John D Freeman
Examiner (ID: 17393, Phone: (571)270-3469 , Office: P/1787 )
Most Active Art Unit | 1787 |
Art Unit(s) | 4174, 1794, 1787 |
Total Applications | 752 |
Issued Applications | 292 |
Pending Applications | 67 |
Abandoned Applications | 393 |
Applications
Application number | Title of the application | Filing Date | Status |
---|---|---|---|
Array
(
[id] => 1458872
[patent_doc_number] => 06426287
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2002-07-30
[patent_title] => 'Method for forming a semiconductor connection with a top surface having an enlarged recess'
[patent_app_type] => B2
[patent_app_number] => 09/903338
[patent_app_country] => US
[patent_app_date] => 2001-07-11
[patent_effective_date] => 0000-00-00
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[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/426/06426287.pdf
[firstpage_image] =>[orig_patent_app_number] => 09903338
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/903338 | Method for forming a semiconductor connection with a top surface having an enlarged recess | Jul 10, 2001 | Issued |
Array
(
[id] => 6884927
[patent_doc_number] => 20010039089
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2001-11-08
[patent_title] => 'Memory array having a digit line buried in an isolation region and method for forming same'
[patent_app_type] => new
[patent_app_number] => 09/900341
[patent_app_country] => US
[patent_app_date] => 2001-07-05
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[pdf_file] => publications/A1/0039/20010039089.pdf
[firstpage_image] =>[orig_patent_app_number] => 09900341
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/900341 | Method for forming memory array having a digit line buried in an isolation region | Jul 4, 2001 | Issued |
Array
(
[id] => 6503509
[patent_doc_number] => 20020025670
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-02-28
[patent_title] => 'Method of manufacturing a semiconductor device'
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[patent_app_number] => 09/897472
[patent_app_country] => US
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[pdf_file] => publications/A1/0025/20020025670.pdf
[firstpage_image] =>[orig_patent_app_number] => 09897472
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/897472 | Method of manufacturing a semiconductor device | Jul 2, 2001 | Issued |
Array
(
[id] => 1399454
[patent_doc_number] => 06537913
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2003-03-25
[patent_title] => 'Method of making a semiconductor device with aluminum capped copper interconnect pads'
[patent_app_type] => B2
[patent_app_number] => 09/895522
[patent_app_country] => US
[patent_app_date] => 2001-06-29
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[pdf_file] => patents/06/537/06537913.pdf
[firstpage_image] =>[orig_patent_app_number] => 09895522
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/895522 | Method of making a semiconductor device with aluminum capped copper interconnect pads | Jun 28, 2001 | Issued |
Array
(
[id] => 1440095
[patent_doc_number] => 06495447
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-12-17
[patent_title] => 'Use of hydrogen doping for protection of low-k dielectric layers'
[patent_app_type] => B1
[patent_app_number] => 09/888431
[patent_app_country] => US
[patent_app_date] => 2001-06-26
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[pdf_file] => patents/06/495/06495447.pdf
[firstpage_image] =>[orig_patent_app_number] => 09888431
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/888431 | Use of hydrogen doping for protection of low-k dielectric layers | Jun 25, 2001 | Issued |
Array
(
[id] => 1534625
[patent_doc_number] => 06489230
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-12-03
[patent_title] => 'Integration of low-k SiOF as inter-layer dielectric'
[patent_app_type] => B1
[patent_app_number] => 09/886032
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[patent_app_date] => 2001-06-22
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[pdf_file] => patents/06/489/06489230.pdf
[firstpage_image] =>[orig_patent_app_number] => 09886032
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/886032 | Integration of low-k SiOF as inter-layer dielectric | Jun 21, 2001 | Issued |
Array
(
[id] => 5888718
[patent_doc_number] => 20020013046
[patent_country] => US
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[patent_issue_date] => 2002-01-31
[patent_title] => 'Semiconductor device and method of manufacturing the same'
[patent_app_type] => new
[patent_app_number] => 09/884074
[patent_app_country] => US
[patent_app_date] => 2001-06-20
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[pdf_file] => publications/A1/0013/20020013046.pdf
[firstpage_image] =>[orig_patent_app_number] => 09884074
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/884074 | Method of manufacturing a semiconductor device | Jun 19, 2001 | Issued |
Array
(
[id] => 1595694
[patent_doc_number] => 06492258
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-12-10
[patent_title] => 'METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-M AND SMALLER SEMICONDUCTOR CHIP TECHNOLOGY BY ANNEALING INTERCONNECT LINES AND USING LOW BIAS VOLTAGE AND LOW INTERLAYER DIELECTRIC DEPOSITION RATE AND SEMICONDUCTOR CHIP MADE THEREBY'
[patent_app_type] => B1
[patent_app_number] => 09/881831
[patent_app_country] => US
