
Felisa Carla Hiteshew
Examiner (ID: 17738)
| Most Active Art Unit | 1765 |
| Art Unit(s) | 1107, 1109, 1765, 1722, 2899, 1792, 1101, 1732, 1763 |
| Total Applications | 1711 |
| Issued Applications | 1533 |
| Pending Applications | 72 |
| Abandoned Applications | 106 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
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[patent_doc_number] => 07520932
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[patent_issue_date] => 2009-04-21
[patent_title] => 'Method of analyzing carbon concentration in crystalline silicon'
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[patent_app_country] => US
[patent_app_date] => 2007-03-29
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[pdf_file] => patents/07/520/07520932.pdf
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Array
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[patent_title] => 'Method for manufacturing defect-free silicon single crystal'
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[patent_title] => 'Device and method for the production of monocrystalline or multicrystalline materials, in particular multicrystalline silicon'
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Array
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[patent_issue_date] => 2008-09-25
[patent_title] => 'Method of Making a Solar Grade Silicon Wafer'
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[patent_app_number] => 11/689294
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[patent_app_date] => 2007-03-21
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[patent_title] => 'Seed crystal fixing apparatus and a method for fixing the seed crystal'
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Array
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[patent_title] => 'METHOD FOR PRODUCING AlN SINGLE CRYSTAL AND AlN SINGLE CRYSTAL'
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Array
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[patent_title] => 'Nitrogen-doped silicon substantially free of oxidation induced stacking faults'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/623142 | Nitrogen-doped silicon substantially free of oxidation induced stacking faults | Jan 14, 2007 | Issued |
Array
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[patent_title] => 'ANNEAL OF EPITAXIAL LAYER IN A SEMICONDUCTOR DEVICE'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/620987 | Anneal of epitaxial layer in a semiconductor device | Jan 7, 2007 | Issued |
Array
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[patent_title] => 'Sapphire crystal growth method'
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Array
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Array
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Array
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