| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 3938876
[patent_doc_number] => 05939755
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-08-17
[patent_title] => 'Power IC having high-side and low-side switches in an SOI structure'
[patent_app_type] => 1
[patent_app_number] => 8/655600
[patent_app_country] => US
[patent_app_date] => 1996-05-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 9
[patent_figures_cnt] => 21
[patent_no_of_words] => 9342
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/939/05939755.pdf
[firstpage_image] =>[orig_patent_app_number] => 655600
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/655600 | Power IC having high-side and low-side switches in an SOI structure | May 29, 1996 | Issued |
| 08/654573 | JUNCTION WITH VARIABLE PROFILE GRADATION OF DOPANT AND METHOD FOR FORMING SAME | May 28, 1996 | Abandoned |
Array
(
[id] => 3740917
[patent_doc_number] => 05698883
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-12-16
[patent_title] => 'MOS field effect transistor and method for manufacturing the same'
[patent_app_type] => 1
[patent_app_number] => 8/654754
[patent_app_country] => US
[patent_app_date] => 1996-05-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 10
[patent_no_of_words] => 3545
[patent_no_of_claims] => 3
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[patent_words_short_claim] => 151
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/698/05698883.pdf
[firstpage_image] =>[orig_patent_app_number] => 654754
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/654754 | MOS field effect transistor and method for manufacturing the same | May 27, 1996 | Issued |
Array
(
[id] => 3857590
[patent_doc_number] => 05767557
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-16
[patent_title] => 'PMOSFETS having indium or gallium doped buried channels and n+polysilicon gates and CMOS devices fabricated therefrom'
[patent_app_type] => 1
[patent_app_number] => 8/656996
[patent_app_country] => US
[patent_app_date] => 1996-05-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 10
[patent_no_of_words] => 2755
[patent_no_of_claims] => 18
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 132
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/767/05767557.pdf
[firstpage_image] =>[orig_patent_app_number] => 656996
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/656996 | PMOSFETS having indium or gallium doped buried channels and n+polysilicon gates and CMOS devices fabricated therefrom | May 23, 1996 | Issued |
| 08/645695 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME | May 13, 1996 | Abandoned |
Array
(
[id] => 4003172
[patent_doc_number] => 05986340
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-11-16
[patent_title] => 'Ball grid array package with enhanced thermal and electrical characteristics and electronic device incorporating same'
[patent_app_type] => 1
[patent_app_number] => 8/641933
[patent_app_country] => US
[patent_app_date] => 1996-05-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 11
[patent_no_of_words] => 3588
[patent_no_of_claims] => 9
[patent_no_of_ind_claims] => 4
[patent_words_short_claim] => 224
[patent_maintenance] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/986/05986340.pdf
[firstpage_image] =>[orig_patent_app_number] => 641933
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/641933 | Ball grid array package with enhanced thermal and electrical characteristics and electronic device incorporating same | May 1, 1996 | Issued |
Array
(
[id] => 3885541
[patent_doc_number] => 05798549
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-08-25
[patent_title] => 'Conductive layer overlaid self-aligned MOS-gated semiconductor devices'
[patent_app_type] => 1
[patent_app_number] => 8/649956
[patent_app_country] => US
[patent_app_date] => 1996-05-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 14
[patent_figures_cnt] => 46
[patent_no_of_words] => 5930
[patent_no_of_claims] => 4
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/798/05798549.pdf
[firstpage_image] =>[orig_patent_app_number] => 649956
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/649956 | Conductive layer overlaid self-aligned MOS-gated semiconductor devices | Apr 30, 1996 | Issued |
Array
(
[id] => 3766570
[patent_doc_number] => 05852314
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-12-22
[patent_title] => 'Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground'
[patent_app_type] => 1
[patent_app_number] => 8/643152
[patent_app_country] => US
[patent_app_date] => 1996-04-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/852/05852314.pdf
[firstpage_image] =>[orig_patent_app_number] => 643152
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/643152 | Thin epitaxy resurf integrated circuit containing high voltage p-channel and n-channel devices with source or drain not tied to ground | Apr 29, 1996 | Issued |
Array
(
[id] => 3633230
[patent_doc_number] => 05686750
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-11-11
[patent_title] => 'Power semiconductor device having improved reverse recovery voltage'
[patent_app_type] => 1
[patent_app_number] => 8/639433
[patent_app_country] => US
[patent_app_date] => 1996-04-29
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 6
[patent_no_of_words] => 3204
[patent_no_of_claims] => 2
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 570
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/686/05686750.pdf
[firstpage_image] =>[orig_patent_app_number] => 639433
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/639433 | Power semiconductor device having improved reverse recovery voltage | Apr 28, 1996 | Issued |
