| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 2041076
[patent_doc_number] => 04414560
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-11-08
[patent_title] => 'Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region'
[patent_app_type] => 1
[patent_app_number] => 6/207126
[patent_app_country] => US
[patent_app_date] => 1980-11-17
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/04/414/04414560.pdf
[firstpage_image] =>[orig_patent_app_number] => 207126
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/207126 | Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region | Nov 16, 1980 | Issued |
Array
(
[id] => 2008501
[patent_doc_number] => 04412242
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-10-25
[patent_title] => 'Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions'
[patent_app_type] => 1
[patent_app_number] => 6/207123
[patent_app_country] => US
[patent_app_date] => 1980-11-17
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
[patent_figures_cnt] => 19
[patent_no_of_words] => 6224
[patent_no_of_claims] => 15
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[patent_words_short_claim] => 174
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/412/04412242.pdf
[firstpage_image] =>[orig_patent_app_number] => 207123
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/207123 | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions | Nov 16, 1980 | Issued |
Array
(
[id] => 2011379
[patent_doc_number] => 04399449
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-08-16
[patent_title] => 'Composite metal and polysilicon field plate structure for high voltage semiconductor devices'
[patent_app_type] => 1
[patent_app_number] => 6/207124
[patent_app_country] => US
[patent_app_date] => 1980-11-17
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 7
[patent_figures_cnt] => 19
[patent_no_of_words] => 6170
[patent_no_of_claims] => 16
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[pdf_file] => patents/04/399/04399449.pdf
[firstpage_image] =>[orig_patent_app_number] => 207124
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/207124 | Composite metal and polysilicon field plate structure for high voltage semiconductor devices | Nov 16, 1980 | Issued |
Array
(
[id] => 2247696
[patent_doc_number] => 04613766
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-09-23
[patent_title] => 'Thyristor having controllable emitter short circuits'
[patent_app_type] => 1
[patent_app_number] => 6/199633
[patent_app_country] => US
[patent_app_date] => 1980-10-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 3
[patent_no_of_words] => 2314
[patent_no_of_claims] => 6
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[pdf_file] => patents/04/613/04613766.pdf
[firstpage_image] =>[orig_patent_app_number] => 199633
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/199633 | Thyristor having controllable emitter short circuits | Oct 21, 1980 | Issued |
Array
(
[id] => 2270354
[patent_doc_number] => 04612449
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-09-16
[patent_title] => 'Thyristor having a secondary emitter electrode and a method for operating the same'
[patent_app_type] => 1
[patent_app_number] => 6/199520
[patent_app_country] => US
[patent_app_date] => 1980-10-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[pdf_file] => patents/04/612/04612449.pdf
[firstpage_image] =>[orig_patent_app_number] => 199520
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/199520 | Thyristor having a secondary emitter electrode and a method for operating the same | Oct 21, 1980 | Issued |
Array
(
[id] => 2280146
[patent_doc_number] => 04611128
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-09-09
[patent_title] => 'Triac having a multilayer semiconductor body'
[patent_app_type] => 1
[patent_app_number] => 6/199519
[patent_app_country] => US
[patent_app_date] => 1980-10-22
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 2
[patent_no_of_words] => 2507
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[pdf_file] => patents/04/611/04611128.pdf
[firstpage_image] =>[orig_patent_app_number] => 199519
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/199519 | Triac having a multilayer semiconductor body | Oct 21, 1980 | Issued |
| 06/199521 | LIGHT-FIRABLE THYRISTOR | Oct 21, 1980 | Abandoned |
Array
(
[id] => 1945739
[patent_doc_number] => 04314266
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-02-02
[patent_title] => 'Thyristor with voltage breakover current control separated from main emitter by current limit region'
[patent_app_type] => 1
[patent_app_number] => 6/196098
[patent_app_country] => US
[patent_app_date] => 1980-10-10
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 4
[patent_figures_cnt] => 15
[patent_no_of_words] => 6123
[patent_no_of_claims] => 25
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/314/04314266.pdf
[firstpage_image] =>[orig_patent_app_number] => 196098
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/196098 | Thyristor with voltage breakover current control separated from main emitter by current limit region | Oct 9, 1980 | Issued |
Array
(
[id] => 1953683
[patent_doc_number] => 04355322
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-10-19
[patent_title] => 'Integrated gate turn-off device having a vertical power transistor forming a regenerative loop with a lateral transistor'
[patent_app_type] => 1
[patent_app_number] => 6/184844
[patent_app_country] => US
[patent_app_date] => 1980-09-08
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
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[patent_no_of_words] => 941
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/04/355/04355322.pdf
[firstpage_image] =>[orig_patent_app_number] => 184844
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/184844 | Integrated gate turn-off device having a vertical power transistor forming a regenerative loop with a lateral transistor | Sep 7, 1980 | Issued |
