
Christopher Veraa
Examiner (ID: 16821, Phone: (571)272-2329 , Office: P/3638 )
| Most Active Art Unit | 3636 |
| Art Unit(s) | 3638, 3611, 3636 |
| Total Applications | 954 |
| Issued Applications | 418 |
| Pending Applications | 29 |
| Abandoned Applications | 518 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 6983404
[patent_doc_number] => 20050153474
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2005-07-14
[patent_title] => 'Vertical optical path structure for infrared photodetection'
[patent_app_type] => utility
[patent_app_number] => 10/755567
[patent_app_country] => US
[patent_app_date] => 2004-01-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 11
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[patent_no_of_words] => 4097
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[pdf_file] => publications/A1/0153/20050153474.pdf
[firstpage_image] =>[orig_patent_app_number] => 10755567
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/755567 | Vertical optical path structure for infrared photodetection | Jan 11, 2004 | Issued |
Array
(
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[patent_doc_number] => 20040140496
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[patent_kind] => A1
[patent_issue_date] => 2004-07-22
[patent_title] => 'Bitline structure for DRAM and method of forming the same'
[patent_app_type] => new
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[firstpage_image] =>[orig_patent_app_number] => 10752961
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/752961 | Bitline structure for DRAM and method of forming the same | Jan 6, 2004 | Issued |
Array
(
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[patent_doc_number] => 20040150038
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[patent_issue_date] => 2004-08-05
[patent_title] => 'Trench MOSFET having low gate charge'
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[patent_app_number] => 10/751687
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/751687 | Trench MOSFET having low gate charge | Jan 4, 2004 | Issued |
Array
(
[id] => 7304871
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[patent_country] => US
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[patent_issue_date] => 2004-07-22
[patent_title] => 'Enhanced T-gate structure for modulation doped field effect transistors'
[patent_app_type] => new
[patent_app_number] => 10/750697
[patent_app_country] => US
[patent_app_date] => 2004-01-02
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[patent_drawing_sheets_cnt] => 6
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Array
(
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[patent_title] => 'MOS device and a process for manufacturing MOS devices using a dual-polysilicon layer technology with side contact'
[patent_app_type] => utility
[patent_app_number] => 10/745297
[patent_app_country] => US
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[pdf_file] => patents/07/091/07091570.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/745297 | MOS device and a process for manufacturing MOS devices using a dual-polysilicon layer technology with side contact | Dec 22, 2003 | Issued |
Array
(
[id] => 6970672
[patent_doc_number] => 20050036382
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[patent_issue_date] => 2005-02-17
[patent_title] => 'Semiconductor memory element, semiconductor memory device and method of fabricating the same'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/735717 | Semiconductor memory element, semiconductor memory device and method of fabricating the same | Dec 15, 2003 | Issued |
Array
(
[id] => 5820578
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[patent_title] => 'Method of manufacture of a trench-gate semiconductor device'
[patent_app_type] => utility
[patent_app_number] => 10/538217
[patent_app_country] => US
[patent_app_date] => 2003-12-08
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[pdf_file] => publications/A1/0024/20060024891.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/538217 | Method of manufacture of a trench-gate semiconductor device | Dec 7, 2003 | Issued |
Array
(
[id] => 7626598
[patent_doc_number] => 06768164
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[patent_issue_date] => 2004-07-27
[patent_title] => 'Stacked gate flash memory device and method of fabricating the same'
[patent_app_type] => B2
[patent_app_number] => 10/725052
[patent_app_country] => US
[patent_app_date] => 2003-12-01
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[firstpage_image] =>[orig_patent_app_number] => 10725052
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/725052 | Stacked gate flash memory device and method of fabricating the same | Nov 30, 2003 | Issued |
Array
(
[id] => 7198671
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[patent_title] => 'Avalanche photo-detector with high saturation power and high gain-bandwidth product'
[patent_app_type] => utility
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/720117 | Avalanche photo-detector with high saturation power and high gain-bandwidth product | Nov 24, 2003 | Issued |
Array
(
[id] => 6936497
[patent_doc_number] => 20050110058
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[patent_issue_date] => 2005-05-26
[patent_title] => 'Method and structure for reducing resistance of a semiconductor device feature'
[patent_app_type] => utility
[patent_app_number] => 10/719047
[patent_app_country] => US
[patent_app_date] => 2003-11-20
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/719047 | Method and structure for reducing resistance of a semiconductor device feature | Nov 19, 2003 | Issued |
Array
(
[id] => 7101347
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[patent_title] => 'Solid-state display with improved color-mixing'
[patent_app_type] => utility
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/715927 | Solid-state display with improved color-mixing | Nov 17, 2003 | Issued |
Array
(
[id] => 751895
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[patent_title] => 'Method of etching a lateral trench under a drain junction of a MOS transistor'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/716277 | Method of etching a lateral trench under a drain junction of a MOS transistor | Nov 16, 2003 | Issued |
Array
(
[id] => 7399923
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[patent_title] => 'Solid state imaging device with an output section having reduced power consumption, and manufacturing method thereof'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/713487 | Solid state imaging device with an output section having reduced power consumption, and manufacturing method thereof | Nov 13, 2003 | Abandoned |
Array
(
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[patent_title] => 'FinFET SRAM cell with chevron FinFET logic'
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Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/699127 | Semiconductor optical device having current-confined structure | Oct 29, 2003 | Issued |
Array
(
[id] => 979356
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/698167 | Calcium doped polysilicon gate electrodes | Oct 29, 2003 | Issued |
Array
(
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Array
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Array
(
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Array
(
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[patent_title] => 'Process for integration of a high dielectric constant gate insulator layer in a CMOS device'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/696007 | Process for integration of a high dielectric constant gate insulator layer in a CMOS device | Oct 28, 2003 | Issued |