| 08/638606 | NOVEL MOSFET TERMINATION DESIGN AND CORE CELL CONFIGURATION TO INCREASE BREAKDOWN VOLTAGE AND TO IMPROVE DEVICE RUGGEDNESS | Apr 25, 1996 | Abandoned |
| 08/638504 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING THE SAME | Apr 25, 1996 | Abandoned |
Array
(
[id] => 3776030
[patent_doc_number] => 05773871
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-30
[patent_title] => 'Integrated circuit structure and method of fabrication thereof'
[patent_app_type] => 1
[patent_app_number] => 8/638084
[patent_app_country] => US
[patent_app_date] => 1996-04-25
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
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[patent_no_of_words] => 6060
[patent_no_of_claims] => 3
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/773/05773871.pdf
[firstpage_image] =>[orig_patent_app_number] => 638084
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/638084 | Integrated circuit structure and method of fabrication thereof | Apr 24, 1996 | Issued |
Array
(
[id] => 3861987
[patent_doc_number] => 05705840
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-01-06
[patent_title] => 'Field effect transistor with recessed buried source and drain regions'
[patent_app_type] => 1
[patent_app_number] => 8/636785
[patent_app_country] => US
[patent_app_date] => 1996-04-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
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[patent_no_of_words] => 3161
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/705/05705840.pdf
[firstpage_image] =>[orig_patent_app_number] => 636785
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/636785 | Field effect transistor with recessed buried source and drain regions | Apr 22, 1996 | Issued |
Array
(
[id] => 4361128
[patent_doc_number] => 06201281
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-03-13
[patent_title] => 'Semiconductor device and method for producing the same'
[patent_app_type] => 1
[patent_app_number] => 8/635283
[patent_app_country] => US
[patent_app_date] => 1996-04-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/201/06201281.pdf
[firstpage_image] =>[orig_patent_app_number] => 635283
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/635283 | Semiconductor device and method for producing the same | Apr 18, 1996 | Issued |
Array
(
[id] => 4067700
[patent_doc_number] => 05895951
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-04-20
[patent_title] => 'MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches'
[patent_app_type] => 1
[patent_app_number] => 8/628493
[patent_app_country] => US
[patent_app_date] => 1996-04-05
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 14
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[pdf_file] => patents/05/895/05895951.pdf
[firstpage_image] =>[orig_patent_app_number] => 628493
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/628493 | MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches | Apr 4, 1996 | Issued |
Array
(
[id] => 3820565
[patent_doc_number] => 05789783
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-08-04
[patent_title] => 'Multilevel metallization structure for integrated circuit I/O lines for increased current capacity and ESD protection'
[patent_app_type] => 1
[patent_app_number] => 8/626776
[patent_app_country] => US
[patent_app_date] => 1996-04-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[pdf_file] => patents/05/789/05789783.pdf
[firstpage_image] =>[orig_patent_app_number] => 626776
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/626776 | Multilevel metallization structure for integrated circuit I/O lines for increased current capacity and ESD protection | Apr 1, 1996 | Issued |
Array
(
[id] => 3892156
[patent_doc_number] => 05894153
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-04-13
[patent_title] => 'Field implant for silicon controlled rectifier'
[patent_app_type] => 1
[patent_app_number] => 8/625986
[patent_app_country] => US
[patent_app_date] => 1996-04-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 19
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/894/05894153.pdf
[firstpage_image] =>[orig_patent_app_number] => 625986
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/625986 | Field implant for silicon controlled rectifier | Mar 31, 1996 | Issued |
| 08/617730 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF | Mar 31, 1996 | Abandoned |
Array
(
[id] => 3857436
[patent_doc_number] => 05767548
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-16
[patent_title] => 'Semiconductor component with embedded fixed charges to provide increased high breakdown voltage'
[patent_app_type] => 1
[patent_app_number] => 8/619614
[patent_app_country] => US
[patent_app_date] => 1996-03-29
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/767/05767548.pdf
[firstpage_image] =>[orig_patent_app_number] => 619614
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/619614 | Semiconductor component with embedded fixed charges to provide increased high breakdown voltage | Mar 28, 1996 | Issued |
Array
(
[id] => 3857148
[patent_doc_number] => 05767529
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-16
[patent_title] => 'Thin-film transistor having a plurality of island-like regions'
[patent_app_type] => 1
[patent_app_number] => 8/623506
[patent_app_country] => US
[patent_app_date] => 1996-03-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/767/05767529.pdf
[firstpage_image] =>[orig_patent_app_number] => 623506
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/623506 | Thin-film transistor having a plurality of island-like regions | Mar 27, 1996 | Issued |