![](/images/general/no_picture/200_user.png)
Christine Trinh Le Tu
Examiner (ID: 6386, Phone: (571)272-3831 , Office: P/2117 )
Most Active Art Unit | 2117 |
Art Unit(s) | 2133, 2117, 2111, 2313, 2784, 2785, 2138, 2413 |
Total Applications | 1773 |
Issued Applications | 1557 |
Pending Applications | 64 |
Abandoned Applications | 152 |
Applications
Application number | Title of the application | Filing Date | Status |
---|---|---|---|
Array
(
[id] => 4382156
[patent_doc_number] => 06261971
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Array
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[patent_issue_date] => 2001-05-22
[patent_title] => 'Methods of crystallizing amorphous silicon layer and fabricating thin film transistor using the same'
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Array
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[patent_issue_date] => 2002-01-08
[patent_title] => 'Polishing cloth and method of manufacturing semiconductor device using the same'
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Array
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[patent_issue_date] => 2001-02-13
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Array
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Array
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Array
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[patent_title] => 'Stable high voltage semiconductor device structure'
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Array
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[patent_issue_date] => 2001-04-17
[patent_title] => 'Method of manufacturing semiconductor device having shallow junction'
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[patent_app_number] => 9/261223
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/261223 | Method of manufacturing semiconductor device having shallow junction | Mar 2, 1999 | Issued |
Array
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[patent_issue_date] => 2001-08-14
[patent_title] => 'Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layer'
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[patent_app_number] => 9/256781
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/256781 | Method of forming junction-leakage free metal silicide in a semiconductor wafer by amorphization of refractory metal layer | Feb 23, 1999 | Issued |
Array
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[patent_issue_date] => 2001-06-12
[patent_title] => 'Method for forming a retrograde impurity profile'
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Array
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Array
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[id] => 4286394
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Array
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Array
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Array
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Array
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Array
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Array
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Array
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