| Application number | Title of the application | Filing Date | Status |
|---|
Array
(
[id] => 3836990
[patent_doc_number] => 05846888
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-12-08
[patent_title] => 'Method for in-situ incorporation of desirable impurities into high pressure oxides'
[patent_app_type] => 1
[patent_app_number] => 8/721838
[patent_app_country] => US
[patent_app_date] => 1996-09-27
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[pdf_file] => patents/05/846/05846888.pdf
[firstpage_image] =>[orig_patent_app_number] => 721838
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/721838 | Method for in-situ incorporation of desirable impurities into high pressure oxides | Sep 26, 1996 | Issued |
| 08/721080 | DEPOSITION OF DEVICE QUALITY, LOW HYDROGEN CONTENT, HYDROGENATED AMORPHOUS SILICON AT HIGH DEPOSITION RATES WITH INCREASED STABILITY USING THE HOT WIRE FILAMENT TECHNIQUE | Sep 25, 1996 | Abandoned |
Array
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[patent_doc_number] => 06071797
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[patent_kind] => NA
[patent_issue_date] => 2000-06-06
[patent_title] => 'Method for forming amorphous carbon thin film by plasma chemical vapor deposition'
[patent_app_type] => 1
[patent_app_number] => 8/719958
[patent_app_country] => US
[patent_app_date] => 1996-09-24
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[firstpage_image] =>[orig_patent_app_number] => 719958
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/719958 | Method for forming amorphous carbon thin film by plasma chemical vapor deposition | Sep 23, 1996 | Issued |
Array
(
[id] => 3875427
[patent_doc_number] => 05747382
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-05-05
[patent_title] => 'Two-step planarization process using chemical-mechanical polishing and reactive-ion-etching'
[patent_app_type] => 1
[patent_app_number] => 8/719232
[patent_app_country] => US
[patent_app_date] => 1996-09-24
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[firstpage_image] =>[orig_patent_app_number] => 719232
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/719232 | Two-step planarization process using chemical-mechanical polishing and reactive-ion-etching | Sep 23, 1996 | Issued |
Array
(
[id] => 3694996
[patent_doc_number] => 05661093
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-08-26
[patent_title] => 'Method for the stabilization of halogen-doped films through the use of multiple sealing layers'
[patent_app_type] => 1
[patent_app_number] => 8/716490
[patent_app_country] => US
[patent_app_date] => 1996-09-12
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[firstpage_image] =>[orig_patent_app_number] => 716490
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/716490 | Method for the stabilization of halogen-doped films through the use of multiple sealing layers | Sep 11, 1996 | Issued |
Array
(
[id] => 3950844
[patent_doc_number] => 05899746
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1999-05-04
[patent_title] => 'Method of forming pattern'
[patent_app_type] => 1
[patent_app_number] => 8/697732
[patent_app_country] => US
[patent_app_date] => 1996-08-29
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[firstpage_image] =>[orig_patent_app_number] => 697732
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/697732 | Method of forming pattern | Aug 28, 1996 | Issued |
Array
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[id] => 3774345
[patent_doc_number] => 05817581
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-10-06
[patent_title] => 'Process for the creation of a thermal SiO.sub.2 layer with extremely uniform layer thickness'
[patent_app_type] => 1
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[firstpage_image] =>[orig_patent_app_number] => 702608
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Array
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[id] => 3769193
[patent_doc_number] => 05849644
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-12-15
[patent_title] => 'Semiconductor processing methods of chemical vapor depositing SiO.sub.2 on a substrate'
[patent_app_type] => 1
[patent_app_number] => 8/696243
[patent_app_country] => US
[patent_app_date] => 1996-08-13
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[pdf_file] => patents/05/849/05849644.pdf
[firstpage_image] =>[orig_patent_app_number] => 696243
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/696243 | Semiconductor processing methods of chemical vapor depositing SiO.sub.2 on a substrate | Aug 12, 1996 | Issued |
Array
(
