
Fetsum Abraham
Examiner (ID: 1991)
| Most Active Art Unit | 2826 |
| Art Unit(s) | 2818, 2508, 2826, 2811, 2825, 2515 |
| Total Applications | 1055 |
| Issued Applications | 981 |
| Pending Applications | 32 |
| Abandoned Applications | 42 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 4196130
[patent_doc_number] => 06130443
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 2000-10-10
[patent_title] => 'Liquid crystal display having wires made of molybdenum-tungsten alloy and a method of manufacturing the same'
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[patent_app_number] => 9/170100
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/170100 | Liquid crystal display having wires made of molybdenum-tungsten alloy and a method of manufacturing the same | Oct 12, 1998 | Issued |
Array
(
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[patent_doc_number] => 20010042883
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[patent_kind] => A1
[patent_issue_date] => 2001-11-22
[patent_title] => 'EEPROM CELL WITH SELF-ALIGNED TUNNELING WINDOW'
[patent_app_type] => new
[patent_app_number] => 09/169492
[patent_app_country] => US
[patent_app_date] => 1998-10-09
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Array
(
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[patent_doc_number] => 06177702
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[patent_issue_date] => 2001-01-23
[patent_title] => 'Semiconductor component with a split floating gate and tunnel region'
[patent_app_type] => 1
[patent_app_number] => 9/169774
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[patent_app_date] => 1998-10-09
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Array
(
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[patent_issue_date] => 2001-05-22
[patent_title] => 'Liquid crystal display and thin film transistor with capacitive electrode structure'
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[patent_app_number] => 9/166175
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[patent_app_date] => 1998-10-05
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[firstpage_image] =>[orig_patent_app_number] => 166175
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Array
(
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[patent_issue_date] => 2001-08-14
[patent_title] => 'Shielded channel transistor structure with embedded source/drain junctions'
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[patent_app_number] => 9/166818
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Array
(
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[patent_doc_number] => 06064096
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[patent_issue_date] => 2000-05-16
[patent_title] => 'Semiconductor LDD device having halo impurity regions'
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Array
(
[id] => 4009496
[patent_doc_number] => 06005274
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[patent_issue_date] => 1999-12-21
[patent_title] => 'Semiconductor device with a multi-level gate structure and a gate dielectric composed of barium zirconium titanate material'
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[patent_app_number] => 9/163966
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Array
(
[id] => 4364435
[patent_doc_number] => 06191452
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[patent_issue_date] => 2001-02-20
[patent_title] => 'Thin film transistor having a stopper layer'
[patent_app_type] => 1
[patent_app_number] => 9/162836
[patent_app_country] => US
[patent_app_date] => 1998-09-29
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/162836 | Thin film transistor having a stopper layer | Sep 28, 1998 | Issued |
Array
(
[id] => 4264890
[patent_doc_number] => 06204542
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[patent_issue_date] => 2001-03-20
[patent_title] => 'Field effect transistor with improved driving capability'
[patent_app_type] => 1
[patent_app_number] => 9/161916
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/161916 | Field effect transistor with improved driving capability | Sep 28, 1998 | Issued |
Array
(
[id] => 6593538
[patent_doc_number] => 20020063255
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[patent_title] => 'THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR'
[patent_app_type] => new
[patent_app_number] => 09/162208
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/162208 | Thin-film transistor and method of manufacturing thin-film transistor with tapered gate of 20 degrees or less | Sep 27, 1998 | Issued |
Array
(
[id] => 4376734
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[patent_issue_date] => 2001-09-11
[patent_title] => 'Integrated circuit with oxidation-resistant polymeric layer'
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[patent_app_number] => 9/145012
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/145012 | Integrated circuit with oxidation-resistant polymeric layer | Sep 9, 1998 | Issued |
Array
(
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Array
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Array
(
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Array
(
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Array
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Array
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Array
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Array
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Array
(
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/135353 | Apparatus and method for container floating gate cell | Aug 16, 1998 | Issued |