| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 2224106
[patent_doc_number] => 04595939
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-06-17
[patent_title] => 'Radiation-controllable thyristor with multiple, non-concentric amplified stages'
[patent_app_type] => 1
[patent_app_number] => 6/527477
[patent_app_country] => US
[patent_app_date] => 1983-08-29
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/04/595/04595939.pdf
[firstpage_image] =>[orig_patent_app_number] => 527477
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/527477 | Radiation-controllable thyristor with multiple, non-concentric amplified stages | Aug 28, 1983 | Issued |
Array
(
[id] => 2095389
[patent_doc_number] => 04486768
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1984-12-04
[patent_title] => 'Amplified gate turn-off thyristor'
[patent_app_type] => 1
[patent_app_number] => 6/526796
[patent_app_country] => US
[patent_app_date] => 1983-08-26
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 10
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/486/04486768.pdf
[firstpage_image] =>[orig_patent_app_number] => 526796
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/526796 | Amplified gate turn-off thyristor | Aug 25, 1983 | Issued |
Array
(
[id] => 2295814
[patent_doc_number] => 04639758
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1987-01-27
[patent_title] => 'Metal oxide semiconductor field-effect transistor with metal source making ohmic contact to channel-base region'
[patent_app_type] => 1
[patent_app_number] => 6/525707
[patent_app_country] => US
[patent_app_date] => 1983-08-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
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[patent_no_of_words] => 3880
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[patent_no_of_ind_claims] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/639/04639758.pdf
[firstpage_image] =>[orig_patent_app_number] => 525707
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/525707 | Metal oxide semiconductor field-effect transistor with metal source making ohmic contact to channel-base region | Aug 22, 1983 | Issued |
Array
(
[id] => 2453829
[patent_doc_number] => 04755861
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1988-07-05
[patent_title] => 'Light-firable thyristor'
[patent_app_type] => 1
[patent_app_number] => 6/524595
[patent_app_country] => US
[patent_app_date] => 1983-08-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 2
[patent_no_of_words] => 2102
[patent_no_of_claims] => 14
[patent_no_of_ind_claims] => 4
[patent_words_short_claim] => 330
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[pdf_file] => patents/04/755/04755861.pdf
[firstpage_image] =>[orig_patent_app_number] => 524595
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/524595 | Light-firable thyristor | Aug 18, 1983 | Issued |
| 06/512027 | SEMICONDUCTOR PHOTO-ELECTRIC CONVERTER | Jul 7, 1983 | Abandoned |
| 06/498687 | THYRISTOR | May 31, 1983 | Abandoned |
Array
(
[id] => 2432360
[patent_doc_number] => 04739387
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1988-04-19
[patent_title] => 'Amplifying gate thyristor having high gate sensitivity and high dv/dt rating'
[patent_app_type] => 1
[patent_app_number] => 6/497339
[patent_app_country] => US
[patent_app_date] => 1983-05-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 6
[patent_no_of_words] => 3212
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[patent_maintenance] => 1
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/739/04739387.pdf
[firstpage_image] =>[orig_patent_app_number] => 497339
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/497339 | Amplifying gate thyristor having high gate sensitivity and high dv/dt rating | May 22, 1983 | Issued |
Array
(
[id] => 2303522
[patent_doc_number] => 04682199
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1987-07-21
[patent_title] => 'High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer'
[patent_app_type] => 1
[patent_app_number] => 6/489505
[patent_app_country] => US
[patent_app_date] => 1983-04-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
[patent_figures_cnt] => 12
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[pdf_file] => patents/04/682/04682199.pdf
[firstpage_image] =>[orig_patent_app_number] => 489505
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/489505 | High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer | Apr 27, 1983 | Issued |
