
Jessica L. Rossi
Supervisory Patent Examiner (ID: 6887, Phone: (571)272-1223 , Office: P/4100 )
| Most Active Art Unit | |
| Art Unit(s) | |
| Total Applications | |
| Issued Applications | |
| Pending Applications | |
| Abandoned Applications |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
| 06/627372 | Trench capacitor process for high density dynamic RAM | Jul 2, 1984 | Issued |
| 06/627725 | SEMICONDUCTOR RANDOM ACCESS MEMORY ELEMENTS AND METHOD OF MANUFACTURING THE SAME | Jul 2, 1984 | Abandoned |
| 06/626512 | DYNAMIC RAM CELL WITH MOS TRENCH CAPACITOR IN CMOS | Jun 28, 1984 | Abandoned |
| 06/626165 | CONTROLLED TURN-ON THYRISTOR | Jun 28, 1984 | Abandoned |
| 06/625684 | SEMICONDUCTOR DEVICE HAVING A PROTECTION CIRCUIT | Jun 27, 1984 | Abandoned |
| 06/624166 | Interconnect and contact system for metal-gate MOS VLSI devices | Jun 24, 1984 | Issued |
| 06/622125 | THYRISTOR | Jun 18, 1984 | Abandoned |
| 06/618433 | MULTI-CHANNEL POWER JFET | Jun 7, 1984 | Abandoned |
| 06/618432 | Split row power JFET | Jun 7, 1984 | Issued |
| 06/618431 | Dual stack power JFET with buried field shaping depletion regions | Jun 7, 1984 | Issued |
| 06/618537 | Lateral bidirectional power FET with notched multi-channel stacking and with dual gate reference terminal means | Jun 7, 1984 | Issued |
| 06/610780 | Five layer semiconductor device with separate insulated turn-on and turn-off gates | May 15, 1984 | Issued |
| 06/609860 | HIGH POWER HIGH FREQUENCY SEMICONDUCTOR DEVICE WITH IMPROVED THERMAL RESISTANCE | May 13, 1984 | Abandoned |
| 06/608402 | Planar field-shaped bidirectional power FET | May 8, 1984 | Issued |
| 06/608401 | Bidirectional power FET with shorting-channel off state | May 8, 1984 | Issued |
| 06/597895 | ASYMMETRICAL FIELD CONTROLLED THYRISTOR | Apr 8, 1984 | Abandoned |
| 06/594589 | LATCH-UP RESISTANT CMOS STRUCTURE FOR VLSI | Mar 28, 1984 | Abandoned |
| 06/598281 | THYRISTOR AND METHOD OF MANUFACTURING THEREOF | Mar 18, 1984 | Abandoned |
| 06/585639 | Metal oxide semiconductor field-effect transistor with metal source region | Mar 7, 1984 | Issued |
| 06/587350 | SEMICONDUCTOR DEVICE | Mar 7, 1984 | Abandoned |