
Eric E. Silverman
Examiner (ID: 15411)
| Most Active Art Unit | 1618 |
| Art Unit(s) | 1618, 1615 |
| Total Applications | 298 |
| Issued Applications | 111 |
| Pending Applications | 2 |
| Abandoned Applications | 185 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 4191077
[patent_doc_number] => 06043128
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-03-28
[patent_title] => 'Semiconductor device handling multi-level voltages'
[patent_app_type] => 1
[patent_app_number] => 9/017417
[patent_app_country] => US
[patent_app_date] => 1998-02-02
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
[patent_figures_cnt] => 23
[patent_no_of_words] => 4059
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[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 205
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/043/06043128.pdf
[firstpage_image] =>[orig_patent_app_number] => 017417
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/017417 | Semiconductor device handling multi-level voltages | Feb 1, 1998 | Issued |
Array
(
[id] => 4136900
[patent_doc_number] => 06034396
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-03-07
[patent_title] => 'Ultra-short channel recessed gate MOSFET with a buried contact'
[patent_app_type] => 1
[patent_app_number] => 9/014867
[patent_app_country] => US
[patent_app_date] => 1998-01-28
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/034/06034396.pdf
[firstpage_image] =>[orig_patent_app_number] => 014867
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/014867 | Ultra-short channel recessed gate MOSFET with a buried contact | Jan 27, 1998 | Issued |
Array
(
[id] => 4080810
[patent_doc_number] => 06054354
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-04-25
[patent_title] => 'High voltage field effect transistors with selective gate depletion'
[patent_app_type] => 1
[patent_app_number] => 9/014889
[patent_app_country] => US
[patent_app_date] => 1998-01-28
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[patent_drawing_sheets_cnt] => 2
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[patent_no_of_words] => 2086
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[patent_words_short_claim] => 148
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[pdf_file] => patents/06/054/06054354.pdf
[firstpage_image] =>[orig_patent_app_number] => 014889
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/014889 | High voltage field effect transistors with selective gate depletion | Jan 27, 1998 | Issued |
Array
(
[id] => 4197878
[patent_doc_number] => 06013577
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-01-11
[patent_title] => 'Method of making an amorphous surface for a gate electrode during the fabrication of a semiconductor device'
[patent_app_type] => 1
[patent_app_number] => 9/014467
[patent_app_country] => US
[patent_app_date] => 1998-01-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
[patent_figures_cnt] => 22
[patent_no_of_words] => 3057
[patent_no_of_claims] => 12
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[pdf_file] => patents/06/013/06013577.pdf
[firstpage_image] =>[orig_patent_app_number] => 014467
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/014467 | Method of making an amorphous surface for a gate electrode during the fabrication of a semiconductor device | Jan 27, 1998 | Issued |
Array
(
[id] => 1435866
[patent_doc_number] => 06355509
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-03-12
[patent_title] => 'Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication'
[patent_app_type] => B1
[patent_app_number] => 09/014639
[patent_app_country] => US
[patent_app_date] => 1998-01-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 12
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[patent_no_of_words] => 7812
[patent_no_of_claims] => 38
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/355/06355509.pdf
[firstpage_image] =>[orig_patent_app_number] => 09014639
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/014639 | Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication | Jan 27, 1998 | Issued |
Array
(
[id] => 4242244
[patent_doc_number] => 06144047
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-11-07
[patent_title] => 'Semiconductor device having impurity concentrations for preventing a parasitic channel'
[patent_app_type] => 1
[patent_app_number] => 9/014108
[patent_app_country] => US
[patent_app_date] => 1998-01-27
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[patent_no_of_words] => 4265
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[pdf_file] => patents/06/144/06144047.pdf
[firstpage_image] =>[orig_patent_app_number] => 014108
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/014108 | Semiconductor device having impurity concentrations for preventing a parasitic channel | Jan 26, 1998 | Issued |
Array
(
[id] => 4218787
[patent_doc_number] => 06040210
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-03-21
[patent_title] => '2F-square memory cell for gigabit memory applications'
[patent_app_type] => 1
[patent_app_number] => 9/013509
[patent_app_country] => US
[patent_app_date] => 1998-01-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 49
[patent_figures_cnt] => 72
[patent_no_of_words] => 20039
[patent_no_of_claims] => 11
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/040/06040210.pdf
[firstpage_image] =>[orig_patent_app_number] => 013509
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/013509 | 2F-square memory cell for gigabit memory applications | Jan 25, 1998 | Issued |
Array
(
[id] => 4153231
[patent_doc_number] => 06107153
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-08-22
[patent_title] => 'Method of forming a trench capacitor for a DRAM cell'
[patent_app_type] => 1
[patent_app_number] => 9/013689
[patent_app_country] => US
[patent_app_date] => 1998-01-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 7
[patent_no_of_words] => 1612
[patent_no_of_claims] => 14
[patent_no_of_ind_claims] => 3