[patent_app_date] => 2001-06-14
[patent_effective_date] => 0000-00-00
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[pdf_file] => patents/06/492/06492258.pdf
[firstpage_image] =>[orig_patent_app_number] => 09881831
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/881831 | METHOD FOR REDUCING STRESS-INDUCED VOIDS FOR 0.25-M AND SMALLER SEMICONDUCTOR CHIP TECHNOLOGY BY ANNEALING INTERCONNECT LINES AND USING LOW BIAS VOLTAGE AND LOW INTERLAYER DIELECTRIC DEPOSITION RATE AND SEMICONDUCTOR CHIP MADE THEREBY | Jun 13, 2001 | Issued |
Array
(
[id] => 6260780
[patent_doc_number] => 20020187653
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-12-12
[patent_title] => 'Method of forming a spin-on-passivation layer'
[patent_app_type] => new
[patent_app_number] => 09/878361
[patent_app_country] => US
[patent_app_date] => 2001-06-12
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[pdf_file] => publications/A1/0187/20020187653.pdf
[firstpage_image] =>[orig_patent_app_number] => 09878361
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/878361 | Method of forming a spin-on-passivation layer | Jun 11, 2001 | Issued |
Array
(
[id] => 7643989
[patent_doc_number] => 06429049
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-08-06
[patent_title] => 'Laser method for forming vias'
[patent_app_type] => B1
[patent_app_number] => 09/874154
[patent_app_country] => US
[patent_app_date] => 2001-06-05
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[firstpage_image] =>[orig_patent_app_number] => 09874154
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/874154 | Laser method for forming vias | Jun 4, 2001 | Issued |
Array
(
[id] => 1376314
[patent_doc_number] => 06559048
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2003-05-06
[patent_title] => 'Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning'
[patent_app_type] => B1
[patent_app_number] => 09/870851
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/870851 | Method of making a sloped sidewall via for integrated circuit structure to suppress via poisoning | May 29, 2001 | Issued |
Array
(
[id] => 1550494
[patent_doc_number] => 06399493
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2002-06-04
[patent_title] => 'Method of silicide formation by silicon pretreatment'
[patent_app_type] => B1
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[firstpage_image] =>[orig_patent_app_number] => 09860141
[rel_patent_id] =>[rel_patent_doc_number] =>) 09/860141 | Method of silicide formation by silicon pretreatment | May 16, 2001 | Issued |
Array
(
[id] => 1485354
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[patent_kind] => B1
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[patent_title] => 'Dual-damascene process with porous low-K dielectric material'
[patent_app_type] => B1
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/859762 | Dual-damascene process with porous low-K dielectric material | May 16, 2001 | Issued |
Array
(
[id] => 1500363
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[patent_issue_date] => 2002-11-26
[patent_title] => 'Apparatus and method for forming deposited film'
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Array
(
[id] => 1602643
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[patent_issue_date] => 2002-08-13
[patent_title] => 'Method of improving electromigration resistance of capped Cu'
[patent_app_type] => B1
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/846611 | Method of improving electromigration resistance of capped Cu | May 1, 2001 | Issued |
Array
(
[id] => 7631361
[patent_doc_number] => 06635571
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2003-10-21
[patent_title] => 'Process for forming aluminum or aluminum oxide thin film on substrates'
[patent_app_type] => B2
[patent_app_number] => 09/841072
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/841072 | Process for forming aluminum or aluminum oxide thin film on substrates | Apr 24, 2001 | Issued |
Array
(
[id] => 1462637
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[patent_issue_date] => 2002-02-26
[patent_title] => 'Method to remove copper contamination by using downstream oxygen and chelating agent plasma'
[patent_app_type] => B1
[patent_app_number] => 09/839962
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Array
(
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[patent_title] => 'Method of making ultra small vias for integrated circuits'
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Array
(
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[patent_issue_date] => 2002-11-28
[patent_title] => 'Method for utilizing tungsten barrier in contacts to silicide and structure produced therby'
[patent_app_type] => new
[patent_app_number] => 09/820591
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/820591 | Method for utilizing tungsten barrier in contacts to silicide and structure produced therby | Mar 28, 2001 | Abandoned |
Array
(
[id] => 6540055
[patent_doc_number] => 20020137331
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2002-09-26
[patent_title] => 'Method of forming contact holes of reduced dimensions by using reverse-transcription process'
[patent_app_type] => new
[patent_app_number] => 09/813051
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 09/813051 | Method of forming contact holes of reduced dimensions by using reverse-transcription process | Mar 19, 2001 | Abandoned |