
Kevin C. Sirmons
Supervisory Patent Examiner (ID: 8197, Phone: (571)272-4965 , Office: P/3763 )
| Most Active Art Unit | 3783 |
| Art Unit(s) | 3767, 3783, 3763, 3734 |
| Total Applications | 592 |
| Issued Applications | 289 |
| Pending Applications | 113 |
| Abandoned Applications | 194 |
Applications
| Application number | Title of the application | Filing Date | Status |
|---|---|---|---|
Array
(
[id] => 1052754
[patent_doc_number] => 06858081
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-02-22
[patent_title] => 'Selective growth method, and semiconductor light emitting device and fabrication method thereof'
[patent_app_type] => utility
[patent_app_number] => 10/345684
[patent_app_country] => US
[patent_app_date] => 2003-01-16
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[patent_current_assignee] =>[type] => patent
[pdf_file] => patents/06/858/06858081.pdf
[firstpage_image] =>[orig_patent_app_number] => 10345684
[rel_patent_id] =>[rel_patent_doc_number] =>) 10/345684 | Selective growth method, and semiconductor light emitting device and fabrication method thereof | Jan 15, 2003 | Issued |
Array
(
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[patent_doc_number] => 06803071
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[patent_kind] => B1
[patent_issue_date] => 2004-10-12
[patent_title] => 'Paraelectric thin film semiconductor material and method for producing the same'
[patent_app_type] => B1
[patent_app_number] => 10/339622
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[patent_app_date] => 2003-01-10
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/339622 | Paraelectric thin film semiconductor material and method for producing the same | Jan 9, 2003 | Issued |
Array
(
[id] => 1023825
[patent_doc_number] => 06884290
[patent_country] => US
[patent_kind] => B2
[patent_issue_date] => 2005-04-26
[patent_title] => 'Electrically conductive polycrystalline diamond and particulate metal based electrodes'
[patent_app_type] => utility
[patent_app_number] => 10/338318
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[patent_app_date] => 2003-01-08
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/338318 | Electrically conductive polycrystalline diamond and particulate metal based electrodes | Jan 7, 2003 | Issued |
Array
(
[id] => 933815
[patent_doc_number] => 06977010
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[patent_issue_date] => 2005-12-20
[patent_title] => 'Apparatus for pulling single crystal by CZ method'
[patent_app_type] => utility
[patent_app_number] => 10/337456
[patent_app_country] => US
[patent_app_date] => 2003-01-07
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/337456 | Apparatus for pulling single crystal by CZ method | Jan 6, 2003 | Issued |
Array
(
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[patent_doc_number] => 06869481
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[patent_issue_date] => 2005-03-22
[patent_title] => 'Method and device for regulating the differential pressure in epitaxy reactors'
[patent_app_type] => utility
[patent_app_number] => 10/330816
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[patent_app_date] => 2002-12-27
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/330816 | Method and device for regulating the differential pressure in epitaxy reactors | Dec 26, 2002 | Issued |
Array
(
[id] => 474040
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[patent_issue_date] => 2007-06-05
[patent_title] => 'Method for vanishing defects in single crystal silicon and single crystal silicon'
[patent_app_type] => utility
[patent_app_number] => 10/500268
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/500268 | Method for vanishing defects in single crystal silicon and single crystal silicon | Dec 24, 2002 | Issued |
Array
(
[id] => 1027274
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[patent_title] => 'Methods for forming high purity components and components formed thereby'
[patent_app_type] => utility
[patent_app_number] => 10/328251
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/328251 | Methods for forming high purity components and components formed thereby | Dec 22, 2002 | Issued |
Array
(
[id] => 687451
[patent_doc_number] => RE039173
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[patent_kind] => E1
[patent_issue_date] => 2006-07-11
[patent_title] => 'Silicon single crystal wafer'
[patent_app_type] => reissue
[patent_app_number] => 10/323758
[patent_app_country] => US
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/323758 | Silicon single crystal wafer | Dec 19, 2002 | Issued |
Array
(
[id] => 6708254
[patent_doc_number] => 20030168003
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[patent_issue_date] => 2003-09-11
[patent_title] => 'Method and apparatus for producing large, single-crystals of aluminum nitride'
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/324998 | Method and apparatus for producing large, single-crystals of aluminum nitride | Dec 19, 2002 | Issued |
Array
(
[id] => 1014161
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[patent_title] => 'Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor device'
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[patent_app_number] => 10/320407
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[rel_patent_id] =>[rel_patent_doc_number] =>) 10/320407 | Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor device | Dec 16, 2002 | Issued |
Array
(
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Array
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[id] => 471192
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Array
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Array
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Array
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Array
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Array
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