| Application number | Title of the application | Filing Date | Status |
|---|
| 07/581368 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE | Sep 11, 1990 | Abandoned |
Array
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[patent_issue_date] => 1992-02-18
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Array
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[patent_doc_number] => 05103282
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[patent_kind] => NA
[patent_issue_date] => 1992-04-07
[patent_title] => 'Semiconductor integrated circuit device having a gate array with a RAM and by-pass signal lines which interconnect a logic section and I/O unit circuit of the gate array'
[patent_app_type] => 1
[patent_app_number] => 7/579698
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Array
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[id] => 2876925
[patent_doc_number] => 05153695
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-10-06
[patent_title] => 'Semiconductor gate-controlled high-power capability bipolar device'
[patent_app_type] => 1
[patent_app_number] => 7/581071
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[patent_app_date] => 1990-09-10
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| 07/573758 | SEMICONDUCTOR DEVICE HAVING OVERLAPPING CONDUCTOR LAYERS AND METHOD OF PRODUCING THE SEMICONDUCTOR DEVICE | Aug 27, 1990 | Abandoned |
Array
(
[id] => 2879537
[patent_doc_number] => 05091766
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-02-25
[patent_title] => 'Thyristor with first and second independent control electrodes'
[patent_app_type] => 1
[patent_app_number] => 7/573776
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[patent_app_date] => 1990-08-28
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Array
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[patent_doc_number] => 05111261
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-05-05
[patent_title] => 'Silicon thin film transistor with an intrinsic silicon active layer formed within the boundary defined by the edges of the gate electrode and the impurity containing silicon layer'
[patent_app_type] => 1
[patent_app_number] => 7/564814
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Array
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[id] => 2856834
[patent_doc_number] => 05105247
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-04-14
[patent_title] => 'Quantum field effect device with source extension region formed under a gate and between the source and drain regions'
[patent_app_type] => 1
[patent_app_number] => 7/562470
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[firstpage_image] =>[orig_patent_app_number] => 562470
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/562470 | Quantum field effect device with source extension region formed under a gate and between the source and drain regions | Aug 2, 1990 | Issued |
Array
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[id] => 2788771
[patent_doc_number] => 05087964
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-02-11
[patent_title] => 'Package for a light-responsive semiconductor chip'
[patent_app_type] => 1
[patent_app_number] => 7/561578
[patent_app_country] => US
[patent_app_date] => 1990-08-02
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[firstpage_image] =>[orig_patent_app_number] => 561578
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/561578 | Package for a light-responsive semiconductor chip | Aug 1, 1990 | Issued |
| 07/560710 | INTEGRATED CIRCUIT DEGRADATION RESISTANT STRUCTURE | Jul 30, 1990 | Abandoned |
Array
(
[id] => 2792323
[patent_doc_number] => 05142350
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-08-25
[patent_title] => 'Transistor having cubic boron nitride layer'
[patent_app_type] => 1
[patent_app_number] => 7/552978
[patent_app_country] => US
[patent_app_date] => 1990-07-16
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[firstpage_image] =>[orig_patent_app_number] => 552978
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/552978 | Transistor having cubic boron nitride layer | Jul 15, 1990 | Issued |
| 07/550154 | C-MOS THIN FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF | Jul 8, 1990 | Abandoned |
| 07/549056 | FIELD EFFECT TRANSISTOR | Jul 5, 1990 | Abandoned |
Array
(
[id] => 2855542
[patent_doc_number] => 05111260
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-05-05
[patent_title] => 'Polysilicon FETs'
[patent_app_type] => 1
[patent_app_number] => 7/548168
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[firstpage_image] =>[orig_patent_app_number] => 548168
[rel_patent_id] =>[rel_patent_doc_number] =>) 07/548168 | Polysilicon FETs | Jul 4, 1990 | Issued |
| 07/547050 | SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME | Jul 1, 1990 | Abandoned |
Array
(
[id] => 2674896
[patent_doc_number] => 05070379
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1991-12-03
[patent_title] => 'Thin-film transistor matrix for active matrix display panel with alloy electrodes'
[patent_app_type] => 1
[patent_app_number] => 7/540624
[patent_app_country] => US
[patent_app_date] => 1990-06-19
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/540624 | Thin-film transistor matrix for active matrix display panel with alloy electrodes | Jun 18, 1990 | Issued |
Array
(
[id] => 2837401
[patent_doc_number] => 05128731
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-07-07
[patent_title] => 'Static random access memory cell using a P/N-MOS transistors'
[patent_app_type] => 1
[patent_app_number] => 7/537848
[patent_app_country] => US
[patent_app_date] => 1990-06-13
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/537848 | Static random access memory cell using a P/N-MOS transistors | Jun 12, 1990 | Issued |
| 07/538082 | FIELD EFFECT SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME | Jun 12, 1990 | Abandoned |
Array
(
[id] => 2814249
[patent_doc_number] => 05157479
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1992-10-20
[patent_title] => 'Semiconductor device being capable of improving the packing density with a high heat radiation characteristics'
[patent_app_type] => 1
[patent_app_number] => 7/536079
[patent_app_country] => US
[patent_app_date] => 1990-06-08
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[rel_patent_id] =>[rel_patent_doc_number] =>) 07/536079 | Semiconductor device being capable of improving the packing density with a high heat radiation characteristics | Jun 7, 1990 | Issued |
| 07/534046 | SILICON CARBIDE FIELD-EFFECT TRANSISTOR | Jun 5, 1990 | Abandoned |