| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 1939246
[patent_doc_number] => 04343014
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-08-03
[patent_title] => 'Light-ignitable thyristor with anode-base duct portion extending on cathode surface between thyristor portions'
[patent_app_type] => 1
[patent_app_number] => 6/243146
[patent_app_country] => US
[patent_app_date] => 1981-03-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 2
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/343/04343014.pdf
[firstpage_image] =>[orig_patent_app_number] => 243146
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/243146 | Light-ignitable thyristor with anode-base duct portion extending on cathode surface between thyristor portions | Mar 11, 1981 | Issued |
| 06/242441 | PROCESS FOR AND STRUCTURE OF HIGH DENSITY VLSI CIRCUITS, HAVING SELF- ALIGNED GATES AND CONTACTS FOR FET DEVICES AND CONDUCTING LINES | Mar 10, 1981 | Abandoned |
Array
(
[id] => 1947567
[patent_doc_number] => 04366496
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-12-28
[patent_title] => 'Optically activatable semiconductor component'
[patent_app_type] => 1
[patent_app_number] => 6/242289
[patent_app_country] => US
[patent_app_date] => 1981-03-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 4
[patent_no_of_words] => 1032
[patent_no_of_claims] => 4
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[patent_words_short_claim] => 23
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/366/04366496.pdf
[firstpage_image] =>[orig_patent_app_number] => 242289
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/242289 | Optically activatable semiconductor component | Mar 9, 1981 | Issued |
Array
(
[id] => 1980799
[patent_doc_number] => 04352118
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-09-28
[patent_title] => 'Thyristor with segmented turn-on line for directing turn-on current'
[patent_app_type] => 1
[patent_app_number] => 6/240855
[patent_app_country] => US
[patent_app_date] => 1981-03-05
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 9
[patent_no_of_words] => 3963
[patent_no_of_claims] => 8
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 281
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/352/04352118.pdf
[firstpage_image] =>[orig_patent_app_number] => 240855
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/240855 | Thyristor with segmented turn-on line for directing turn-on current | Mar 4, 1981 | Issued |
| 06/238968 | INSULATED-GATE TYPE TRANSISTOR AND SEMICONDUCTOR INTEGRATED CIRCUIT USING SUCH TRANSISTOR | Feb 26, 1981 | Abandoned |
Array
(
[id] => 1996837
[patent_doc_number] => 04345266
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-08-17
[patent_title] => 'Transistor having improved turn-off time and second breakdown characteristics with bi-level emitter structure'
[patent_app_type] => 1
[patent_app_number] => 6/236220
[patent_app_country] => US
[patent_app_date] => 1981-02-19
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 9
[patent_no_of_words] => 3542
[patent_no_of_claims] => 1
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 189
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/345/04345266.pdf
[firstpage_image] =>[orig_patent_app_number] => 236220
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/236220 | Transistor having improved turn-off time and second breakdown characteristics with bi-level emitter structure | Feb 18, 1981 | Issued |
Array
(
[id] => 2100353
[patent_doc_number] => 04475117
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1984-10-02
[patent_title] => 'Linear pn junction capacitance diode'
[patent_app_type] => 1
[patent_app_number] => 6/234089
[patent_app_country] => US
[patent_app_date] => 1981-02-13
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
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[patent_no_of_words] => 1529
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/475/04475117.pdf
[firstpage_image] =>[orig_patent_app_number] => 234089
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/234089 | Linear pn junction capacitance diode | Feb 12, 1981 | Issued |
Array
(
[id] => 2059982
[patent_doc_number] => 04455565
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1984-06-19
[patent_title] => 'Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode'
[patent_app_type] => 1
[patent_app_number] => 6/234834
[patent_app_country] => US
[patent_app_date] => 1981-02-13
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[pdf_file] => patents/04/455/04455565.pdf
[firstpage_image] =>[orig_patent_app_number] => 234834
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/234834 | Vertical MOSFET with an aligned gate electrode and aligned drain shield electrode | Feb 12, 1981 | Issued |
Array
(
[id] => 2640386
[patent_doc_number] => 04916716
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1990-04-10
[patent_title] => 'Varactor diode'
