| Application number | Title of the application | Filing Date | Status |
|---|
Array
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[patent_kind] => NA
[patent_issue_date] => 2000-07-18
[patent_title] => 'High voltage mos device having an extended drain region with different dopant species'
[patent_app_type] => 1
[patent_app_number] => 8/715711
[patent_app_country] => US
[patent_app_date] => 1996-09-19
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[firstpage_image] =>[orig_patent_app_number] => 715711
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Array
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[patent_doc_number] => 05994752
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[patent_kind] => NA
[patent_issue_date] => 1999-11-30
[patent_title] => 'Field-effect-controllable semiconductor component with a plurality of temperature sensors'
[patent_app_type] => 1
[patent_app_number] => 8/715426
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[patent_app_date] => 1996-09-18
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[firstpage_image] =>[orig_patent_app_number] => 715426
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/715426 | Field-effect-controllable semiconductor component with a plurality of temperature sensors | Sep 17, 1996 | Issued |
Array
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[id] => 3908865
[patent_doc_number] => 05898187
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-04-27
[patent_title] => 'Thin film transistor'
[patent_app_type] => 1
[patent_app_number] => 8/713074
[patent_app_country] => US
[patent_app_date] => 1996-09-12
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[firstpage_image] =>[orig_patent_app_number] => 713074
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/713074 | Thin film transistor | Sep 11, 1996 | Issued |
Array
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[id] => 4197224
[patent_doc_number] => 06043519
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-03-28
[patent_title] => 'Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication'
[patent_app_type] => 1
[patent_app_number] => 8/712824
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[patent_app_date] => 1996-09-12
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[firstpage_image] =>[orig_patent_app_number] => 712824
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/712824 | Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication | Sep 11, 1996 | Issued |
Array
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[id] => 3913978
[patent_doc_number] => 05835986
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-11-10
[patent_title] => 'Electrostatic discharge (ESD) structure and buffer driver structure for providing ESD and latchup protection for integrated circuit structures in minimized I/O space'
[patent_app_type] => 1
[patent_app_number] => 8/708258
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[patent_app_date] => 1996-09-06
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[firstpage_image] =>[orig_patent_app_number] => 708258
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/708258 | Electrostatic discharge (ESD) structure and buffer driver structure for providing ESD and latchup protection for integrated circuit structures in minimized I/O space | Sep 5, 1996 | Issued |
| 08/707036 | CONDUCTIVE SPACER LIGHTLY DOPED DRAIN (LDD) FOR HOT CARRIER EFFECT (HCE) CONTROL | Sep 2, 1996 | Abandoned |
Array
(
[id] => 3903971
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[patent_issue_date] => 1998-05-12
[patent_title] => 'Zener diodes on the same wafer with BiCDMOS structures'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/705910 | Zener diodes on the same wafer with BiCDMOS structures | Aug 28, 1996 | Issued |
Array
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[id] => 3788582
[patent_doc_number] => 05821600
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[patent_kind] => NA
[patent_issue_date] => 1998-10-13
[patent_title] => 'Isolation by active transistors with grounded gates'
[patent_app_type] => 1
[patent_app_number] => 8/704153
[patent_app_country] => US
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[firstpage_image] =>[orig_patent_app_number] => 704153
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/704153 | Isolation by active transistors with grounded gates | Aug 27, 1996 | Issued |
Array
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[id] => 4055959
[patent_doc_number] => 05969385
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-10-19
[patent_title] => 'Ultra-low power-delay product NNN/PPP logic devices'
[patent_app_type] => 1
[patent_app_number] => 8/689946
[patent_app_country] => US
[patent_app_date] => 1996-08-16
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/689946 | Ultra-low power-delay product NNN/PPP logic devices | Aug 15, 1996 | Issued |
Array
(
[id] => 4242717
[patent_doc_number] => 06144078
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-11-07
[patent_title] => 'Methods for programming read-only memory cells and associated memories'
[patent_app_type] => 1
[patent_app_number] => 8/688298
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[firstpage_image] =>[orig_patent_app_number] => 688298
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/688298 | Methods for programming read-only memory cells and associated memories | Jul 29, 1996 | Issued |
Array
(
[id] => 3932781
[patent_doc_number] => 05877512
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-03-02
[patent_title] => 'Liquid crystal display device having uniform parasitic capacitance between pixels'
[patent_app_type] => 1
[patent_app_number] => 8/686952
[patent_app_country] => US
[patent_app_date] => 1996-07-26
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/686952 | Liquid crystal display device having uniform parasitic capacitance between pixels | Jul 25, 1996 | Issued |
| 08/681038 | BONDED WAFER PROCESSING WITH METAL SILICIDATION | Jul 21, 1996 | Abandoned |
Array
(
[id] => 1568422
[patent_doc_number] => 06376891
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[patent_kind] => B1
[patent_issue_date] => 2002-04-23
[patent_title] => 'High voltage breakdown isolation semiconductor device and manufacturing process for making the device'
[patent_app_type] => B1
[patent_app_number] => 08/684558
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[patent_app_date] => 1996-07-19
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Array
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Array
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