| Application number | Title of the application | Filing Date | Status |
|---|
| 07/951758 | AN INSULATED-GATE-TYPE FIELD EFFECT TRANSISTOR WHICH HAS SUBGATES THAT HAVE DIFFERENT SPACING FROM THE SUBSTRATE THAN THE MAIN GATE | Sep 27, 1992 | Abandoned |
| 07/952292 | POWER SEMICONDUCTOR DEVICE HAVING IMPROVED REVERSE RECOVERY VOLTAGE | Sep 27, 1992 | Abandoned |
| 07/948622 | CONTACT STRUCTURE FOR CONNECTING AN ELECTRODE TO A SEMICONDUCTOR AND A METHOD OF FORMING THE SAME | Sep 21, 1992 | Abandoned |
Array
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[patent_issue_date] => 1994-05-24
[patent_title] => 'Reduction of bipolar gain and improvement in snap-back sustaining voltage in SOI field effect transistor'
[patent_app_type] => 1
[patent_app_number] => 7/947177
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[patent_app_date] => 1992-09-18
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Array
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[patent_doc_number] => 05272373
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[patent_kind] => NA
[patent_issue_date] => 1993-12-21
[patent_title] => 'Internal gettering of oxygen in III-V compound semiconductors'
[patent_app_type] => 1
[patent_app_number] => 7/945858
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[patent_app_date] => 1992-09-16
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[firstpage_image] =>[orig_patent_app_number] => 945858
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/945858 | Internal gettering of oxygen in III-V compound semiconductors | Sep 15, 1992 | Issued |
Array
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[patent_kind] => NA
[patent_issue_date] => 1994-06-07
[patent_title] => 'Semiconductor device with MISFET-controlled thyristor'
[patent_app_type] => 1
[patent_app_number] => 7/944220
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[patent_app_date] => 1992-09-14
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[firstpage_image] =>[orig_patent_app_number] => 944220
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/944220 | Semiconductor device with MISFET-controlled thyristor | Sep 13, 1992 | Issued |
Array
(
[id] => 2966903
[patent_doc_number] => 05274261
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-12-28
[patent_title] => 'Integrated circuit degradation resistant structure'
[patent_app_type] => 1
[patent_app_number] => 7/943102
[patent_app_country] => US
[patent_app_date] => 1992-09-10
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[firstpage_image] =>[orig_patent_app_number] => 943102
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/943102 | Integrated circuit degradation resistant structure | Sep 9, 1992 | Issued |
Array
(
[id] => 3049768
[patent_doc_number] => 05334859
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-08-02
[patent_title] => 'Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film'
[patent_app_type] => 1
[patent_app_number] => 7/939458
[patent_app_country] => US
[patent_app_date] => 1992-09-02
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/939458 | Thin-film transistor having source and drain electrodes insulated by an anodically oxidized film | Sep 1, 1992 | Issued |
| 07/938196 | THIN FILM TRANSISTOR | Aug 30, 1992 | Abandoned |
Array
(
[id] => 3017112
[patent_doc_number] => 05308998
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[patent_kind] => NA
[patent_issue_date] => 1994-05-03
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Array
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[id] => 3014939
[patent_doc_number] => 05281841
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-01-25
[patent_title] => 'ESD protection element for CMOS integrated circuit'
[patent_app_type] => 1
[patent_app_number] => 7/933864
[patent_app_country] => US
[patent_app_date] => 1992-08-21
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[patent_drawing_sheets_cnt] => 3
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[pdf_file] => patents/05/281/05281841.pdf
[firstpage_image] =>[orig_patent_app_number] => 933864
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/933864 | ESD protection element for CMOS integrated circuit | Aug 20, 1992 | Issued |
Array
(
[id] => 2991476
[patent_doc_number] => 05212398
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1993-05-18
[patent_title] => 'BiMOS structure having a protective diode'
[patent_app_type] => 1
[patent_app_number] => 7/931510
[patent_app_country] => US
[patent_app_date] => 1992-08-21
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[patent_drawing_sheets_cnt] => 6
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[pdf_file] => patents/05/212/05212398.pdf
[firstpage_image] =>[orig_patent_app_number] => 931510
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/931510 | BiMOS structure having a protective diode | Aug 20, 1992 | Issued |
Array
(
[id] => 3014922
[patent_doc_number] => 05281840
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-01-25
[patent_title] => 'High mobility integrated drivers for active matrix displays'
[patent_app_type] => 1
[patent_app_number] => 7/931653
[patent_app_country] => US
[patent_app_date] => 1992-08-17
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 18
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[pdf_file] => patents/05/281/05281840.pdf
[firstpage_image] =>[orig_patent_app_number] => 931653
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/931653 | High mobility integrated drivers for active matrix displays | Aug 16, 1992 | Issued |
| 07/930872 | MOS DEVICE HAVING PROTECTION AGAINST ELECTROSTATIC DISCHARGE | Aug 13, 1992 | Abandoned |
| 07/929388 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME | Aug 13, 1992 | Abandoned |
Array
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[patent_doc_number] => 05391898
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[patent_kind] => NA
[patent_issue_date] => 1995-02-21
[patent_title] => 'Insulated gate bipolar transistor having high short-circuit and latch-up withstandability'
[patent_app_type] => 1
[patent_app_number] => 7/926378
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[firstpage_image] =>[orig_patent_app_number] => 926378
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Array
(
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[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-03-15
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[patent_app_type] => 1
[patent_app_number] => 7/922718
[patent_app_country] => US
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[firstpage_image] =>[orig_patent_app_number] => 922718
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Array
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[patent_kind] => NA
[patent_issue_date] => 1994-02-08
[patent_title] => 'Vertical insulated gate semiconductor device with less influence from the parasitic bipolar effect'
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[patent_app_date] => 1992-07-29
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Array
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[patent_kind] => NA
[patent_issue_date] => 1999-06-08
[patent_title] => 'Field effect Trench transistor having lightly doped epitaxial region on the surface portion thereof'
[patent_app_type] => 1
[patent_app_number] => 7/918954
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[patent_app_date] => 1992-07-24
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[firstpage_image] =>[orig_patent_app_number] => 918954
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Array
(
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[patent_kind] => NA
[patent_issue_date] => 1995-07-04
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[patent_app_type] => 1
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[pdf_file] => patents/05/430/05430324.pdf
[firstpage_image] =>[orig_patent_app_number] => 918996
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/918996 | High voltage transistor having edge termination utilizing trench technology | Jul 22, 1992 | Issued |