
Devon C. Kramer
Supervisory Patent Examiner (ID: 1983, Phone: (571)272-7118 , Office: P/3746 )
| Most Active Art Unit | 3683 |
| Art Unit(s) | 3683, 3741, 3613, 3746 |
| Total Applications | 1035 |
| Issued Applications | 672 |
| Pending Applications | 81 |
| Abandoned Applications | 283 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 1090123
[patent_doc_number] => 06828645
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2004-12-07
[patent_title] => 'Voltage withstanding structure for a semiconductor device'
[patent_app_type] => B2
[patent_app_number] => 10/460135
[patent_app_country] => US
[patent_app_date] => 2003-06-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 10
[patent_figures_cnt] => 17
[patent_no_of_words] => 7721
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[patent_words_short_claim] => 103
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/828/06828645.pdf
[firstpage_image] =>[orig_patent_app_number] => 10460135
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/460135 | Voltage withstanding structure for a semiconductor device | Jun 11, 2003 | Issued |
Array
(
[id] => 7278817
[patent_doc_number] => 20040061194
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2004-04-01
[patent_title] => 'Gallium nitride compound semiconductor device having schottky contact'
[patent_app_type] => new
[patent_app_number] => 10/453045
[patent_app_country] => US
[patent_app_date] => 2003-06-03
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0061/20040061194.pdf
[firstpage_image] =>[orig_patent_app_number] => 10453045
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/453045 | Gallium nitride compound semiconductor device having schottky contact | Jun 2, 2003 | Issued |
Array
(
[id] => 7427657
[patent_doc_number] => 20040007766
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2004-01-15
[patent_title] => 'Semiconductor device and method for manufacturing the same'
[patent_app_type] => new
[patent_app_number] => 10/445952
[patent_app_country] => US
[patent_app_date] => 2003-05-28
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[pdf_file] => publications/A1/0007/20040007766.pdf
[firstpage_image] =>[orig_patent_app_number] => 10445952
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/445952 | Semiconductor device and method for manufacturing the same | May 27, 2003 | Issued |
Array
(
[id] => 1062772
[patent_doc_number] => 06849516
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-02-01
[patent_title] => 'Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer'
[patent_app_type] => utility
[patent_app_number] => 10/442745
[patent_app_country] => US
[patent_app_date] => 2003-05-21
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
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[patent_no_of_words] => 5304
[patent_no_of_claims] => 28
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[pdf_file] => patents/06/849/06849516.pdf
[firstpage_image] =>[orig_patent_app_number] => 10442745
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/442745 | Methods of forming drain/source extension structures of a field effect transistor using a doped high-k dielectric layer | May 20, 2003 | Issued |
Array
(
[id] => 6611461
[patent_doc_number] => 20030209761
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[patent_kind] => A1
[patent_issue_date] => 2003-11-13
[patent_title] => 'Semiconductor device and manufacturing method thereof'
[patent_app_type] => new
[patent_app_number] => 10/436181
[patent_app_country] => US
[patent_app_date] => 2003-05-13
[patent_effective_date] => 0000-00-00
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[pdf_file] => publications/A1/0209/20030209761.pdf
[firstpage_image] =>[orig_patent_app_number] => 10436181
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/436181 | Semiconductor device and manufacturing method thereof | May 12, 2003 | Issued |
Array
(
[id] => 7189701
[patent_doc_number] => 20040084727
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2004-05-06
[patent_title] => 'Semiconductor device and learning method thereof'
[patent_app_type] => new
[patent_app_number] => 10/434358
[patent_app_country] => US
[patent_app_date] => 2003-05-09
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[pdf_file] => publications/A1/0084/20040084727.pdf
[firstpage_image] =>[orig_patent_app_number] => 10434358
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/434358 | Semiconductor device and learning method thereof | May 8, 2003 | Issued |
Array
(
[id] => 1081313
[patent_doc_number] => 06835972
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[patent_issue_date] => 2004-12-28
[patent_title] => 'Bowtie and T-shaped structures of L-shaped mesh implementation'
[patent_app_type] => B2
[patent_app_number] => 10/434715
[patent_app_country] => US
[patent_app_date] => 2003-05-09
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[pdf_file] => patents/06/835/06835972.pdf
[firstpage_image] =>[orig_patent_app_number] => 10434715
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/434715 | Bowtie and T-shaped structures of L-shaped mesh implementation | May 8, 2003 | Issued |
Array
(
[id] => 7314312
[patent_doc_number] => 20040222488
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2004-11-11
[patent_title] => 'HIGH VOLTAGE N-LDMOS TRANSISTORS HAVING SHALLOW TRENCH ISOLATION REGION'
[patent_app_type] => new
