Search

Edward H. Tso

Examiner (ID: 603, Phone: (571)272-2087 , Office: P/2859 )

Most Active Art Unit
2838
Art Unit(s)
2859, 2858, 2102, 2838, 2111
Total Applications
4078
Issued Applications
3589
Pending Applications
202
Abandoned Applications
333

Applications

Application numberTitle of the applicationFiling DateStatus
Array ( [id] => 16673597 [patent_doc_number] => 20210062360 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-03-04 [patent_title] => Nano-Ridge Engineering [patent_app_type] => utility [patent_app_number] => 16/996146 [patent_app_country] => US [patent_app_date] => 2020-08-18 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 4704 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -19 [patent_words_short_claim] => 131 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16996146 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/996146
Methods for improved III/V nano-ridge fabrication on silicon Aug 17, 2020 Issued
Array ( [id] => 19855850 [patent_doc_number] => 12258675 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2025-03-25 [patent_title] => Method of producing a silicon single crystal based on concentration profiles of vacancies and interstitial silicon atoms during pulling of a silicon single crystal by the Czochralski process [patent_app_type] => utility [patent_app_number] => 17/772895 [patent_app_country] => US [patent_app_date] => 2020-08-12 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 6 [patent_figures_cnt] => 10 [patent_no_of_words] => 6647 [patent_no_of_claims] => 6 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 368 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17772895 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/772895
Method of producing a silicon single crystal based on concentration profiles of vacancies and interstitial silicon atoms during pulling of a silicon single crystal by the Czochralski process Aug 11, 2020 Issued
Array ( [id] => 16629096 [patent_doc_number] => 20210047749 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-02-18 [patent_title] => DIAMETER EXPANSION OF ALUMINUM NITRIDE CRYSTALS DURING GROWTH BY PHYSICAL VAPOR TRANSPORT [patent_app_type] => utility [patent_app_number] => 16/991279 [patent_app_country] => US [patent_app_date] => 2020-08-12 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 22661 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -18 [patent_words_short_claim] => 2 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16991279 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/991279
DIAMETER EXPANSION OF ALUMINUM NITRIDE CRYSTALS DURING GROWTH BY PHYSICAL VAPOR TRANSPORT Aug 11, 2020 Abandoned
Array ( [id] => 17883193 [patent_doc_number] => 20220298670 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-09-22 [patent_title] => METHOD FOR PRODUCING SEMICONDUCTOR WAFERS FROM MONOCRYSTALLINE SILICON [patent_app_type] => utility [patent_app_number] => 17/636370 [patent_app_country] => US [patent_app_date] => 2020-08-05 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 1722 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -2 [patent_words_short_claim] => 139 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17636370 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/636370
Method for producing semiconductor wafers of monocrystalline silicon by pulling a single silicon crystal from a melt contained in a crucible and continually changing the rotational direction of the crucible Aug 4, 2020 Issued
Array ( [id] => 17867588 [patent_doc_number] => 20220290324 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-09-15 [patent_title] => SiC SUBSTRATE PRODUCTION METHOD [patent_app_type] => utility [patent_app_number] => 17/633118 [patent_app_country] => US [patent_app_date] => 2020-08-05 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 14369 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -11 [patent_words_short_claim] => 105 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17633118 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/633118
Method for producing a SiC substrate via an etching step, growth step, and peeling step Aug 4, 2020 Issued
Array ( [id] => 17946253 [patent_doc_number] => 20220333270 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-10-20 [patent_title] => SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, SiC INGOT PRODUCED BY GROWING SAID SiC SEED CRYSTAL AND METHOD FOR PRODUCING SAME, AND SiC WAFER PRODUCED FROM SAID SiC INGOT AND SiC WAFER WITH EPITAXIAL FILM AND METHODS RESPECTIVELY FOR PRODUCING SAID SiC WAFER AND SAID SiC WAFER WITH EPITAXIAL FILM [patent_app_type] => utility [patent_app_number] => 17/633096 [patent_app_country] => US [patent_app_date] => 2020-08-05 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 20814 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -36 [patent_words_short_claim] => 26 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17633096 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/633096
Method for producing a SiC seed crystal for growth of a SiC ingot by heat-treating in a main container made of a SiC material Aug 4, 2020 Issued
