
Kenneth J. Hansen
Examiner (ID: 561, Phone: (571)272-6780 , Office: P/3746 )
| Most Active Art Unit | 3746 |
| Art Unit(s) | 3722, 3209, 3206, 3746 |
| Total Applications | 920 |
| Issued Applications | 709 |
| Pending Applications | 73 |
| Abandoned Applications | 159 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
| 09/004448 | AN ULTRA-SHORT CHANNEL RECESSED GATE MOSFET WITH A BURIED CONTACT | Jan 7, 1998 | Issued |
Array
(
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[patent_doc_number] => 06066559
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[patent_kind] => NA
[patent_issue_date] => 2000-05-23
[patent_title] => 'Method for forming a semiconductor connection with a top surface having an enlarged recess'
[patent_app_type] => 1
[patent_app_number] => 8/985088
[patent_app_country] => US
[patent_app_date] => 1997-12-04
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Array
(
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Array
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[patent_title] => 'Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process'
[patent_app_type] => 1
[patent_app_number] => 8/980782
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/980782 | Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process | Nov 30, 1997 | Issued |
Array
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[patent_kind] => NA
[patent_issue_date] => 1999-08-17
[patent_title] => 'Method of making a semiconductor device having high performance gate electrode structure'
[patent_app_type] => 1
[patent_app_number] => 8/982198
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Array
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[patent_title] => 'Method of forming wirings'
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Array
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[patent_title] => 'Method and apparatus for reducing fixed charge in semiconductor device layers'
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Array
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Array
(
[id] => 4178206
[patent_doc_number] => 06037252
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[patent_issue_date] => 2000-03-14
[patent_title] => 'Method of titanium nitride contact plug formation'
[patent_app_type] => 1
[patent_app_number] => 8/964532
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Array
(
[id] => 4080140
[patent_doc_number] => 05965911
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[patent_title] => 'Mos transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/960290 | Mos transistor adopting titanium-carbon-nitride gate electrode and manufacturing method thereof | Oct 28, 1997 | Issued |
Array
(
[id] => 4178234
[patent_doc_number] => 06037254
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[patent_title] => 'Method of making a surface protective layer for improved silicide formation'
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[patent_app_number] => 8/957808
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Array
(
[id] => 3797269
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Array
(
[id] => 3990826
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Array
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[id] => 4095071
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/954461 | Method of patterning a submicron semiconductor layer | Oct 19, 1997 | Issued |
Array
(
[id] => 4094946
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[patent_title] => 'Method for improved gate oxide integrity on bulk silicon'
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Array
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[id] => 4023685
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Array
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Array
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Array
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Array
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