| 06/489285 | SEMICONDUCTOR DEVICES AND THEIR MANUFACTURE | Apr 27, 1983 | Abandoned |
| 06/483009 | GATE ENHANCED RECTIFIER | Apr 6, 1983 | Abandoned |
Array
(
[id] => 2389620
[patent_doc_number] => 04789882
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1988-12-06
[patent_title] => 'High power MOSFET with direct connection from connection pads to underlying silicon'
[patent_app_type] => 1
[patent_app_number] => 6/477012
[patent_app_country] => US
[patent_app_date] => 1983-03-21
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 4
[patent_no_of_words] => 2654
[patent_no_of_claims] => 7
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 306
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/789/04789882.pdf
[firstpage_image] =>[orig_patent_app_number] => 477012
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/477012 | High power MOSFET with direct connection from connection pads to underlying silicon | Mar 20, 1983 | Issued |
Array
(
[id] => 2420275
[patent_doc_number] => 04742384
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1988-05-03
[patent_title] => 'Structure for passivating a PN junction'
[patent_app_type] => 1
[patent_app_number] => 6/476722
[patent_app_country] => US
[patent_app_date] => 1983-03-18
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 6
[patent_no_of_words] => 2649
[patent_no_of_claims] => 4
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/742/04742384.pdf
[firstpage_image] =>[orig_patent_app_number] => 476722
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/476722 | Structure for passivating a PN junction | Mar 17, 1983 | Issued |
Array
(
[id] => 2247678
[patent_doc_number] => 04577215
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-03-18
[patent_title] => 'Dual word line, electrically alterable, nonvolatile floating gate memory device'
[patent_app_type] => 1
[patent_app_number] => 6/467643
[patent_app_country] => US
[patent_app_date] => 1983-02-18
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 5
[patent_no_of_words] => 3312
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[pdf_file] => patents/04/577/04577215.pdf
[firstpage_image] =>[orig_patent_app_number] => 467643
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/467643 | Dual word line, electrically alterable, nonvolatile floating gate memory device | Feb 17, 1983 | Issued |
| 06/463896 | SEMICONDUCTOR DEVICE | Feb 3, 1983 | Abandoned |
| 06/456716 | SEMICONDUCTOR ELEMENT | Jan 9, 1983 | Abandoned |
| 06/455343 | BALLISTIC HETERO-JUNCTION TRANSISTOR WITH TRANSVERSE TWO DIMENSIONAL ELECTRON GAS LAYER | Jan 2, 1983 | Abandoned |
| 06/451795 | STRUCTURE AND METHOD OF MANUFACTURE OF HIGH POWER MOSFET DEVICE | Dec 20, 1982 | Abandoned |
Array
(
[id] => 2204497
[patent_doc_number] => 04533932
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1985-08-06
[patent_title] => 'Semiconductor device with enlarged corners to provide enhanced punch through protection'
[patent_app_type] => 1
[patent_app_number] => 6/451412
[patent_app_country] => US
[patent_app_date] => 1982-12-20
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 12
[patent_figures_cnt] => 39
[patent_no_of_words] => 4848
[patent_no_of_claims] => 3
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/533/04533932.pdf
[firstpage_image] =>[orig_patent_app_number] => 451412
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/451412 | Semiconductor device with enlarged corners to provide enhanced punch through protection | Dec 19, 1982 | Issued |
Array
(
[id] => 2246489
[patent_doc_number] => 04622572
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-11-11
[patent_title] => 'High voltage semiconductor device having an improved DV/DT capability and plasma spreading'
[patent_app_type] => 1
[patent_app_number] => 6/446841
[patent_app_country] => US
[patent_app_date] => 1982-12-06
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 3
[patent_no_of_words] => 5493
[patent_no_of_claims] => 9
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/622/04622572.pdf
[firstpage_image] =>[orig_patent_app_number] => 446841
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/446841 | High voltage semiconductor device having an improved DV/DT capability and plasma spreading | Dec 5, 1982 | Issued |
| 06/445085 | SEMICONDUCTOR DEVICE INCLUDING GATE PROTECTION CIRCUIT | Nov 28, 1982 | Abandoned |