
Felisa Carla Hiteshew
Examiner (ID: 17738)
| Most Active Art Unit | 1765 |
| Art Unit(s) | 1107, 1109, 1765, 1722, 2899, 1792, 1101, 1732, 1763 |
| Total Applications | 1711 |
| Issued Applications | 1533 |
| Pending Applications | 72 |
| Abandoned Applications | 106 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 5212851
[patent_doc_number] => 20070101931
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2007-05-10
[patent_title] => 'Method for producing semiconductor crystal'
[patent_app_type] => utility
[patent_app_number] => 11/590930
[patent_app_country] => US
[patent_app_date] => 2006-11-01
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[pdf_file] => publications/A1/0101/20070101931.pdf
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/590930 | Method for producing semiconductor crystal | Oct 31, 2006 | Issued |
Array
(
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[patent_doc_number] => 07413605
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[patent_issue_date] => 2008-08-19
[patent_title] => 'Method for manufacturing silicon single crystal'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/553854 | Method for manufacturing silicon single crystal | Oct 26, 2006 | Issued |
Array
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[patent_issue_date] => 2008-09-23
[patent_title] => 'Silica glass crucible with barium-doped inner wall'
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[patent_app_date] => 2006-09-28
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/536517 | Silica glass crucible with barium-doped inner wall | Sep 27, 2006 | Issued |
Array
(
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[patent_issue_date] => 2007-03-22
[patent_title] => 'Method for epitaxial growth of silicon carbide'
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[patent_app_number] => 11/521869
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[patent_app_date] => 2006-09-15
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Array
(
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[patent_title] => 'Method and apparatus for making a highly uniform low-stress single crystal by drawing from a melt and uses of said crystal'
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Array
(
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[patent_doc_number] => 07399358
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[patent_issue_date] => 2008-07-15
[patent_title] => 'Synthesis of large homoepitaxial monocrystalline diamond'
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Array
(
[id] => 4985895
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[patent_title] => 'Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/509063 | Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate | Aug 23, 2006 | Issued |
Array
(
[id] => 579415
[patent_doc_number] => 07445672
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[patent_title] => 'Method of forming group-III nitride crystal, layered structure and epitaxial substrate'
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[patent_app_date] => 2006-08-14
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/503831 | Method of forming group-III nitride crystal, layered structure and epitaxial substrate | Aug 13, 2006 | Issued |
Array
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Array
(
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[patent_title] => 'Crystal growth apparatus and method of producing a crystal'
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Array
(
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[patent_title] => 'Method for marking a crystalline material using cathodoluminescence'
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Array
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Array
(
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Array
(
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Array
(
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Array
(
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Array
(
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Array
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