| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 3579475
[patent_doc_number] => 05523588
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-06-04
[patent_title] => 'Diamond film field effect transistor with self aligned source and drain regions'
[patent_app_type] => 1
[patent_app_number] => 8/269896
[patent_app_country] => US
[patent_app_date] => 1994-07-06
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[pdf_file] => patents/05/523/05523588.pdf
[firstpage_image] =>[orig_patent_app_number] => 269896
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/269896 | Diamond film field effect transistor with self aligned source and drain regions | Jul 5, 1994 | Issued |
Array
(
[id] => 3457173
[patent_doc_number] => 05451805
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-09-19
[patent_title] => 'VDMOS transistor with reduced projective area of source region'
[patent_app_type] => 1
[patent_app_number] => 8/269537
[patent_app_country] => US
[patent_app_date] => 1994-07-01
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/451/05451805.pdf
[firstpage_image] =>[orig_patent_app_number] => 269537
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/269537 | VDMOS transistor with reduced projective area of source region | Jun 30, 1994 | Issued |
Array
(
[id] => 3432120
[patent_doc_number] => 05455449
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-10-03
[patent_title] => 'Offset lattice bipolar transistor architecture'
[patent_app_type] => 1
[patent_app_number] => 8/268802
[patent_app_country] => US
[patent_app_date] => 1994-06-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[pdf_file] => patents/05/455/05455449.pdf
[firstpage_image] =>[orig_patent_app_number] => 268802
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/268802 | Offset lattice bipolar transistor architecture | Jun 29, 1994 | Issued |
Array
(
[id] => 3553599
[patent_doc_number] => 05548152
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-08-20
[patent_title] => 'Semiconductor device with parallel-connected diodes'
[patent_app_type] => 1
[patent_app_number] => 8/260832
[patent_app_country] => US
[patent_app_date] => 1994-06-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/05/548/05548152.pdf
[firstpage_image] =>[orig_patent_app_number] => 260832
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/260832 | Semiconductor device with parallel-connected diodes | Jun 15, 1994 | Issued |
Array
(
[id] => 3593023
[patent_doc_number] => 05497012
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-03-05
[patent_title] => 'Unipolar band minima devices'
[patent_app_type] => 1
[patent_app_number] => 8/259808
[patent_app_country] => US
[patent_app_date] => 1994-06-15
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[pdf_file] => patents/05/497/05497012.pdf
[firstpage_image] =>[orig_patent_app_number] => 259808
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/259808 | Unipolar band minima devices | Jun 14, 1994 | Issued |
Array
(
[id] => 3721374
[patent_doc_number] => 05616943
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-04-01
[patent_title] => 'Electrostatic discharge protection system for mixed voltage application specific integrated circuit design'
[patent_app_type] => 1
[patent_app_number] => 8/259240
[patent_app_country] => US
[patent_app_date] => 1994-06-13
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[firstpage_image] =>[orig_patent_app_number] => 259240
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/259240 | Electrostatic discharge protection system for mixed voltage application specific integrated circuit design | Jun 12, 1994 | Issued |
Array
(
[id] => 3537991
[patent_doc_number] => 05557135
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-09-17
[patent_title] => 'Semiconductor device with field shield isolation structure and a method of manufacturing the same'
[patent_app_type] => 1
[patent_app_number] => 8/259158
[patent_app_country] => US
[patent_app_date] => 1994-06-13
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/557/05557135.pdf
[firstpage_image] =>[orig_patent_app_number] => 259158
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/259158 | Semiconductor device with field shield isolation structure and a method of manufacturing the same | Jun 12, 1994 | Issued |
Array
(
[id] => 4027052
[patent_doc_number] => 05925915
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-07-20
[patent_title] => 'Semiconductor on insulator devices'
[patent_app_type] => 1
[patent_app_number] => 8/251011
[patent_app_country] => US
[patent_app_date] => 1994-05-31
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
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[pdf_file] => patents/05/925/05925915.pdf
[firstpage_image] =>[orig_patent_app_number] => 251011
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/251011 | Semiconductor on insulator devices | May 30, 1994 | Issued |
Array
(
[id] => 1136377
[patent_doc_number] => 06784492
