| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 3482571
[patent_doc_number] => 05446015
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-08-29
[patent_title] => 'Superconducting device having a reduced thickness of oxide superconducting layer'
[patent_app_type] => 1
[patent_app_number] => 8/194631
[patent_app_country] => US
[patent_app_date] => 1994-02-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 11
[patent_no_of_words] => 3805
[patent_no_of_claims] => 28
[patent_no_of_ind_claims] => 5
[patent_words_short_claim] => 233
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/446/05446015.pdf
[firstpage_image] =>[orig_patent_app_number] => 194631
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/194631 | Superconducting device having a reduced thickness of oxide superconducting layer | Feb 9, 1994 | Issued |
Array
(
[id] => 3120837
[patent_doc_number] => 05449938
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-09-12
[patent_title] => 'MOS-controlled power semiconductor component'
[patent_app_type] => 1
[patent_app_number] => 8/194464
[patent_app_country] => US
[patent_app_date] => 1994-02-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 2
[patent_no_of_words] => 1438
[patent_no_of_claims] => 18
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 119
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/449/05449938.pdf
[firstpage_image] =>[orig_patent_app_number] => 194464
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/194464 | MOS-controlled power semiconductor component | Feb 7, 1994 | Issued |
| 08/190228 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME | Jan 31, 1994 | Abandoned |
Array
(
[id] => 3539888
[patent_doc_number] => 05480859
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-01-02
[patent_title] => 'Bi-Sr-Ca-Cu-O superconductor junction through a Bi-Sr-Cu-O barrier layer'
[patent_app_type] => 1
[patent_app_number] => 8/183795
[patent_app_country] => US
[patent_app_date] => 1994-01-21
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 8
[patent_no_of_words] => 3261
[patent_no_of_claims] => 5
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 244
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/480/05480859.pdf
[firstpage_image] =>[orig_patent_app_number] => 183795
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/183795 | Bi-Sr-Ca-Cu-O superconductor junction through a Bi-Sr-Cu-O barrier layer | Jan 20, 1994 | Issued |
| 08/183581 | HIGH-TEMPERATURE SUPERCONDUCTING JOSEPHSON DEVICES HAVING A BARRIER LAYER OF A DOPED, CUBIC MATERIAL | Jan 17, 1994 | Abandoned |
Array
(
[id] => 3458212
[patent_doc_number] => 05378926
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-01-03
[patent_title] => 'Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal nitride barrier layer to block migration of tin through via holes'
[patent_app_type] => 1
[patent_app_number] => 8/179898
[patent_app_country] => US
[patent_app_date] => 1994-01-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 6
[patent_no_of_words] => 2856
[patent_no_of_claims] => 9
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 191
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/378/05378926.pdf
[firstpage_image] =>[orig_patent_app_number] => 179898
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/179898 | Bonding of integrated circuit chip to carrier using gold/tin eutectic alloy and refractory metal nitride barrier layer to block migration of tin through via holes | Jan 9, 1994 | Issued |
Array
(
[id] => 3479959
[patent_doc_number] => 05432362
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-07-11
[patent_title] => 'Resonant tunnel effect quantum well transistor'
[patent_app_type] => 1
[patent_app_number] => 8/180795
[patent_app_country] => US
[patent_app_date] => 1994-01-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 4
[patent_no_of_words] => 2687
[patent_no_of_claims] => 6
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 159
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/432/05432362.pdf
[firstpage_image] =>[orig_patent_app_number] => 180795
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/180795 | Resonant tunnel effect quantum well transistor | Jan 9, 1994 | Issued |
Array
(
[id] => 3002471
[patent_doc_number] => 05374472
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-12-20
[patent_title] => 'Ferromagnetic thin films'
[patent_app_type] => 1
[patent_app_number] => 8/177644
[patent_app_country] => US
[patent_app_date] => 1994-01-04
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 7
[patent_no_of_words] => 1975
[patent_no_of_claims] => 10
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 119
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/374/05374472.pdf
[firstpage_image] =>[orig_patent_app_number] => 177644
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/177644 | Ferromagnetic thin films | Jan 3, 1994 | Issued |
| 08/176583 | SINGLE CRYSTAL SILICON ON QUARTZ | Dec 29, 1993 | Abandoned |
Array
(
[id] => 3075376
[patent_doc_number] => 05360982
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1994-11-01