Array
(
[id] => 2057411
[patent_doc_number] => 04394677
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-07-19
[patent_title] => 'Thyristor for low-loss triggering of short impulses with Schottky contact to control gate electrode'
[patent_app_type] => 1
[patent_app_number] => 6/182655
[patent_app_country] => US
[patent_app_date] => 1980-08-29
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 4
[patent_no_of_words] => 2429
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[pdf_file] => patents/04/394/04394677.pdf
[firstpage_image] =>[orig_patent_app_number] => 182655
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/182655 | Thyristor for low-loss triggering of short impulses with Schottky contact to control gate electrode | Aug 28, 1980 | Issued |
Array
(
[id] => 1980783
[patent_doc_number] => 04352115
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-09-28
[patent_title] => 'Transit time diode with an input structure formed by a matrix of micropoints'
[patent_app_type] => 1
[patent_app_number] => 6/180979
[patent_app_country] => US
[patent_app_date] => 1980-08-25
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
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[patent_no_of_words] => 1787
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[pdf_file] => patents/04/352/04352115.pdf
[firstpage_image] =>[orig_patent_app_number] => 180979
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/180979 | Transit time diode with an input structure formed by a matrix of micropoints | Aug 24, 1980 | Issued |
Array
(
[id] => 2269417
[patent_doc_number] => 04593302
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1986-06-03
[patent_title] => 'Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide'
[patent_app_type] => 1
[patent_app_number] => 6/178689
[patent_app_country] => US
[patent_app_date] => 1980-08-18
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 12
[patent_figures_cnt] => 31
[patent_no_of_words] => 7393
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[pdf_file] => patents/04/593/04593302.pdf
[firstpage_image] =>[orig_patent_app_number] => 178689
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/178689 | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide | Aug 17, 1980 | Issued |
Array
(
[id] => 1978397
[patent_doc_number] => 04361846
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-11-30
[patent_title] => 'Lateral type semiconductor devices with enlarged, large radii collector contact regions for high reverse voltage'
[patent_app_type] => 1
[patent_app_number] => 6/176207
[patent_app_country] => US
[patent_app_date] => 1980-08-07
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 3
[patent_figures_cnt] => 9
[patent_no_of_words] => 2143
[patent_no_of_claims] => 12
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[pdf_file] => patents/04/361/04361846.pdf
[firstpage_image] =>[orig_patent_app_number] => 176207
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/176207 | Lateral type semiconductor devices with enlarged, large radii collector contact regions for high reverse voltage | Aug 6, 1980 | Issued |
| 06/175865 | THYRISTOR | Aug 5, 1980 | Abandoned |
Array
(
[id] => 1941433
[patent_doc_number] => 04327367
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1982-04-27
[patent_title] => 'Thyristor with even turn-on line potential and method with 1-micron to 5-mil wide alignment region band'
[patent_app_type] => 1
[patent_app_number] => 6/172449
[patent_app_country] => US
[patent_app_date] => 1980-07-25
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 6
[patent_figures_cnt] => 23
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[pdf_file] => patents/04/327/04327367.pdf
[firstpage_image] =>[orig_patent_app_number] => 172449
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/172449 | Thyristor with even turn-on line potential and method with 1-micron to 5-mil wide alignment region band | Jul 24, 1980 | Issued |
| 06/171275 | SEMICONDUCTOR DEVICE | Jul 22, 1980 | Abandoned |
| 06/169853 | PLANAR GATE TURN-OFF FIELD CONTROLLED THYRISTORS AND PLANAR JUNCTION GATE FIELD EFFECT TRANSISTORS, AND METHOD OF MAKING SAME | Jul 16, 1980 | Abandoned |
Array
(
[id] => 2023854
[patent_doc_number] => 04370669
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1983-01-25
[patent_title] => 'Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit'
[patent_app_type] => 1
[patent_app_number] => 6/169527
[patent_app_country] => US
[patent_app_date] => 1980-07-16
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 1
[patent_figures_cnt] => 5
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[pdf_file] => patents/04/370/04370669.pdf
[firstpage_image] =>[orig_patent_app_number] => 169527
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/169527 | Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit | Jul 15, 1980 | Issued |
Array
(
[id] => 1878771
[patent_doc_number] => 04305084
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1981-12-08
[patent_title] => 'Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means'
[patent_app_type] => 1
[patent_app_number] => 6/168606
[patent_app_country] => US
[patent_app_date] => 1980-07-14
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 2
[patent_figures_cnt] => 3
[patent_no_of_words] => 4940
[patent_no_of_claims] => 13
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[pdf_file] => patents/04/305/04305084.pdf
[firstpage_image] =>[orig_patent_app_number] => 168606
[rel_patent_id] =>[rel_patent_doc_number] =>) 06/168606 | Semiconductor switching device capable of turn-on only at low applied voltages using self pinch-off means | Jul 13, 1980 | Issued |
| 06/167343 | INSULATED GATE STATIC INDUCTION TRANSISTOR AND INTEGRATED CIRCUIT INCLUDING SAME | Jul 9, 1980 | Abandoned |