Array
(
[id] => 5848605
[patent_doc_number] => 20060231872
[patent_country] => US
[patent_kind] => A1
[patent_issue_date] => 2006-10-19
[patent_title] => 'Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same'
[patent_app_type] => utility
[patent_app_number] => 10/557552
[patent_app_country] => US
[patent_app_date] => 2003-12-30
[patent_effective_date] => 0000-00-00
[patent_drawing_sheets_cnt] => 5
[patent_figures_cnt] => 5
[patent_no_of_words] => 3180
[patent_no_of_claims] => 12
[patent_no_of_ind_claims] => 2
[patent_words_short_claim] => 0
[patent_maintenance] => 1
[patent_no_of_assignments] => 0
[patent_current_assignee] =>[type] => publication
[pdf_file] => publications/A1/0231/20060231872.pdf
[firstpage_image] =>[orig_patent_app_number] => 10557552
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/557552 | Field effect transistor using insulator-semiconductor transition material layer as channel material and method of manufacturing the same | Dec 29, 2003 | Abandoned |