| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 3628910
[patent_doc_number] => 05608255
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-03-04
[patent_title] => 'FET optical receiver using backside illumination, indium materials species'
[patent_app_type] => 1
[patent_app_number] => 8/443916
[patent_app_country] => US
[patent_app_date] => 1995-05-17
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/608/05608255.pdf
[firstpage_image] =>[orig_patent_app_number] => 443916
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/443916 | FET optical receiver using backside illumination, indium materials species | May 16, 1995 | Issued |
Array
(
[id] => 3511093
[patent_doc_number] => 05569946
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-10-29
[patent_title] => 'Flash memory cell with self-aligned tunnel dielectric area above LDD structure'
[patent_app_type] => 1
[patent_app_number] => 8/435191
[patent_app_country] => US
[patent_app_date] => 1995-05-05
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
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[patent_no_of_words] => 3029
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[pdf_file] => patents/05/569/05569946.pdf
[firstpage_image] =>[orig_patent_app_number] => 435191
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/435191 | Flash memory cell with self-aligned tunnel dielectric area above LDD structure | May 4, 1995 | Issued |
| 08/430039 | MODULAR MOSFETS FOR HIGH ASPECT RATIO APPLICATIONS | Apr 26, 1995 | Abandoned |
Array
(
[id] => 3517921
[patent_doc_number] => 05512770
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-04-30
[patent_title] => 'MOSFET device structure three spaced-apart deep boron implanted channel regions aligned with gate electrode of NMOSFET device'
[patent_app_type] => 1
[patent_app_number] => 8/427213
[patent_app_country] => US
[patent_app_date] => 1995-04-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 7
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[pdf_file] => patents/05/512/05512770.pdf
[firstpage_image] =>[orig_patent_app_number] => 427213
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/427213 | MOSFET device structure three spaced-apart deep boron implanted channel regions aligned with gate electrode of NMOSFET device | Apr 23, 1995 | Issued |
| 08/427209 | NEW MULTI-LEVEL CONDUCTOR PROCESS IN VLSI FABRICATION | Apr 23, 1995 | Abandoned |
Array
(
[id] => 3543968
[patent_doc_number] => 05481128
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-01-02
[patent_title] => 'Structure for flash memory cell'
[patent_app_type] => 1
[patent_app_number] => 8/426493
[patent_app_country] => US
[patent_app_date] => 1995-04-20
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 2
[patent_no_of_words] => 1711
[patent_no_of_claims] => 7
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[pdf_file] => patents/05/481/05481128.pdf
[firstpage_image] =>[orig_patent_app_number] => 426493
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/426493 | Structure for flash memory cell | Apr 19, 1995 | Issued |
| 08/423085 | SEMICONDUCTOR INTEGRATED CIRCUIT | Apr 17, 1995 | Abandoned |
| 08/419704 | MIS SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Apr 10, 1995 | Abandoned |
Array
(
[id] => 3626535
[patent_doc_number] => 05594262
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-01-14
[patent_title] => 'Elevated temperature gallium arsenide field effect transistor with aluminum arsenide to aluminum gallium arsenide mole fractioned buffer layer'
[patent_app_type] => 1
[patent_app_number] => 8/418747
[patent_app_country] => US
[patent_app_date] => 1995-04-07
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[pdf_file] => patents/05/594/05594262.pdf
[firstpage_image] =>[orig_patent_app_number] => 418747
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/418747 | Elevated temperature gallium arsenide field effect transistor with aluminum arsenide to aluminum gallium arsenide mole fractioned buffer layer | Apr 6, 1995 | Issued |
| 08/416203 | METAL-OXIDE SEMICONDUCTOR DEVICE | Apr 3, 1995 | Abandoned |
| 08/411967 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MAKING THE SAME | Mar 27, 1995 | Abandoned |
Array
(
[id] => 3706984
[patent_doc_number] => 05675161
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-10-07
[patent_title] => 'Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications'
[patent_app_type] => 1
[patent_app_number] => 8/411533
[patent_app_country] => US
[patent_app_date] => 1995-03-28
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/05/675/05675161.pdf
[firstpage_image] =>[orig_patent_app_number] => 411533
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/411533 | Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications | Mar 27, 1995 | Issued |
Array
(
[id] => 3833962
[patent_doc_number] => 05760417
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-06-02
[patent_title] => 'Semiconductor electron emission device'
[patent_app_type] => 1
[patent_app_number] => 8/410396
[patent_app_country] => US
[patent_app_date] => 1995-03-27
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
[patent_figures_cnt] => 17
[patent_no_of_words] => 13920
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[pdf_file] => patents/05/760/05760417.pdf
[firstpage_image] =>[orig_patent_app_number] => 410396
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/410396 | Semiconductor electron emission device | Mar 26, 1995 | Issued |
Array
(
[id] => 3513781
[patent_doc_number] => 05587609
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-12-24
[patent_title] => 'II-VI group compound semiconductor device metallic nitride ohmic contact for p-type'
[patent_app_type] => 1
[patent_app_number] => 8/409307
[patent_app_country] => US
[patent_app_date] => 1995-03-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 10
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[pdf_file] => patents/05/587/05587609.pdf
[firstpage_image] =>[orig_patent_app_number] => 409307
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/409307 | II-VI group compound semiconductor device metallic nitride ohmic contact for p-type | Mar 22, 1995 | Issued |
Array
(
[id] => 3658365
[patent_doc_number] => 05627139
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-05-06
[patent_title] => 'High-temperature superconducting josephson devices having a barrier layer of a doped, cubic crystalline, conductive oxide material'
[patent_app_type] => 1
[patent_app_number] => 8/407043
[patent_app_country] => US
[patent_app_date] => 1995-03-17
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
[patent_figures_cnt] => 14
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[pdf_file] => patents/05/627/05627139.pdf
[firstpage_image] =>[orig_patent_app_number] => 407043
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/407043 | High-temperature superconducting josephson devices having a barrier layer of a doped, cubic crystalline, conductive oxide material | Mar 16, 1995 | Issued |
Array
(
[id] => 3557571
[patent_doc_number] => 05574304
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-11-12
[patent_title] => 'Superluminescent diode with offset current injection regions'
[patent_app_type] => 1
[patent_app_number] => 8/394034
[patent_app_country] => US
[patent_app_date] => 1995-02-24
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 13
[patent_figures_cnt] => 20
[patent_no_of_words] => 7438
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[pdf_file] => patents/05/574/05574304.pdf
[firstpage_image] =>[orig_patent_app_number] => 394034
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/394034 | Superluminescent diode with offset current injection regions | Feb 23, 1995 | Issued |
| 08/392061 | SELF-ALIGNED METHOD FOR FORMING CONTACT WITH ZERO OFFSET TO GATE | Feb 21, 1995 | Abandoned |
| 08/391667 | SEMICONDUCTOR OPTICAL DEVICE | Feb 20, 1995 | Abandoned |
| 08/387095 | COMPOSITE BUMP STRUCTURE AND METHODS OF FABRICATION | Feb 12, 1995 | Abandoned |
| 08/386217 | JOSEPHSON JUNCTION DEVICE OF OXIDE SUPERCONDUCTOR AND PROCESS FOR PREPARING THE SAME | Feb 8, 1995 | Abandoned |