Array ( [id] => 17807922 [patent_doc_number] => 20220259757 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-08-18 [patent_title] => SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, MANUFACTURING METHOD FOR SILICON INGOT, AND SOLAR CELL [patent_app_type] => utility [patent_app_number] => 17/627412 [patent_app_country] => US [patent_app_date] => 2020-07-17 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 35052 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -22 [patent_words_short_claim] => 273 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17627412 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/627412
SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, MANUFACTURING METHOD FOR SILICON INGOT, AND SOLAR CELL Jul 16, 2020 Abandoned
Array ( [id] => 16624789 [patent_doc_number] => 20210043442 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2021-02-11 [patent_title] => METHOD FOR IMPROVING FLATNESS OF SEMICONDUCTOR THIN FILM [patent_app_type] => utility [patent_app_number] => 16/928577 [patent_app_country] => US [patent_app_date] => 2020-07-14 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 3414 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 74 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16928577 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/928577
METHOD FOR IMPROVING FLATNESS OF SEMICONDUCTOR THIN FILM Jul 13, 2020 Abandoned
Array ( [id] => 18623733 [patent_doc_number] => 11756788 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2023-09-12 [patent_title] => Method for growing a metastable crystalline structure which is a 2-dimensional planar film from a nanowire metastable seed crystal provided inside a template structure [patent_app_type] => utility [patent_app_number] => 16/926850 [patent_app_country] => US [patent_app_date] => 2020-07-13 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 5 [patent_figures_cnt] => 15 [patent_no_of_words] => 6027 [patent_no_of_claims] => 14 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 108 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16926850 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/926850
Method for growing a metastable crystalline structure which is a 2-dimensional planar film from a nanowire metastable seed crystal provided inside a template structure Jul 12, 2020 Issued
Array ( [id] => 17807923 [patent_doc_number] => 20220259758 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-08-18 [patent_title] => A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (111) SI [patent_app_type] => utility [patent_app_number] => 17/625441 [patent_app_country] => US [patent_app_date] => 2020-07-07 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 5692 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -16 [patent_words_short_claim] => 2 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17625441 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/625441
A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (111) SI Jul 6, 2020 Pending
Array ( [id] => 17588016 [patent_doc_number] => 11326274 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2022-05-10 [patent_title] => Single crystal growth crucible having a first housing and a second housing, and single crystal production device [patent_app_type] => utility [patent_app_number] => 16/910542 [patent_app_country] => US [patent_app_date] => 2020-06-24 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 4 [patent_no_of_words] => 6945 [patent_no_of_claims] => 6 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 303 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16910542 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/910542
Single crystal growth crucible having a first housing and a second housing, and single crystal production device Jun 23, 2020 Issued
Array ( [id] => 17392754 [patent_doc_number] => 11241745 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2022-02-08 [patent_title] => Cutting tool including substrate and coating layer [patent_app_type] => utility [patent_app_number] => 17/254521 [patent_app_country] => US [patent_app_date] => 2020-06-22 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 6 [patent_no_of_words] => 12931 [patent_no_of_claims] => 6 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 293 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17254521 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/254521
Cutting tool including substrate and coating layer Jun 21, 2020 Issued
Array ( [id] => 17990565 [patent_doc_number] => 20220356602 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-11-10 [patent_title] => IN-SITU AND SELECTIVE AREA ETCHING OF SURFACES OR LAYERS, AND HIGH-SPEED GROWTH OF GALLIUM NITRIDE, BY ORGANOMETALLIC CHLORINE PRECURSORS [patent_app_type] => utility [patent_app_number] => 17/620182 [patent_app_country] => US [patent_app_date] => 2020-06-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 7454 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -17 [patent_words_short_claim] => 2 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17620182 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/620182
IN-SITU AND SELECTIVE AREA ETCHING OF SURFACES OR LAYERS, AND HIGH-SPEED GROWTH OF GALLIUM NITRIDE, BY ORGANOMETALLIC CHLORINE PRECURSORS Jun 15, 2020 Pending