[id] => 3771833
[patent_doc_number] => 05807785
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-09-15
[patent_title] => 'Low dielectric constant silicon dioxide sandwich layer'
[patent_app_type] => 1
[patent_app_number] => 8/691990
[patent_app_country] => US
[patent_app_date] => 1996-08-02
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[pdf_file] => patents/05/807/05807785.pdf
[firstpage_image] =>[orig_patent_app_number] => 691990
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/691990 | Low dielectric constant silicon dioxide sandwich layer | Aug 1, 1996 | Issued |
Array
(
[id] => 1336616
[patent_doc_number] => 06593245
[patent_country] => US
[patent_kind] => B1
[patent_issue_date] => 2003-07-15
[patent_title] => 'Silicon nitride etch process with critical dimension gain'
[patent_app_type] => B1
[patent_app_number] => 08/690848
[patent_app_country] => US
[patent_app_date] => 1996-08-01
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[firstpage_image] =>[orig_patent_app_number] => 08690848
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/690848 | Silicon nitride etch process with critical dimension gain | Jul 31, 1996 | Issued |
Array
(
[id] => 3660794
[patent_doc_number] => 05656556
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-08-12
[patent_title] => 'Method for fabricating planarized borophosphosilicate glass films having low anneal temperatures'
[patent_app_type] => 1
[patent_app_number] => 8/684663
[patent_app_country] => US
[patent_app_date] => 1996-07-22
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 684663
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/684663 | Method for fabricating planarized borophosphosilicate glass films having low anneal temperatures | Jul 21, 1996 | Issued |
| 08/677218 | IN-SITU CONSTRUCTION OF AN OXIDIZED FILM ON A SEMICONDUCTOR WAFFER | Jul 8, 1996 | Abandoned |
| 08/673279 | SOLID POROUS INSULATED CONDUCTIVE LINES | Jun 27, 1996 | Abandoned |
Array
(
[id] => 3682013
[patent_doc_number] => 05633202
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-05-27
[patent_title] => 'High tensile nitride layer'
[patent_app_type] => 1
[patent_app_number] => 8/660734
[patent_app_country] => US
[patent_app_date] => 1996-06-06
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[firstpage_image] =>[orig_patent_app_number] => 660734
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/660734 | High tensile nitride layer | Jun 5, 1996 | Issued |
Array
(
[id] => 3832444
[patent_doc_number] => 05814555
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-09-29
[patent_title] => 'Interlevel dielectric with air gaps to lessen capacitive coupling'
[patent_app_type] => 1
[patent_app_number] => 8/658456
[patent_app_country] => US
[patent_app_date] => 1996-06-05
[patent_effective_date] => 0000-00-00
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[rel_patent_id] =>[rel_patent_doc_number] =>) 08/658456 | Interlevel dielectric with air gaps to lessen capacitive coupling | Jun 4, 1996 | Issued |
| 08/655409 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | May 29, 1996 | Abandoned |
Array
(
[id] => 3812632
[patent_doc_number] => 05710079
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1998-01-20
[patent_title] => 'Method and apparatus for forming dielectric films'
[patent_app_type] => 1
[patent_app_number] => 8/653264
[patent_app_country] => US
[patent_app_date] => 1996-05-24
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[firstpage_image] =>[orig_patent_app_number] => 653264
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/653264 | Method and apparatus for forming dielectric films | May 23, 1996 | Issued |
Array
(
[id] => 3722753
[patent_doc_number] => 05672525
[patent_country] => US
[patent_kind] => NA
[patent_issue_date] => 1997-09-30
[patent_title] => 'Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity'
[patent_app_type] => 1
[patent_app_number] => 8/652882
[patent_app_country] => US
[patent_app_date] => 1996-05-23
[patent_effective_date] => 0000-00-00
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[firstpage_image] =>[orig_patent_app_number] => 652882
[rel_patent_id] =>[rel_patent_doc_number] =>) 08/652882 | Polysilicon gate reoxidation in a gas mixture of oxygen and nitrogen trifluoride gas by rapid thermal processing to improve hot carrier immunity | May 22, 1996 | Issued |
| 08/646719 | SEMICONDUCTOR PROCESSING METHOD OF REDUCING THICKNESS DEPLETION OF A NITRIDE LAYER AT A JUNCTION OF DIFFERENT UNDERLYING LAYERS | May 8, 1996 | Abandoned |
| 08/583130 | METHOD FOR MANUFACTURING SEMICONDUCTOR | Apr 23, 1996 | Abandoned |