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2004-08-31
[patent_title] => 'Semiconductor device including a gate-insulated transistor'
[patent_app_type] => B1
[patent_app_number] => 08/250942
[patent_app_country] => US
[patent_app_date] => 1994-05-31
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/784/06784492.pdf
[firstpage_image] =>[orig_patent_app_number] => 08250942
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/250942 | Semiconductor device including a gate-insulated transistor | May 30, 1994 | Issued |
| 08/250906 | MOSFET SYSTEMS AND FABRICATION PROCEDURE | May 30, 1994 | Abandoned |
Array
(
[id] => 3694076
[patent_doc_number] => 05604360
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-02-18
[patent_title] => 'Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor'
[patent_app_type] => 1
[patent_app_number] => 8/248220
[patent_app_country] => US
[patent_app_date] => 1994-05-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
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[pdf_file] => patents/05/604/05604360.pdf
[firstpage_image] =>[orig_patent_app_number] => 248220
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/248220 | Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor | May 23, 1994 | Issued |
| 08/242436 | GATE RESISTOR FOR IGBT | May 12, 1994 | Abandoned |
| 08/238084 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | May 3, 1994 | Abandoned |
Array
(
[id] => 3427549
[patent_doc_number] => 05459349
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-10-17
[patent_title] => 'Semiconductor device with reduced noise propagation between circuit blocks'
[patent_app_type] => 1
[patent_app_number] => 8/237394
[patent_app_country] => US
[patent_app_date] => 1994-05-03
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/05/459/05459349.pdf
[firstpage_image] =>[orig_patent_app_number] => 237394
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/237394 | Semiconductor device with reduced noise propagation between circuit blocks | May 2, 1994 | Issued |
Array
(
[id] => 3595960
[patent_doc_number] => 05521414
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-05-28
[patent_title] => 'Monolithic integrated structure to protect a power transistor against overvoltage'
[patent_app_type] => 1
[patent_app_number] => 8/234334
[patent_app_country] => US
[patent_app_date] => 1994-04-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[pdf_file] => patents/05/521/05521414.pdf
[firstpage_image] =>[orig_patent_app_number] => 234334
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/234334 | Monolithic integrated structure to protect a power transistor against overvoltage | Apr 27, 1994 | Issued |
Array
(
[id] => 3629739
[patent_doc_number] => 05621226
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-04-15
[patent_title] => 'Metal-insulator semiconductor gate controlled thyristor'
[patent_app_type] => 1
[patent_app_number] => 8/233744
[patent_app_country] => US
[patent_app_date] => 1994-04-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 22
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[pdf_file] => patents/05/621/05621226.pdf
[firstpage_image] =>[orig_patent_app_number] => 233744
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/233744 | Metal-insulator semiconductor gate controlled thyristor | Apr 25, 1994 | Issued |
Array
(
[id] => 3551541
[patent_doc_number] => 05545905
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-08-13
[patent_title] => 'Static induction semiconductor device with a static induction schottky shorted structure'
[patent_app_type] => 1
[patent_app_number] => 8/229328
[patent_app_country] => US
[patent_app_date] => 1994-04-18
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 28
[patent_figures_cnt] => 44
[patent_no_of_words] => 12962
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/545/05545905.pdf
[firstpage_image] =>[orig_patent_app_number] => 229328
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/229328 | Static induction semiconductor device with a static induction schottky shorted structure | Apr 17, 1994 | Issued |
| 08/225168 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | Apr 7, 1994 | Abandoned |
Array
(
[id] => 3498446
[patent_doc_number] => 05508536
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-04-16
[patent_title] => 'Heterojunction bipolar transistor having low electron and hole concentrations in the emitter-base junction region'
[patent_app_type] => 1
[patent_app_number] => 8/224650
[patent_app_country] => US
[patent_app_date] => 1994-04-07
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[pdf_file] => patents/05/508/05508536.pdf
[firstpage_image] =>[orig_patent_app_number] => 224650
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/224650 | Heterojunction bipolar transistor having low electron and hole concentrations in the emitter-base junction region | Apr 6, 1994 | Issued |
| 08/225446 | POWER SEMICONDUCTOR COMPONENT | Apr 6, 1994 | Abandoned |