Array ( [id] => 16771254 [patent_doc_number] => 10982349 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2021-04-20 [patent_title] => Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum [patent_app_type] => utility [patent_app_number] => 16/903345 [patent_app_country] => US [patent_app_date] => 2020-06-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 4 [patent_figures_cnt] => 4 [patent_no_of_words] => 15124 [patent_no_of_claims] => 19 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 297 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16903345 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/903345
Temperature field device comprising a first drum, a second drum, and a filler inside the second drum and a space between the second drum and the first drum Jun 15, 2020 Issued
Array ( [id] => 17830593 [patent_doc_number] => 20220267897 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-08-25 [patent_title] => GROUP III COMPOUND SUBSTRATE PRODUCTION METHOD AND SUBSTRATE PRODUCED BY THIS PRODUCTION METHOD [patent_app_type] => utility [patent_app_number] => 17/628745 [patent_app_country] => US [patent_app_date] => 2020-06-16 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 11349 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -16 [patent_words_short_claim] => 70 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17628745 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/628745
Method for producing a group III compound crystal by hydride vapor phase epitaxy on a seed substrate formed on a group III nitride base substrate Jun 15, 2020 Issued
Array ( [id] => 17953780 [patent_doc_number] => 11479875 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2022-10-25 [patent_title] => System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport [patent_app_type] => utility [patent_app_number] => 16/894337 [patent_app_country] => US [patent_app_date] => 2020-06-05 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 9 [patent_figures_cnt] => 12 [patent_no_of_words] => 6898 [patent_no_of_claims] => 9 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 406 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16894337 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/894337
System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport Jun 4, 2020 Issued
Array ( [id] => 18134987 [patent_doc_number] => 11560643 [patent_country] => US [patent_kind] => B2 [patent_issue_date] => 2023-01-24 [patent_title] => System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport [patent_app_type] => utility [patent_app_number] => 16/894428 [patent_app_country] => US [patent_app_date] => 2020-06-05 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 13 [patent_figures_cnt] => 13 [patent_no_of_words] => 6276 [patent_no_of_claims] => 12 [patent_no_of_ind_claims] => 1 [patent_words_short_claim] => 245 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => patent [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16894428 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/894428
System for efficient manufacturing of a plurality of high-quality semiconductor single crystals by physical vapor transport Jun 4, 2020 Issued
Array ( [id] => 16506630 [patent_doc_number] => 20200385886 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2020-12-10 [patent_title] => APPARATUS FOR PRODUCING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL [patent_app_type] => utility [patent_app_number] => 16/889852 [patent_app_country] => US [patent_app_date] => 2020-06-02 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 5771 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -3 [patent_words_short_claim] => 195 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 16889852 [rel_patent_id] =>[rel_patent_doc_number] =>)
16/889852
Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions Jun 1, 2020 Issued
Array ( [id] => 18469424 [patent_doc_number] => 20230203708 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2023-06-29 [patent_title] => SILICON CARBIDE INGOT MANUFACTURING METHOD, SILICON CARBIDE INGOTS, AND GROWTH SYSTEM THEREFOR [patent_app_type] => utility [patent_app_number] => 17/928391 [patent_app_country] => US [patent_app_date] => 2020-06-02 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 6911 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -7 [patent_words_short_claim] => 138 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17928391 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/928391
SILICON CARBIDE INGOT MANUFACTURING METHOD, SILICON CARBIDE INGOTS, AND GROWTH SYSTEM THEREFOR Jun 1, 2020 Abandoned
Array ( [id] => 17990564 [patent_doc_number] => 20220356601 [patent_country] => US [patent_kind] => A1 [patent_issue_date] => 2022-11-10 [patent_title] => METHOD FOR PRODUCING SEMICONDUCTOR WAFERS FROM SILICON [patent_app_type] => utility [patent_app_number] => 17/619064 [patent_app_country] => US [patent_app_date] => 2020-06-02 [patent_effective_date] => 0000-00-00 [patent_drawing_sheets_cnt] => 0 [patent_figures_cnt] => 0 [patent_no_of_words] => 2833 [patent_no_of_claims] => 0 [patent_no_of_ind_claims] => -9 [patent_words_short_claim] => 2 [patent_maintenance] => 1 [patent_no_of_assignments] => 0 [patent_current_assignee] =>[type] => publication [pdf_file] =>[firstpage_image] =>[orig_patent_app_number] => 17619064 [rel_patent_id] =>[rel_patent_doc_number] =>)
17/619064
Method for producing silicon semiconductor wafers having low concentrations of pinholes Jun 1, 2020 Issued
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