[patent_words_short_claim] => 170
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/107/06107153.pdf
[firstpage_image] =>[orig_patent_app_number] => 013689
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/013689 | Method of forming a trench capacitor for a DRAM cell | Jan 25, 1998 | Issued |
Array
(
[id] => 3957065
[patent_doc_number] => 05930612
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-07-27
[patent_title] => 'Method of manufacturing complementary MOS semiconductor device'
[patent_app_type] => 1
[patent_app_number] => 9/013669
[patent_app_country] => US
[patent_app_date] => 1998-01-26
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[patent_drawing_sheets_cnt] => 5
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[pdf_file] => patents/05/930/05930612.pdf
[firstpage_image] =>[orig_patent_app_number] => 013669
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/013669 | Method of manufacturing complementary MOS semiconductor device | Jan 25, 1998 | Issued |
Array
(
[id] => 4329599
[patent_doc_number] => 06313036
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2001-11-06
[patent_title] => 'Method for producing semiconductor device'
[patent_app_type] => 1
[patent_app_number] => 9/010927
[patent_app_country] => US
[patent_app_date] => 1998-01-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
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[pdf_file] => patents/06/313/06313036.pdf
[firstpage_image] =>[orig_patent_app_number] => 010927
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/010927 | Method for producing semiconductor device | Jan 21, 1998 | Issued |
Array
(
[id] => 4084505
[patent_doc_number] => 06025225
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-02-15
[patent_title] => 'Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same'
[patent_app_type] => 1
[patent_app_number] => 9/010729
[patent_app_country] => US
[patent_app_date] => 1998-01-22
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[pdf_file] => patents/06/025/06025225.pdf
[firstpage_image] =>[orig_patent_app_number] => 010729
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/010729 | Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same | Jan 21, 1998 | Issued |
Array
(
[id] => 3938800
[patent_doc_number] => 05939750
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-08-17
[patent_title] => 'Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers'
[patent_app_type] => 1
[patent_app_number] => 9/009909
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[pdf_file] => patents/05/939/05939750.pdf
[firstpage_image] =>[orig_patent_app_number] => 009909
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/009909 | Use of implanted ions to reduce oxide-nitride-oxide (ONO) etch residue and polystringers | Jan 20, 1998 | Issued |
Array
(
[id] => 4094850
[patent_doc_number] => 06096618
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-08-01
[patent_title] => 'Method of making a Schottky diode with sub-minimum guard ring'
[patent_app_type] => 1
[patent_app_number] => 9/009087
[patent_app_country] => US
[patent_app_date] => 1998-01-20
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[firstpage_image] =>[orig_patent_app_number] => 009087
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/009087 | Method of making a Schottky diode with sub-minimum guard ring | Jan 19, 1998 | Issued |
Array
(
[id] => 4029904
[patent_doc_number] => 05994215
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[patent_issue_date] => 1999-11-30
[patent_title] => 'Method for suppression pattern distortion associated with BPSG reflow'
[patent_app_type] => 1
[patent_app_number] => 9/009198
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[patent_app_date] => 1998-01-20
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[firstpage_image] =>[orig_patent_app_number] => 009198
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/009198 | Method for suppression pattern distortion associated with BPSG reflow | Jan 19, 1998 | Issued |
| 08/913387 | METALLISED UNDER-LAYER FOR (SOLDERING) FILLER MATERIALS | Jan 19, 1998 | Abandoned |
Array
(
[id] => 4309460
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[patent_issue_date] => 2001-02-13
[patent_title] => 'Flash EPROM cell with reduced short channel effect and method for providing same'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/006757 | Flash EPROM cell with reduced short channel effect and method for providing same | Jan 13, 1998 | Issued |
Array
(
[id] => 6933419
[patent_doc_number] => 20010054763
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[patent_kind] => A1
[patent_issue_date] => 2001-12-27
[patent_title] => 'CONTACT ELECTRODE FOR N-TYPE GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR AND METHOD FOR FORMING THE SAME'
[patent_app_type] => new
[patent_app_number] => 09/006937
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[firstpage_image] =>[orig_patent_app_number] => 09006937
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/006937 | Contact electrode for N-type gallium nitride-based compound semiconductor and method for forming the same | Jan 13, 1998 | Issued |
Array
(
[id] => 4086669
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[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-10-17
[patent_title] => 'Formation of high-voltage and low-voltage devices on a semiconductor substrate'
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[patent_app_date] => 1998-01-13
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Array
(
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[patent_title] => 'Method for forming a multi-anchor DRAM capacitor and capacitor formed'
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Array
(
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[firstpage_image] =>[orig_patent_app_number] => 005739
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/005739 | Method for making a semiconductor device | Jan 11, 1998 | Issued |