| Application number | Title of the application | Filing Date | Status |
|---|
| 06/441213 | STATIC INDUCTION TYPE THYRISTOR | Nov 11, 1982 | Abandoned |
| 06/436244 | HIGH VOLTAGE SEMICONDUCTOR DEVICES WITH REDUCED ON-RESISTANCE | Oct 24, 1982 | Abandoned |
| 06/435449 | OPTICALLY CONTROLLABLE STATIC INDUCTION THYRISTOR DEVICE | Oct 19, 1982 | Abandoned |
| 06/428954 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE METHOD OF MANUFACTURING THE SAME | Sep 29, 1982 | Abandoned |
Array
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[patent_issue_date] => 1985-04-02
[patent_title] => 'Light triggerable thyristor with controllable emitter-short circuit and trigger amplification'
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[patent_app_number] => 6/416333
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| 06/415920 | PNPN SEMICONDUCTOR SWITCHES | Sep 7, 1982 | Abandoned |
| 06/414835 | CELLULAR INTEGRATED CIRCUIT AND HIERARCHICAL METHOD | Sep 2, 1982 | Abandoned |
Array
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[patent_issue_date] => 1985-04-02
[patent_title] => 'Thyristor with controllable emitter short circuits and trigger amplification'
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| 06/412194 | SEMICONDUCTOR SWITCHING DEVICE | Aug 26, 1982 | Abandoned |
Array
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| 06/403635 | STATIC INDUCTION THYRISTOR | Jul 19, 1982 | Abandoned |
Array
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[id] => 2112332
[patent_doc_number] => 04467343
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[patent_kind] => NA
[patent_issue_date] => 1984-08-21
[patent_title] => 'Thyristor with a multi-layer semiconductor body with a pnpn layer sequence and a method for its manufacture with a {111} lateral edge bevelling'
[patent_app_type] => 1
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Array
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[patent_doc_number] => 04494134
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[patent_kind] => NA
[patent_issue_date] => 1985-01-15
[patent_title] => 'High voltage semiconductor devices comprising integral JFET'
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Array
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[patent_kind] => NA
[patent_issue_date] => 1983-10-04
[patent_title] => 'Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier for low reverse leakage over wide temperature range'
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[patent_app_number] => 6/393029
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Array
(
[id] => 2172103
[patent_doc_number] => 04541002
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1985-09-10
[patent_title] => 'Protective device for a semiconductor integrated circuit including double polysilicon resistor'
[patent_app_type] => 1
[patent_app_number] => 6/393117
[patent_app_country] => US
[patent_app_date] => 1982-06-28
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| 06/391920 | THYRISTOR | Jun 23, 1982 | Abandoned |
Array
(
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[patent_doc_number] => 04529998
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1985-07-16
[patent_title] => 'Amplified gate thyristor with non-latching amplified control transistors across base layers'
[patent_app_type] => 1
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| 06/391620 | SEMICONDUCTOR DEVICE WITH IMPROVED TURN-OFF CAPABILTIY | Jun 23, 1982 | Abandoned |
Array
(
[id] => 2231058
[patent_doc_number] => 04571512
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[patent_kind] => NA
[patent_issue_date] => 1986-02-18
[patent_title] => 'Lateral bidirectional shielded notch FET'
[patent_app_type] => 1
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Array
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[patent_doc_number] => 04574208
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[patent_kind] => NA
[patent_issue_date] => 1986-03-04
[patent_title] => 'Raised split gate EFET and circuitry'
[patent_app_type] => 1
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