Darrell G Dayoan
Examiner (ID: 10437)
Most Active Art Unit | 3101 |
Art Unit(s) | 3107, 3101, 3612, 3615, 2899 |
Total Applications | 1472 |
Issued Applications | 1258 |
Pending Applications | 45 |
Abandoned Applications | 164 |
Applications
Application number | Title of the application | Filing Date | Status |
---|---|---|---|
Array
(
[id] => 315147
[patent_doc_number] => 07525117
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2009-04-28
[patent_title] => 'Chalcogenide devices and materials having reduced germanium or telluruim content'
[patent_app_type] => utility
[patent_app_number] => 11/301211
[patent_app_country] => US
[patent_app_date] => 2005-12-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/07/525/07525117.pdf
[firstpage_image] =>[orig_patent_app_number] => 11301211
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/301211 | Chalcogenide devices and materials having reduced germanium or telluruim content | Dec 11, 2005 | Issued |
Array
(
[id] => 4557292
[patent_doc_number] => 07820996
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2010-10-26
[patent_title] => 'Nonvolatile memory device made of resistance material and method of fabricating the same'
[patent_app_type] => utility
[patent_app_number] => 11/295551
[patent_app_country] => US
[patent_app_date] => 2005-12-07
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[pdf_file] => patents/07/820/07820996.pdf
[firstpage_image] =>[orig_patent_app_number] => 11295551
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/295551 | Nonvolatile memory device made of resistance material and method of fabricating the same | Dec 6, 2005 | Issued |
Array
(
[id] => 4975
[patent_doc_number] => 07816659
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2010-10-19
[patent_title] => 'Devices having reversible resistivity-switching metal oxide or nitride layer with added metal'
[patent_app_type] => utility
[patent_app_number] => 11/287452
[patent_app_country] => US
[patent_app_date] => 2005-11-23
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/287452 | Devices having reversible resistivity-switching metal oxide or nitride layer with added metal | Nov 22, 2005 | Issued |
Array
(
[id] => 5233844
[patent_doc_number] => 20070125999
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2007-06-07
[patent_title] => 'Configurable power segmentation using a nanotube structure'
[patent_app_type] => utility
[patent_app_number] => 11/286558
[patent_app_country] => US
[patent_app_date] => 2005-11-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 11
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[firstpage_image] =>[orig_patent_app_number] => 11286558
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/286558 | Configurable power segmentation using a nanotube structure | Nov 22, 2005 | Issued |
Array
(
[id] => 5092956
[patent_doc_number] => 20070114565
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2007-05-24
[patent_title] => 'Integrated field-effect transistor-thyristor device'
[patent_app_type] => utility
[patent_app_number] => 11/285801
[patent_app_country] => US
[patent_app_date] => 2005-11-23
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[pdf_file] => publications/A1/0114/20070114565.pdf
[firstpage_image] =>[orig_patent_app_number] => 11285801
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/285801 | Integrated field-effect transistor-thyristor device | Nov 22, 2005 | Abandoned |
Array
(
[id] => 5776916
[patent_doc_number] => 20060105556
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2006-05-18
[patent_title] => 'Semiconductor device and method of manufacturing the same'
[patent_app_type] => utility
[patent_app_number] => 11/272811
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[firstpage_image] =>[orig_patent_app_number] => 11272811
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/272811 | Semiconductor and semiconductor manufacturing arrangements having a chalcogenide layer formed of columnar crystal grains perpendicular to a main substrate surface | Nov 14, 2005 | Issued |
Array
(
[id] => 34455
[patent_doc_number] => 07786459
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[patent_issue_date] => 2010-08-31
[patent_title] => 'Memory element and memory device comprising memory layer positioned between first and second electrodes'
[patent_app_type] => utility
[patent_app_number] => 11/280561
[patent_app_country] => US
[patent_app_date] => 2005-11-15
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[pdf_file] => patents/07/786/07786459.pdf
[firstpage_image] =>[orig_patent_app_number] => 11280561
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/280561 | Memory element and memory device comprising memory layer positioned between first and second electrodes | Nov 14, 2005 | Issued |
Array
(
[id] => 5622874
[patent_doc_number] => 20060261379
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[patent_kind] => A1
[patent_issue_date] => 2006-11-23
[patent_title] => 'Phase change memory and manufacturing method thereof'
[patent_app_type] => utility
[patent_app_number] => 11/272751
[patent_app_country] => US
[patent_app_date] => 2005-11-15
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[firstpage_image] =>[orig_patent_app_number] => 11272751
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/272751 | Phase change memory and manufacturing method thereof | Nov 14, 2005 | Abandoned |
Array
(
[id] => 307751
[patent_doc_number] => 07531824
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2009-05-12
[patent_title] => 'High value inductor with conductor surrounded by high permeability polymer formed on a semiconductor substrate'
[patent_app_type] => utility
[patent_app_number] => 11/274932
[patent_app_country] => US
[patent_app_date] => 2005-11-14
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/274932 | High value inductor with conductor surrounded by high permeability polymer formed on a semiconductor substrate | Nov 13, 2005 | Issued |
Array
(
[id] => 5647442
[patent_doc_number] => 20060133174
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[patent_kind] => A1
[patent_issue_date] => 2006-06-22
[patent_title] => 'Phase-change RAM containing AIN thermal dissipation layer and TiN electrode'
[patent_app_type] => utility
[patent_app_number] => 11/270711
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[patent_app_date] => 2005-11-08
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/270711 | Phase-change RAM containing AIN thermal dissipation layer and TiN electrode | Nov 7, 2005 | Issued |
Array
(
[id] => 296335
[patent_doc_number] => 07541607
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[patent_issue_date] => 2009-06-02
[patent_title] => 'Electrically rewritable non-volatile memory element and method of manufacturing the same'
[patent_app_type] => utility
[patent_app_number] => 11/264091
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[pdf_file] => patents/07/541/07541607.pdf
[firstpage_image] =>[orig_patent_app_number] => 11264091
[rel_patent_id] =>[rel_patent_doc_number] =>) 11/264091 | Electrically rewritable non-volatile memory element and method of manufacturing the same | Nov 1, 2005 | Issued |
Array
(
[id] => 5031623
[patent_doc_number] => 20070096162
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[patent_title] => 'Phase change memory having multilayer thermal insulation'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/265372 | Phase change memory having multilayer thermal insulation | Nov 1, 2005 | Issued |
Array
(
[id] => 5671381
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[patent_title] => 'Magnetic tunnel junction device and method of manufacturing the same'
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Array
(
[id] => 303968
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[patent_kind] => B2
[patent_issue_date] => 2009-05-19
[patent_title] => 'Electronic component including reinforcing member'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/247611 | Electronic component including reinforcing member | Oct 9, 2005 | Issued |
Array
(
[id] => 5745769
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/247610 | Electronic part having reinforcing member | Oct 9, 2005 | Issued |
Array
(
[id] => 915250
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[patent_title] => 'Chalcogenide random access memory'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/163062 | Chalcogenide random access memory | Oct 3, 2005 | Issued |
Array
(
[id] => 5247483
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Array
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Array
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Array
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/237891 | Nonvolatile nanochannel memory device using mesoporous material | Sep 28, 2005 | Issued |