[patent_app_type] => 1
[patent_app_number] => 6/233956
[patent_app_country] => US
[patent_app_date] => 1981-02-12
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 3
[patent_no_of_words] => 1610
[patent_no_of_claims] => 15
[patent_no_of_ind_claims] => 3
[patent_words_short_claim] => 169
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/916/04916716.pdf
[firstpage_image] =>[orig_patent_app_number] => 233956
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/233956 | Varactor diode | Feb 11, 1981 | Issued |
| 06/233848 | SEMICONDUCTOR DEVICE | Feb 11, 1981 | Abandoned |
Array
(
[id] => 2172073
[patent_doc_number] => 04541000
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1985-09-10
[patent_title] => 'Varactor or mixer diode with surrounding substrate metal contact and top surface isolation'
[patent_app_type] => 1
[patent_app_number] => 6/233185
[patent_app_country] => US
[patent_app_date] => 1981-02-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 7
[patent_no_of_words] => 2526
[patent_no_of_claims] => 15
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 116
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/541/04541000.pdf
[firstpage_image] =>[orig_patent_app_number] => 233185
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/233185 | Varactor or mixer diode with surrounding substrate metal contact and top surface isolation | Feb 9, 1981 | Issued |
| 06/230357 | PROTECTION CIRCUIT FOR INTEGRATED CIRCUIT DEVICES | Jan 29, 1981 | Abandoned |
Array
(
[id] => 2120799
[patent_doc_number] => 04489340
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1984-12-18
[patent_title] => 'PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions'
[patent_app_type] => 1
[patent_app_number] => 6/228935
[patent_app_country] => US
[patent_app_date] => 1981-01-28
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 9
[patent_no_of_words] => 4998
[patent_no_of_claims] => 1
[patent_no_of_ind_claims] => 1
[patent_words_short_claim] => 638
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/489/04489340.pdf
[firstpage_image] =>[orig_patent_app_number] => 228935
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/228935 | PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions | Jan 27, 1981 | Issued |
| 06/227837 | LOW RESISTANCE SCHOTTKY DIODE ON POLYSILICON/METAL-SILICIDE | Jan 22, 1981 | Abandoned |
Array
(
[id] => 1963576
[patent_doc_number] => 04316203
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-02-16
[patent_title] => 'Insulated gate field effect transistor'
[patent_app_type] => 1
[patent_app_number] => 6/224197
[patent_app_country] => US
[patent_app_date] => 1980-12-31
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 10
[patent_no_of_words] => 5627
[patent_no_of_claims] => 12
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/316/04316203.pdf
[firstpage_image] =>[orig_patent_app_number] => 224197
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/224197 | Insulated gate field effect transistor | Dec 30, 1980 | Issued |
| 06/221330 | SEMICONDUCTOR DEVICE | Dec 28, 1980 | Abandoned |
Array
(
[id] => 2021042
[patent_doc_number] => 04400716
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-08-23
[patent_title] => 'Semiconductor device with glass layer contacting outer periphery of guard ring and adjacent substrate'
[patent_app_type] => 1
[patent_app_number] => 6/220159
[patent_app_country] => US
[patent_app_date] => 1980-12-23
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 3
[patent_no_of_words] => 1397
[patent_no_of_claims] => 8
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[pdf_file] => patents/04/400/04400716.pdf
[firstpage_image] =>[orig_patent_app_number] => 220159
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/220159 | Semiconductor device with glass layer contacting outer periphery of guard ring and adjacent substrate | Dec 22, 1980 | Issued |
| 06/215224 | MEMORY IMPLANT PROFILE FOR IMPROVED CHANNEL SHIELDING IN ELECTRICALLY ALTERABLE READ ONLY MEMORY SEMICONDUCTOR DEVICE | Dec 10, 1980 | Abandoned |
Array
(
[id] => 1998158
[patent_doc_number] => 04380022
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-04-12
[patent_title] => 'Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect'
[patent_app_type] => 1
[patent_app_number] => 6/214601
[patent_app_country] => US
[patent_app_date] => 1980-12-09
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 4
[patent_no_of_words] => 2899
[patent_no_of_claims] => 4
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[pdf_file] => patents/04/380/04380022.pdf
[firstpage_image] =>[orig_patent_app_number] => 214601
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/214601 | Monolithic fully integrated class B push-pull microwave GaAs MESFET with differential inputs and outputs with reduced Miller effect | Dec 8, 1980 | Issued |
| 06/211929 | METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR | Nov 30, 1980 | Abandoned |