| Application number | Title of the application | Filing Date | Status |
|---|
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| 09/164343 | SEMICONDUCTOR DEVICE HAVING METAL SILICIDE FILMS COVERING BOTH THE GATE ELECTRODE AND SOURCE-DRAIN DIFFUSION LAYERS | Sep 30, 1998 | Abandoned |
Array
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| 09/118231 | SELF-ALIGNED FUSE STRUCTURE AND METHOD WITH DUAL-THICKNESS DIELECTRIC | Jul 16, 1998 | Abandoned |
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