => 'Fabrication of insulated gate bipolar devices'
[patent_app_type] => 1
[patent_app_number] => 9/354880
[patent_app_country] => US
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[pdf_file] => patents/06/271/06271061.pdf
[firstpage_image] =>[orig_patent_app_number] => 354880
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/354880 | Fabrication of insulated gate bipolar devices | Jul 15, 1999 | Issued |
Array
(
[id] => 4168460
[patent_doc_number] => 06140142
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-10-31
[patent_title] => 'Semiconductor laser and a method for producing the same'
[patent_app_type] => 1
[patent_app_number] => 9/350795
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[patent_app_date] => 1999-07-09
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[pdf_file] => patents/06/140/06140142.pdf
[firstpage_image] =>[orig_patent_app_number] => 350795
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/350795 | Semiconductor laser and a method for producing the same | Jul 8, 1999 | Issued |
Array
(
[id] => 4349776
[patent_doc_number] => 06291257
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-09-18
[patent_title] => 'Semiconductor photonic device having a ZnO film as a buffer layer and method for forming the ZnO film'
[patent_app_type] => 1
[patent_app_number] => 9/342607
[patent_app_country] => US
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[pdf_file] => patents/06/291/06291257.pdf
[firstpage_image] =>[orig_patent_app_number] => 342607
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/342607 | Semiconductor photonic device having a ZnO film as a buffer layer and method for forming the ZnO film | Jun 28, 1999 | Issued |
Array
(
[id] => 4258160
[patent_doc_number] => 06258619
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[patent_kind] => NA
[patent_issue_date] => 2001-07-10
[patent_title] => 'Fabrication of semiconductor light emitting device'
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[firstpage_image] =>[orig_patent_app_number] => 337396
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/337396 | Fabrication of semiconductor light emitting device | Jun 21, 1999 | Issued |
Array
(
[id] => 4336077
[patent_doc_number] => 06333214
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[patent_title] => 'Memory of multilevel quantum dot structure and method for fabricating the same'
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Array
(
[id] => 4114089
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[patent_issue_date] => 2000-04-04
[patent_title] => 'Plug or via formation using novel slurries for chemical mechanical polishing'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/330236 | Plug or via formation using novel slurries for chemical mechanical polishing | Jun 9, 1999 | Issued |
Array
(
[id] => 4408448
[patent_doc_number] => 06265289
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[patent_kind] => NA
[patent_issue_date] => 2001-07-24
[patent_title] => 'Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby'
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[patent_app_number] => 9/327136
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Array
(
[id] => 4235574
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Array
(
[id] => 4381312
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[patent_title] => 'Production method for silicon epitaxial wafer'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/321567 | Production method for silicon epitaxial wafer | May 27, 1999 | Issued |
Array
(
[id] => 4182476
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/308985 | Process for producing micromechanical sensors | May 26, 1999 | Issued |
Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/320866 | Method of formation of buried mirror semiconductive device | May 26, 1999 | Issued |
Array
(
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[firstpage_image] =>[orig_patent_app_number] => 317133
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/317133 | Fabrication of thin film transistor-liquid crystal display with self-aligned transparent conducting layers | May 23, 1999 | Issued |