[patent_app_number] => 10/249766
[patent_app_country] => US
[patent_app_date] => 2003-05-06
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
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[patent_no_of_words] => 3291
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[pdf_file] => publications/A1/0222/20040222488.pdf
[firstpage_image] =>[orig_patent_app_number] => 10249766
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/249766 | High voltage N-LDMOS transistors having shallow trench isolation region | May 5, 2003 | Issued |
Array
(
[id] => 982310
[patent_doc_number] => 06927154
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-08-09
[patent_title] => 'Method for fabricating a transistor with a gate structure'
[patent_app_type] => utility
[patent_app_number] => 10/431425
[patent_app_country] => US
[patent_app_date] => 2003-05-06
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[firstpage_image] =>[orig_patent_app_number] => 10431425
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/431425 | Method for fabricating a transistor with a gate structure | May 5, 2003 | Issued |
Array
(
[id] => 6723145
[patent_doc_number] => 20030205457
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2003-11-06
[patent_title] => 'Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same'
[patent_app_type] => new
[patent_app_number] => 10/428835
[patent_app_country] => US
[patent_app_date] => 2003-05-05
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 18
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[pdf_file] => publications/A1/0205/20030205457.pdf
[firstpage_image] =>[orig_patent_app_number] => 10428835
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/428835 | Semiconductor carbon nanotubes fabricated by hydrogen functionalization and method for fabricating the same | May 4, 2003 | Abandoned |
Array
(
[id] => 1043650
[patent_doc_number] => 06867083
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[patent_issue_date] => 2005-03-15
[patent_title] => 'Method of forming a body contact of a transistor and structure therefor'
[patent_app_type] => utility
[patent_app_number] => 10/426515
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[patent_app_date] => 2003-05-01
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/426515 | Method of forming a body contact of a transistor and structure therefor | Apr 30, 2003 | Issued |
Array
(
[id] => 1009692
[patent_doc_number] => 06900454
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[patent_issue_date] => 2005-05-31
[patent_title] => 'Resonant controlled qubit system'
[patent_app_type] => utility
[patent_app_number] => 10/419024
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[firstpage_image] =>[orig_patent_app_number] => 10419024
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/419024 | Resonant controlled qubit system | Apr 16, 2003 | Issued |
Array
(
[id] => 6768025
[patent_doc_number] => 20030213965
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[patent_title] => 'Luminescent diode chip that is flip-chip mounted on a carrier, and method for production thereof'
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Array
(
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[patent_title] => 'Field effect transistor having a MIS structure and method of fabricating the same'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/396416 | Field effect transistor having a MIS structure and method of fabricating the same | Mar 25, 2003 | Issued |
Array
(
[id] => 6727710
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[patent_title] => 'High-voltage diode and method for fabricating the high-voltage diode'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/395425 | High-voltage diode | Mar 23, 2003 | Issued |
Array
(
[id] => 1056808
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[patent_issue_date] => 2005-02-15
[patent_title] => 'High-breakdown-voltage semiconductor device'
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[patent_app_number] => 10/393914
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/393914 | High-breakdown-voltage semiconductor device | Mar 23, 2003 | Issued |
Array
(
[id] => 6738213
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[patent_issue_date] => 2003-08-21
[patent_title] => 'Controllable semiconductor component'
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[patent_app_number] => 10/393165
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/393165 | Controllable semiconductor component with multi-section control electrode | Mar 19, 2003 | Issued |
Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/388815 | Avalanche diode with breakdown voltage controlled by gate length | Mar 13, 2003 | Issued |
Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/374305 | Ion implantation with multiple concentration levels | Feb 24, 2003 | Issued |
Array
(
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[patent_title] => 'Method for fabricating a bipolar transistor in a BiCMOS process and related structure'
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[pdf_file] => patents/06/797/06797580.pdf
[firstpage_image] =>[orig_patent_app_number] => 10371706
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/371706 | Method for fabricating a bipolar transistor in a BiCMOS process and related structure | Feb 20, 2003 | Issued |