[patent_title] => 'Optoelectronic semiconductor having a groove-shaped waveguide'
[patent_app_type] => 1
[patent_app_number] => 8/161043
[patent_app_country] => US
[patent_app_date] => 1993-12-01
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 7
[patent_no_of_words] => 3768
[patent_no_of_claims] => 8
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 117
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/360/05360982.pdf
[firstpage_image] =>[orig_patent_app_number] => 161043
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/161043 | Optoelectronic semiconductor having a groove-shaped waveguide | Nov 30, 1993 | Issued |
| 08/158585 | BIPOLAR TRANSISTOR HAVING THIN INTRINSIC BASE WITH LOW BASE RESISTANCE AND METHOD FOR FABRICATING THE SAME | Nov 28, 1993 | Abandoned |
Array
(
[id] => 3484528
[patent_doc_number] => 05457333
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-10-10
[patent_title] => 'Gas sensor used in leak detectors or alarm units'
[patent_app_type] => 1
[patent_app_number] => 8/155548
[patent_app_country] => US
[patent_app_date] => 1993-11-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 8
[patent_figures_cnt] => 12
[patent_no_of_words] => 5559
[patent_no_of_claims] => 14
[patent_no_of_ind_claims] => 4
[patent_words_short_claim] => 176
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/457/05457333.pdf
[firstpage_image] =>[orig_patent_app_number] => 155548
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/155548 | Gas sensor used in leak detectors or alarm units | Nov 21, 1993 | Issued |
Array
(
[id] => 3557139
[patent_doc_number] => 05519234
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-05-21
[patent_title] => 'Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current'
[patent_app_type] => 1
[patent_app_number] => 8/154927
[patent_app_country] => US
[patent_app_date] => 1993-11-18
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 30
[patent_figures_cnt] => 60
[patent_no_of_words] => 22403
[patent_no_of_claims] => 23
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 98
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/519/05519234.pdf
[firstpage_image] =>[orig_patent_app_number] => 154927
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/154927 | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current | Nov 17, 1993 | Issued |
| 08/152705 | MOS-CONTROLLED DIODE | Nov 15, 1993 | Abandoned |
Array
(
[id] => 3463509
[patent_doc_number] => 05382813
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-01-17
[patent_title] => 'Light emission diode comprising a pn junction of p-type and n-type A1-containing ZnS compound semiconductor layers'
[patent_app_type] => 1
[patent_app_number] => 8/149359
[patent_app_country] => US
[patent_app_date] => 1993-11-09
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 1
[patent_no_of_words] => 2460
[patent_no_of_claims] => 7
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 92
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/382/05382813.pdf
[firstpage_image] =>[orig_patent_app_number] => 149359
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/149359 | Light emission diode comprising a pn junction of p-type and n-type A1-containing ZnS compound semiconductor layers | Nov 8, 1993 | Issued |
Array
(
[id] => 3579919
[patent_doc_number] => 05523619
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1996-06-04
[patent_title] => 'High density memory structure'
[patent_app_type] => 1
[patent_app_number] => 8/146845
[patent_app_country] => US
[patent_app_date] => 1993-11-03
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 3
[patent_no_of_words] => 2697
[patent_no_of_claims] => 15
[patent_no_of_ind_claims] => 3
[patent_words_short_claim] => 174
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/523/05523619.pdf
[firstpage_image] =>[orig_patent_app_number] => 146845
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/146845 | High density memory structure | Nov 2, 1993 | Issued |
| 08/134499 | SEMICONDUCTOR DEVICE COMPRISING A PLATINUM LAYER PROVIDED ON A SILICON OXIDE LAYER | Oct 11, 1993 | Abandoned |
| 08/134493 | ELECTRONIC DEVICES WITH OXYGEN OCTAHEDRAL BUFFERING MATERIALS AND STRUCTURES | Oct 7, 1993 | Abandoned |
| 08/131647 | SEMICONDUCTOR WITH IMPLANTED DIELECTRIC LAYER HAVING PATCHED PIN-HOLES | Oct 4, 1993 | Abandoned |
Array
(
[id] => 3428032
[patent_doc_number] => 05422513
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1995-06-06
[patent_title] => 'Integrated circuit chip placement in a high density interconnect structure'
[patent_app_type] => 1
[patent_app_number] => 8/329516
[patent_app_country] => US
[patent_app_date] => 1993-10-04
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 10
[patent_no_of_words] => 4302
[patent_no_of_claims] => 8
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 140
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/05/422/05422513.pdf
[firstpage_image] =>[orig_patent_app_number] => 329516
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/329516 | Integrated circuit chip placement in a high density interconnect structure | Oct 3, 1993 | Issued |