
Igwe U. Anya
Examiner (ID: 11819)
| Most Active Art Unit | 2891 |
| Art Unit(s) | 2891, 2825, 2829 |
| Total Applications | 1779 |
| Issued Applications | 1524 |
| Pending Applications | 97 |
| Abandoned Applications | 192 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 6460050
[patent_doc_number] => 20100006545
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[patent_kind] => A1
[patent_issue_date] => 2010-01-14
[patent_title] => 'Welding of Pipeline to Enhance Strain Performance'
[patent_app_type] => utility
[patent_app_number] => 12/086367
[patent_app_country] => US
[patent_app_date] => 2006-10-23
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Array
(
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[patent_doc_number] => 07488682
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[patent_kind] => B2
[patent_issue_date] => 2009-02-10
[patent_title] => 'High-density 3-dimensional resistors'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/538199 | High-density 3-dimensional resistors | Oct 2, 2006 | Issued |
Array
(
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[patent_issue_date] => 2007-05-17
[patent_title] => 'Semiconductor component comprising interconnected cell strips'
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Array
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[patent_issue_date] => 2009-08-25
[patent_title] => 'Interconnect connecting a diffusion metal layer and a power plane metal and fabricating method thereof'
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Array
(
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[patent_title] => 'Structure/method to fabricate a high-performance magnetic tunneling junction MRAM'
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Array
(
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[patent_doc_number] => 07547598
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[patent_title] => 'Method for fabricating capacitor in semiconductor device'
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Array
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[patent_title] => 'Amplification circuit and method therefor'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/817392 | Amplification circuit and method therefor | Sep 10, 2006 | Issued |
Array
(
[id] => 820544
[patent_doc_number] => 07407875
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[patent_issue_date] => 2008-08-05
[patent_title] => 'Low resistance contact structure and fabrication thereof'
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[patent_app_number] => 11/470349
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Array
(
[id] => 4688243
[patent_doc_number] => 20080032424
[patent_country] => US
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[patent_issue_date] => 2008-02-07
[patent_title] => 'ALD of Zr-substituted BaTiO3 films as gate dielectrics'
[patent_app_type] => utility
[patent_app_number] => 11/498559
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/498559 | Zr-substituted BaTiO3 films | Aug 2, 2006 | Issued |
Array
(
[id] => 5239781
[patent_doc_number] => 20070018272
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[patent_issue_date] => 2007-01-25
[patent_title] => 'Reduced Leakage Power Devices By Inversion Layer Surface Passivation'
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[patent_app_number] => 11/462016
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[firstpage_image] =>[orig_patent_app_number] => 11462016
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Array
(
[id] => 5073005
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[patent_title] => 'Large-area nanoenabled macroelectronic substrates and uses therefor'
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Array
(
[id] => 5733055
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[patent_title] => 'Methods for forming an enriched metal oxide surface'
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Array
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Array
(
[id] => 4992239
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[patent_title] => 'Gate structure and related non-volatile memory device and method'
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Array
(
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Array
(
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Array
(
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[patent_title] => 'METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING A PHOTOSENSITIVE POLYIMIDE LAYER AND SEMICONDUCTOR DEVICES FABRICATED THEREBY'
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Array
(
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Array
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Array
(
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[patent_doc_number] => 20070278556
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[patent_title] => 'Two bits non volatile memory cells and method of operating the same'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 11/442119 | Two bits non volatile memory cells and method of operating the same | May 29, 2006 | Abandoned |